A virtual adhesion method is provided. The virtual adhesion method includes increasing a magnetic characteristic of an initial structure, supporting the initial structure on a surface of a substrate, generating a magnetic field directed such that the initial structure is forced toward the surface of the substrate and forming an encapsulation, which is bound to exposed portions of the surface, around the initial structure.

Provided is a sputtering target material having excellent crack resistance and a method of producing the same. Also provided is a sputtering target material and a method of producing the same. The sputtering target material is composed of an alloy consisting of B; one or more rare earth elements; and the balance consisting of Co and/or Fe and unavoidable impurities. The amount of B in the alloy is 15 at. % or more and 30 at. % or less. The one or more rare earth elements are selected from the group consisting of Pr, Sm, Gd, Tb, Dy, and Ho. The total amount of the one or more rare earth elements in the alloy is 0.1 at. % or more and 10 at. % or less.

The present disclosure generally relates to a storage device comprising soft bias structures having high coercivity and high anisotropy, and a method of forming thereof. The soft bias structures may be formed by moving a wafer in a first direction under a plume of NiFe to deposit a first NiFe layer at a first angle, moving the wafer in a second direction anti-parallel to the first direction to deposit a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The soft bias structures may be formed by rotating a wafer to a first position, depositing a first NiFe layer at a first angle, rotating the wafer to a second position, depositing a second NiFe layer at a second angle on the first NiFe layer, and repeating one or more times. The first and second NiFe layers have different grain structures.

Provided is a sputtering target, the sputtering target containing 0.05 at % or more of Bi and having a total content of metal oxides of from 10 vol % to 60 vol %, the balance containing at least Co and Pt.

Provided is a sputtering target, the sputtering target containing 0.05 at % or more of Bi and having a total content of metal oxides of from 10 vol % to 60 vol %, the balance containing at least Co and Pt.

Provided is a magnetic recording medium having a large magnetocrystalline anisotropy constant K.sub.u and a high coercivity H.sub.c as well as a sputtering target used for producing such a magnetic recording medium.

A Pt-oxide-based sputtering target consists of 60 vol % or more and less than 100 vol % of a Pt-base alloy phase and more than 0 vol % and 40 vol % or less of an oxide, where the Pt-base alloy phase contains 50 at % or more and 100 at % or less of Pt.

A voltage-controlled magnetic anisotropy (VCMA) magnetic tunnel junction (MTJ) device includes a bottom electrode, a bottom CoFeB fixed layer disposed above and in electrical communication with the bottom electrode, a MgO layer disposed above the bottom CoFeB fixed layer, a top CoFeB free layer disposed above the MgO layer, a Mo capping layer disposed above the top CoFeB free layer, and a top electrode disposed above and in electrical communication with the Mo capping layer. A magnetization state of the top CoFeB free layer is switchable between an original state and an opposite state by applying a switching voltage across the MTJ device for a switching duration corresponding to a half period of a magnetic moment precession of the top CoFeB free layer.

A binary, ternary, quaternary, or quinary Mn—X magnetic material (X represents at least one element selected from Al, Bi, Ga, and Rh) has a thickness of 100 nm or less and exhibits a uniaxial magnetic anisotropy constant of 10.sup.7 erg/cc or higher and a coercive force of 15 kOe or higher in the temperature range of 0° C. or more and 200° C. or less, and a room-temperature saturation magnetization of 400 emu/cc or higher.

A binary, ternary, quaternary, or quinary Mn—X magnetic material (X represents at least one element selected from Al, Bi, Ga, and Rh) has a thickness of 100 nm or less and exhibits a uniaxial magnetic anisotropy constant of 10.sup.7 erg/cc or higher and a coercive force of 15 kOe or higher in the temperature range of 0° C. or more and 200° C. or less, and a room-temperature saturation magnetization of 400 emu/cc or higher.

A multilayer film includes a substrate; a first magnetic layer disposed on the substrate and a second magnetic layer disposed on the first magnetic layer. The first magnetic layer includes Fe.sub.(50-80)N.sub.(10-20)B.sub.(1-20)M.sub.(0-10), wherein M is Si, Ta, Zr, Ti, Co, or a combination thereof. The second magnetic layer includes Fe.sub.(50-90)N.sub.(10-50) or Fe.sub.(60-90)N.sub.(1-10)Ta.sub.(5-30). The multilayer magnetic film has, over a frequency range of 50 MHz to 10 GHz, a magnetic permeability of greater than or equal to 1800 over a selected frequency band in the frequency range; a magnetic loss tangent of less than or equal to 0.3 over a selected frequency band in the frequency range; and a cutoff frequency of greater than or equal to 1 GHz, or greater than or equal to 2 GHz.