A device and to a method of producing a device, wherein the method includes, inter alia, providing a substrate and generating at least two mutually spaced-apart cavities within the substrate. In accordance with the invention, each cavity has a depth of at least 50 m. The cavities are filled up with magnetic particles, wherein the magnetic particles enter into contact with one another at points of contact, and wherein cavities are formed between the points of contact. At least some of the magnetic particles are connected to one another at their points of contact, specifically by coating the magnetic particles, wherein the cavities are at least partly penetrated by the layer produced in the coating process, so that the connected magnetic particles form a magnetic porous structure.

A device and to a method of producing a device, wherein the method includes, inter alia, providing a substrate and generating at least two mutually spaced-apart cavities within the substrate. In accordance with the invention, each cavity has a depth of at least 50 m. The cavities are filled up with magnetic particles, wherein the magnetic particles enter into contact with one another at points of contact, and wherein cavities are formed between the points of contact. At least some of the magnetic particles are connected to one another at their points of contact, specifically by coating the magnetic particles, wherein the cavities are at least partly penetrated by the layer produced in the coating process, so that the connected magnetic particles form a magnetic porous structure.

A magnetic laminating structure and process for preventing substrate bowing include a first magnetic layer, at least one additional magnetic layer, and a dielectric spacer disposed between the first and at least one additional magnetic layers. The magnetic layers are characterized by defined tensile strength. To balance the tensile strength of the magnetic layer, the dielectric layer is selected to provide compressive strength so as to counteract the tendency of the wafer to bow as a consequence of the tensile strength imparted by the magnetic layer(s).

More stable perpendicular magnetization orientation is attained, and switching of the magnetization orientation between an out-of-plane direction and an in-plane direction is enabled by voltage. A multiferroic laminated structure having ferroelectricity and ferromagnetism includes: a ferroelectric layer made of a ferroelectric substance having the ferroelectricity; a foundation layer composed mainly of a metal having a good lattice-matching property with the ferroelectric substance and laminated on a surface of the ferroelectric layer; an intermediate layer composed mainly of a non-magnetic substance and laminated on a surface of the foundation layer; and a ferromagnetic/non-magnetic multilayer film layer constituted by alternately laminating ferromagnetic layers and non-magnetic layers on a surface of the intermediate layer in at least three cycles, the ferromagnetic layers being composed mainly of a ferromagnetic substance, the non-magnetic layers being composed mainly of the non-magnetic substance.

More stable perpendicular magnetization orientation is attained, and switching of the magnetization orientation between an out-of-plane direction and an in-plane direction is enabled by voltage. A multiferroic laminated structure having ferroelectricity and ferromagnetism includes: a ferroelectric layer made of a ferroelectric substance having the ferroelectricity; a foundation layer composed mainly of a metal having a good lattice-matching property with the ferroelectric substance and laminated on a surface of the ferroelectric layer; an intermediate layer composed mainly of a non-magnetic substance and laminated on a surface of the foundation layer; and a ferromagnetic/non-magnetic multilayer film layer constituted by alternately laminating ferromagnetic layers and non-magnetic layers on a surface of the intermediate layer in at least three cycles, the ferromagnetic layers being composed mainly of a ferromagnetic substance, the non-magnetic layers being composed mainly of the non-magnetic substance.

A method of making a ferrite thin film is provided in which a portion of the iron ions in the ferrite are substituted by ions of at least one other metal. The substituting ions occupy both tetrahedral and octahedral sites in the unit cell of the ferrite crystal. The method includes placing each of a plurality of targets, one at a time, in close proximity to a substrate in a defined sequence; ablating the target thus placed using laser pulses, thereby causing ions from the target to deposit on the substrate; repeating these steps, thereby generating a film; and annealing the film in the presence of oxygen. The plurality of targets, the sequence of their ablation, and the number of laser pulses that each target is subjected to, are selected so as to allow the substituting ions to occupy both tetrahedral and octahedral sites in the unit cell.

The present invention provides a method for improving coercive force of magnets, this method comprises steps as follows: S2) coating step: coating a coating material on the surface of a magnet and drying it; and S3) infiltrating step: heat treating the magnet obtained from the coating step S2). The coating material comprises (1) metal calcium particles and (2) particles of a material containing a rare earth element; the rare earth element is at least one selected from Praseodymium, Neodymium, Gadolinium, Terbium, Dysprosium, Holmium, Erbium, Thulium, Ytterbium and Lutetium. The method of the present invention can significantly increase coercive force of a permanent magnet material, while remanence and magnetic energy product hardly decrease. In addition, the method of the present invention can significantly decrease the amount of a rare earth element, and accordingly, decrease the production cost.

The present invention provides a method for improving coercive force of magnets, this method comprises steps as follows: S2) coating step: coating a coating material on the surface of a magnet and drying it; and S3) infiltrating step: heat treating the magnet obtained from the coating step S2). The coating material comprises (1) metal calcium particles and (2) particles of a material containing a rare earth element; the rare earth element is at least one selected from Praseodymium, Neodymium, Gadolinium, Terbium, Dysprosium, Holmium, Erbium, Thulium, Ytterbium and Lutetium. The method of the present invention can significantly increase coercive force of a permanent magnet material, while remanence and magnetic energy product hardly decrease. In addition, the method of the present invention can significantly decrease the amount of a rare earth element, and accordingly, decrease the production cost.

A method of fabricating high magnetic anisotropy materials using a metallic high entropy alloy is described in this disclosure. Targets of metals or targets of alloys comprising at least one elemental ferromagnetic material are used in a sputtering tool to deposit on a substrate thin films of high entropy alloys. The sputtering targets may be elemental targets or they may comprise multiple metals. In addition, targets of materials such as boron, platinum, or aluminum may be included in the sputtering process to enhance magnetic properties of the resultant thin films. The sputtering may take place by co-sputtering multiple targets simultaneously or by alternatively sputtering layers from the targets. After sputtering the materials are heated through a rapid thermal annealing process to a high temperature, which facilitates the formation of the desired crystalline phases which exhibit high magnetocrystalline anisotropy.

A method of fabricating high magnetic anisotropy materials using a metallic high entropy alloy is described in this disclosure. Targets of metals or targets of alloys comprising at least one elemental ferromagnetic material are used in a sputtering tool to deposit on a substrate thin films of high entropy alloys. The sputtering targets may be elemental targets or they may comprise multiple metals. In addition, targets of materials such as boron, platinum, or aluminum may be included in the sputtering process to enhance magnetic properties of the resultant thin films. The sputtering may take place by co-sputtering multiple targets simultaneously or by alternatively sputtering layers from the targets. After sputtering the materials are heated through a rapid thermal annealing process to a high temperature, which facilitates the formation of the desired crystalline phases which exhibit high magnetocrystalline anisotropy.