Patent classifications
H01F2017/0086
Chip inductor and manufacturing method thereof
A chip inductor includes a substrate having a main surface, an insulating layer covering the main surface of the substrate, an external terminal formed on the insulating layer, and a coil conductor of a spiral-shape routed to a region outside the external terminal and a region facing the external terminal at the main surface of the substrate.
MULTI-TERMINAL INDUCTORS FOR VOLTAGE REGULATORS
Some embodiments include apparatuses having a switching circuit included in a buck converter; an output node; an inductor including a first portion having a first terminal coupled to the switching circuit, a second portion having a second terminal coupled to the output node, and a third terminal between the first and second portions; and a capacitor coupled to the second terminal, the second terminal to couple to a first additional capacitor, and the third terminal to couple to a second additional capacitor.
INDUCTOR STRUCTURE FOR INTEGRATED CIRCUIT
The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a first plurality of conductive interconnect layers arranged within a first inter-level dielectric (ILD) structure disposed on a first surface of a first substrate. A second plurality of conductive interconnect layers are arranged within a second ILD structure disposed on a first surface of a second substrate. The second substrate is separated from the first substrate by the first ILD structure. The first plurality of conductive interconnect layers and the second plurality of conductive interconnect layers define an inductor having one or more turns.
INDUCTOR STRUCTURE FOR INTEGRATED CIRCUIT
The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method may be performed by forming a first conductive wire within a first dielectric structure formed on a first surface of a first substrate. A through-substrate-via (TSV) is formed to extend though the first substrate. A second conductive wire is formed within a second dielectric structure formed on a second surface of the first substrate opposing the first surface. The TSV electrically couples the first conductive wire and the second conductive wire. The first conductive wire, the second conductive wire, and the TSV define an inductor that wraps around an axis.
PACKAGE SUBSTRATE INDUCTOR HAVING THERMAL INTERCONNECT STRUCTURES
Embodiments include a microelectronic device package structure having an inductor within a portion of a substrate, wherein a surface of the inductor is substantially coplanar with a surface of the substrate. One or more thermal interconnect structures are on the surface of the inductor. A conductive feature is embedded within a board, where a surface of the conductive feature is substantially coplanar with a surface of the board. One or more thermal interconnect structures are on the surface of the conductive feature of the board, where the thermal interconnect structures provide a thermal pathway for cooling for the inductor.
Hexagonal semiconductor package structure
Coil structures and methods of forming are provided. The coil structure includes a substrate. A plurality of coils is disposed over the substrate, each coil comprising a conductive element that forms a continuous spiral having a hexagonal shape in a plan view of the coil structure. The plurality of coils is arranged in a honeycomb pattern, and each conductive element is electrically connected to an external electrical circuit.
EMBEDDED MAGNETIC INDUCTOR
An apparatus and method of forming a magnetic inductor circuit. A substrate is provided and a first magnetic layer is formed in contact with one layer of the substrate. A conductive trace is formed in contact with the first magnetic layer. A sacrificial cooper layer protects the magnetic material from wet chemistry process steps. A conductive connection is formed from the conductive trace to the outside substrate, the conductive connection comprising a horizontal connection formed by in-layer plating A second magnetic layer is formed in contact with the conductive trace. Instead of a horizontal connection, a vertical conductive connection can be formed that is perpendicular to the magnetic layers, by drilling a first via in a second of the magnetic layers, forming a buildup layer, and drilling a second via through the buildup layer, where the buildup layer protects the magnetic layers from wet chemistry processes.
STACKED SPIRAL INDUCTOR
A stacked spiral inductor, comprising: a substrate, and multiple stacked insulating layers and inductive metal layers formed on the substrate by means of a semiconductor process. Each inductive metal layer comprises a conductive coil in a shape of a spiral and a through hole area used for connecting two adjacent inductive metal layers. The conductive coils of the inductive metal layers have a common coil center. In two adjacent inductive metal layers, the conductive coil of the lower inductive metal layer is retracted toward the coil center with respect to the conductive coil of the upper inductive metal layer.
STACKED MAGNETIC COMPOUND MOLDED INTEGRATED ISOLATION TRANSFORMER
An electronic device with an integrated transformer including a first substrate having a first patterned conductive feature with multiple turns that form a first winding, and a first molded magnetic material that encloses a portion of the first patterned conductive feature, and an adhesive layer on a side of the first substrate. The transformer also includes a second substrate having a second patterned conductive feature with multiple turns that form a second winding, and a second molded magnetic material that encloses a portion of the second patterned conductive feature, the second substrate extending on the adhesive layer to magnetically couple the first and second windings. The electronic device includes a package structure that encloses the first and second substrates.
INDUCTIVE DEVICE STRUCTURE AND PROCESS METHOD
A device is described. The device includes a substrate having a first cavity. The device also includes a first redistribution layer (RDL) on sidewalls and a base of the first cavity in the substrate and on a first surface of the substrate. The device further includes a fill material in the first cavity.