Patent classifications
H01F41/04
Semiconductor device structure having protection caps on conductive lines
A semiconductor device structure is provided. The semiconductor device structure includes a first conductive line over a substrate. The semiconductor device structure includes a first protection cap over the first conductive line. The semiconductor device structure includes a first photosensitive dielectric layer over the substrate, the first conductive line, and the first protection cap. The semiconductor device structure includes a conductive via structure passing through the first photosensitive dielectric layer and connected to the first protection cap. The semiconductor device structure includes a second conductive line over the conductive via structure and the first photosensitive dielectric layer. The semiconductor device structure includes a second protection cap over the second conductive line. The semiconductor device structure includes a second photosensitive dielectric layer over the first photosensitive dielectric layer, the second conductive line, and the second protection cap.
Multi-Layer-Multi-Turn Structure for High Efficiency Wireless Communication
A structure for wireless communication having a plurality of conductor layers, an insulator layer separating each of the conductor layers, and at least one connector connecting two of the conductor layers wherein an electrical resistance is reduced when an electrical signal is induced in the resonator at a predetermined frequency. The structure is capable of transmitting or receiving electrical energy and/or data at various near and far field magnetic coupling frequencies.
Multi-Layer-Multi-Turn Structure for High Efficiency Wireless Communication
A structure for wireless communication having a plurality of conductor layers, an insulator layer separating each of the conductor layers, and at least one connector connecting two of the conductor layers wherein an electrical resistance is reduced when an electrical signal is induced in the resonator at a predetermined frequency. The structure is capable of transmitting or receiving electrical energy and/or data at various near and far field magnetic coupling frequencies.
Integrated circuit structure with dielectric material to cover horizontally separated metal layers, and related method
Embodiments of the disclosure provide an integrated circuit (IC) structure. The IC structure may include a first metal layer on a substrate, and a second metal layer on the substrate that is horizontally separated from the first metal layer. A dielectric material may include a first portion on the first metal layer, and having a first upper surface, a second portion on the second metal layer, and having a second upper surface, and a third portion on the substrate between the first metal layer and the second metal layer. The third portion of the dielectric material includes a third upper surface above the first upper surface of the first portion and the second upper surface of the second portion of the dielectric material.
Coil component
A coil component includes a body; a supporting substrate embedded in the body; a coil portion including a coil pattern, and a lead-out pattern exposed to an outside of the body through an external surface of the body, and disposed on the supporting substrate and embedded in the body; and an insulating film disposed between the coil portion and the body, wherein at least a portion of the lead-out pattern contacts the body through an opening formed in the insulating film.
Radio frequency weak magnetic field detection sensor and method of manufacturing the same
A radio frequency (RF) weak magnetic field detection sensor includes a ferromagnetic core, a pickup coil disposed to surround the ferromagnetic core, a substrate that includes an opening, a core pad connected to the ferromagnetic core and a coil pad connected to the pickup coil, and an insulating tube interposed between the ferromagnetic core and the pickup coil. The insulating tube includes a bobbin around which the pickup coil is wound, and a core hole formed to pass through the bobbin and configured to accommodate the ferromagnetic core.
COIL COMPONENT
A coil component includes a body including a first surface and a second surface disposed to oppose each other in a first direction, a first coil unit disposed in the body, and including a support member and a coil pattern disposed on at least one surface of the support member, a second coil unit disposed in the body, and including a wire-wound type coil; and a plurality of external electrodes connected to the first and second coil units, wherein a core axis of the first coil unit is not parallel to a core axis of the second coil unit.
COIL COMPONENT
A coil component includes a body including a first surface and a second surface disposed to oppose each other in a first direction, a first coil unit disposed in the body, and including a support member and a coil pattern disposed on at least one surface of the support member, a second coil unit disposed in the body, and including a wire-wound type coil; and a plurality of external electrodes connected to the first and second coil units, wherein a core axis of the first coil unit is not parallel to a core axis of the second coil unit.
ELECTRONIC COMPONENT AND COIL COMPONENT
In an electronic component, a terminal electrode has a thickest portion and a part thinner than the thickest portion. Accordingly, an increase in solder fillet forming region occurs when the electronic component is solder-mounted onto a predetermined mounting substrate. In the electronic component, mounting strength is improved as a result of the increase in solder fillet forming region. In addition, in the electronic component, the thickest portion overlaps a bump electrode in a direction orthogonal to the lower surface of an element body. Accordingly, the impact that is applied to the electronic component during the mounting onto the mounting substrate is reduced and the impact resistance of the electronic component is improved.
MANUFACTURING METHOD OF THIN-FILM POWER INDUCTOR AND THIN-FILM POWER INDUCTOR
A manufacturing method of a thin-film power inductor includes: Alloy powder is mixed with plasticizer, adhesive, curing agent, dispersing agent and organic solvent to form slurry; the slurry is applied on a PET film, and drying to form a magnetic band; and the magnetic band is cut to form a plurality of magnetic sheets. A hole is opened on a magnetic sheet to form a hole-shaped magnetic sheet. Electrodes are processed on an insulating substrate to form a coil layer. Magnetic sheets, hole-shaped magnetic sheets, and the coil layer are stacked to form a block. The block is pressed, and the block is cut to form an individual product. The individual product is baked to form a main body. Silver paste is applied on the main body to form outer electrodes. A nickel layer and a tin layer are electroplated on outer electrodes to form a thin-film power inductor.