A method for producing a printed magnetic functional element, in which a substrate is provided on one surface with at least one contact made of an electrically conductive material. Subsequently, a structure made of a material which has a magnetoresistive effect and is in the form of a paste, a gel, a dispersion or a suspension is printed on or onto the at least one contact and touches the contact directly, and the structure becomes electrically conductive and sensitive to magnetic fields by irradiation with electromagnetic radiation over a time period in the millisecond range.

A multilayer free magnetic layer structure for spin-based magnetic memory is provided herein. The multilayer free magnetic structure is employed in a magnetic tunnel junction (MTJ) and includes antiferromagnetically coupled magnetic layers. In some cases, the antiferromagnetic coupling is mediated by RKKY interaction with a Ru, Ir, Mo, Cu, or Rh spacer layer. In some cases, low damping magnetic materials, such as CoFeB, FeB, or CoFeBMo are used for the antiferromagnetically coupled magnetic layers. By employing the multilayer free magnetic structure for the MTJ as variously described herein, the critical or switching current can be significantly reduced compared to, for example, an MTJ employing a single-layer free magnetic layer. Thus, higher device efficiencies can be achieved. In some cases, the magnetic layers of the multilayer free magnetic structure are perpendicular magnets, which can be employed, for example, in perpendicular spin-orbit torque (pSOT) memory devices.

A multilayer free magnetic layer structure for spin-based magnetic memory is provided herein. The multilayer free magnetic structure is employed in a magnetic tunnel junction (MTJ) and includes antiferromagnetically coupled magnetic layers. In some cases, the antiferromagnetic coupling is mediated by RKKY interaction with a Ru, Ir, Mo, Cu, or Rh spacer layer. In some cases, low damping magnetic materials, such as CoFeB, FeB, or CoFeBMo are used for the antiferromagnetically coupled magnetic layers. By employing the multilayer free magnetic structure for the MTJ as variously described herein, the critical or switching current can be significantly reduced compared to, for example, an MTJ employing a single-layer free magnetic layer. Thus, higher device efficiencies can be achieved. In some cases, the magnetic layers of the multilayer free magnetic structure are perpendicular magnets, which can be employed, for example, in perpendicular spin-orbit torque (pSOT) memory devices.

A magnetic tunneling junction (MTJ) memory device including a free and fixed (reference) magnet between first and second electrodes, and a synthetic antiferromagnet structure (SAF) structure between the fixed magnet and one of the electrodes. The SAF structure includes a magnetic skyrmion. Two magnetic skyrmions within a SAF structure may have opposing polarity. A SAF structure may further include a coupling layer between two magnetic layers, as well as interface layers separated from the coupling layer by one of the magnetic layers. The coupling layer may have a spin-orbit coupling effect on the magnetic layers that is of a sign opposite that of the interface layers, for example to promote formation of the magnetic skyrmions.

A tunneling magnetoresistance (TMR) sensor device is disclosed that includes one or more TMR resistors. The TMR sensor device comprises a first TMR resistor comprising a first TMR film, a second TMR resistor comprising a second TMR film different than the first TMR film, a third TMR resistor comprising the second TMR film, and a fourth TMR resistor comprising the first TMR film. The first and fourth TMR resistors are disposed in a first plane while the second and third TMR resistors are disposed in a second plane different than the first plane. The first TMR film comprises a synthetic anti-ferromagnetic pinned layer having a magnetization direction of a reference layer orthogonal to a magnetization direction a free layer. The second TMR film comprises a double synthetic anti-ferromagnetic pinned layer having a magnetization direction of a reference layer orthogonal to a magnetization direction of a free layer.

A spin torque oscillator and a method of making same. The spin torque oscillator is configured to generate microwave electrical oscillations without the use of a magnetic field external thereto, the spin torque oscillator having one of a plurality of input nanopillars and a nanopillar having a plurality of free FM layers.

According to one embodiment, there is provided a spin torque oscillator including an oscillation layer formed of a magnetic material, a spin injection layer formed of a magnetic material and configured to inject a spin into the oscillation layer, and a current confinement layer including an insulating portion formed of an oxide or a nitride and a conductive portion formed of a nonmagnetic metal and penetrating the insulating portion in a direction of stacking. The conductive portion of the current confinement layer is positioned near a central portion of a plane of a device region including the oscillation layer and the spin injection layer.

A permanent magnet comprising an antiferromagnetic layer and a ferromagnetic layer having a first sub-layer made of a first type of ferromagnetic material, the first type of ferromagnetic material being an at least partially crystallized alloy of iron and cobalt, and a second sub-layer made of a second type of ferromagnetic material, this second type of ferromagnetic material also being an alloy of iron and cobalt in which the proportion of face-centered cubic crystals is less than the proportion of face-centered cubic crystals in the first type of ferromagnetic material.

A permanent magnet comprising an antiferromagnetic layer and a ferromagnetic layer having a first sub-layer made of a first type of ferromagnetic material, the first type of ferromagnetic material being an at least partially crystallized alloy of iron and cobalt, and a second sub-layer made of a second type of ferromagnetic material, this second type of ferromagnetic material also being an alloy of iron and cobalt in which the proportion of face-centered cubic crystals is less than the proportion of face-centered cubic crystals in the first type of ferromagnetic material.

The present disclosure relates to the fabrication of spin transfer torque memory devices and spin logic devices, wherein a strain engineered interface is formed within at least one magnet within these devices. In one embodiment, the spin transfer torque memory devices may include a free magnetic layer stack comprising a crystalline magnetic layer abutting a crystalline stressor layer. In another embodiment, the spin logic devices may include an input magnet, an output magnet; wherein at least one of the input magnet and the output magnet comprises a crystalline magnetic layer abutting crystalline stressor layer and/or the crystalline magnetic layer abutting a crystalline spin-coherent channel extending between the input magnet and the output magnet.