A variable capacitor, including: two movable plates, two poles, and one rotary shaft. The two movable plates are conductor belts, and the conductor belts are sheathed in insulators. The two poles are conductors, and each is capable of rotating around an axis thereof. First ends of the two movable plates are connected via the insulators and fixed on the rotary shaft, and second ends of the two movable plates are connected to the two poles, respectively. A conductor member of the two movable plates directly contacts the two poles. The lengths of the two movable plates are identical, and are greater than the distance from one pole to the rotary shaft.

A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.

A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.

The present invention generally relates to a method of operating a MEMS DVC while minimizing impact of the MEMS device on contact surfaces. By reducing the drive voltage upon the pull-in movement of the MEMS device, the acceleration of the MEMS device towards the contact surface is reduced and thus, the impact velocity is reduced and less damage of the MEMS DVC device occurs.

The present invention generally relates to a method of operating a MEMS DVC while minimizing impact of the MEMS device on contact surfaces. By reducing the drive voltage upon the pull-in movement of the MEMS device, the acceleration of the MEMS device towards the contact surface is reduced and thus, the impact velocity is reduced and less damage of the MEMS DVC device occurs.

An MEMS structure-based adjustable capacitor is provided, comprising: a lower plate A, a movable plate B, an upper plate C, a fixed apparatus D and one or more connecting conductors E; a lower end of the fixed apparatus D is fixedly connected to the lower plate A, an upper end of the fixed apparatus D is fixedly connected to the upper plate C, a structure B4 is provided at a middle part of movable plate B, and the movable plate B is able to move up and down along the fixed apparatus D; the lower plate A is provided with a lower electrode A1, and the movable plate B is provided with a movable electrode B1 and adjustment electrodes B2; the lower electrode A1 and the movable electrode B1 constitute a unit capacitor; and the upper plate C is provided with an upper electrode C1 and adjustment electrodes C2.

An MEMS structure-based adjustable capacitor is provided, comprising: a lower plate A, a movable plate B, an upper plate C, a fixed apparatus D and one or more connecting conductors E; a lower end of the fixed apparatus D is fixedly connected to the lower plate A, an upper end of the fixed apparatus D is fixedly connected to the upper plate C, a structure B4 is provided at a middle part of movable plate B, and the movable plate B is able to move up and down along the fixed apparatus D; the lower plate A is provided with a lower electrode A1, and the movable plate B is provided with a movable electrode B1 and adjustment electrodes B2; the lower electrode A1 and the movable electrode B1 constitute a unit capacitor; and the upper plate C is provided with an upper electrode C1 and adjustment electrodes C2.

A multi-band, electro-mechanical programmable impedance tuner for the frequency range between 10 and 200 MHz uses cascades of three or more continuously variable mechanical capacitors interconnected with sets of low loss flexible or semi-rigid cables; for each frequency band a different set of cables and capacitors are used. The cables and/or variable capacitors inside each tuning block are switchable manually or remotely. Multi-section variable capacitors are also used. Instantaneous impedance tuning is effectuated by changing the state of the capacitors using electrical stepper motors. The tuner is calibrated using a vector network analyzer and the data are saved in the memory of the control computer, which then allows tuning to any user defined impedance within the tuning range. Reflection factor values between 0 and higher than 0.9 can be obtained using this tuner at all frequency bands.

A multi-band, electro-mechanical programmable impedance tuner for the frequency range between 10 and 200 MHz uses cascades of three or more continuously variable mechanical capacitors interconnected with sets of low loss flexible or semi-rigid cables; for each frequency band a different set of cables and capacitors are used. The cables and/or variable capacitors inside each tuning block are switchable manually or remotely. Multi-section variable capacitors are also used. Instantaneous impedance tuning is effectuated by changing the state of the capacitors using electrical stepper motors. The tuner is calibrated using a vector network analyzer and the data are saved in the memory of the control computer, which then allows tuning to any user defined impedance within the tuning range. Reflection factor values between 0 and higher than 0.9 can be obtained using this tuner at all frequency bands.

[Theme] To provide a chip capacitor capable of easily and rapidly accommodating a plurality of types of capacitance values using a common design and a method for manufacturing the chip capacitor. [Solution] A chip capacitor 1 includes a substrate 2, a first external electrode 3, a second external electrode 4, capacitor elements C1 to C19, and fuses F1 to F9 disposed on the substrate 2. The capacitor elements C1 to C19 respectively include a first electrode film 11, a first capacitance film 12 on the first electrode film 11, a second electrode film 13 disposed on the first capacitance film 12 and facing the first electrode film 11, a second capacitance film 17 on the second electrode film 13, and a third electrode film 16 disposed on the second capacitance film 17 and facing the second electrode film 13 and are connected between the first external electrode 3 and the second external electrode 4. The fuses F1 to F9 are each interposed between the capacitor elements C1 to C19 and the first external electrode 3 or the second external electrode 4 and are capable of disconnecting each of the capacitor elements C1 to C19.