A temperature-controlled device for switching off a heating device at a limit temperature has a thermo-mechanical temperature sensor device, a switch-off device, and manual reactivation means. The switch-off device has switching means which are activated by a trigger for switching off the heating device. The manual reactivation means have a movable handle and transmission means for transmitting a force of an operator for reactivating the switching means after switching off the heating device by the trigger. The transmission means have a click spring which at the beginning is in a basic position and, when an operating force acting on said click spring exceeds a certain limit force, clicks to a deflected position. Said click spring in the basic position enables reactivating or re-switching on, respectively, of the switching means. Said click spring in the deflected position releases so much movement path on the transmission means for the switching means that said switching means by the temperature sensor device and by the switch-off device above the limit temperature are activatable and switchable by the trigger.

A temperature-controlled device for switching off a heating device at a limit temperature has a thermo-mechanical temperature sensor device, a switch-off device, and manual reactivation means. The switch-off device has switching means which are activated by a trigger for switching off the heating device. The manual reactivation means have a movable handle and transmission means for transmitting a force of an operator for reactivating the switching means after switching off the heating device by the trigger. The transmission means have a click spring which at the beginning is in a basic position and, when an operating force acting on said click spring exceeds a certain limit force, clicks to a deflected position. Said click spring in the basic position enables reactivating or re-switching on, respectively, of the switching means. Said click spring in the deflected position releases so much movement path on the transmission means for the switching means that said switching means by the temperature sensor device and by the switch-off device above the limit temperature are activatable and switchable by the trigger.

A bimetallic controller, having a switching device and at least one bimetal device which is or can be actively connected to the switching device such as to allow the switching device to be switched in a temperature-dependent fashion. The bimetal device includes at least one first bimetal element and at least one curved second bimetal element that are connected to each other in a zone of contact and are designed in said zone of contact such that the coefficient of thermal expansion of the first bimetal element increases from its bottom to the top and the coefficient of thermal expansion of the curved second bimetal element decreases from its bottom to the top, or vice versa.

An apparatus and method for restricting the rotation of a dial control knob on the high setting of an electric cooking range using one of three methods. The first method adds a detent stop internally to the switch. The second method adds a detent stop externally attaching to the control panel behind the top burner knob. Both of the aforementioned methods are designed to prevent rotation of the control knob to a maximum of 227 rotation. A third limits the on/off cycling of the top element switch while in operation to reduce the overall output of the switch.

A thermal trip assembly is for an electrical switching apparatus. The electrical switching apparatus includes a housing, separable contacts enclosed by the housing, an operating mechanism for opening and closing the separable contacts, and a number of shunts. The thermal trip assembly includes a load conductor, a bimetal adapted to cooperate with the operating mechanism to open the separable contacts in response to a trip condition, and a bypass heater element structured to be electrically connected to the shunts. The bypass heater element directs the flow of electric current to at least partially bypass the bimetal.

A thermal trip assembly is for an electrical switching apparatus. The electrical switching apparatus includes a housing, separable contacts enclosed by the housing, an operating mechanism for opening and closing the separable contacts, and a number of shunts. The thermal trip assembly includes a load conductor, a bimetal adapted to cooperate with the operating mechanism to open the separable contacts in response to a trip condition, and a bypass heater element structured to be electrically connected to the shunts. The bypass heater element directs the flow of electric current to at least partially bypass the bimetal.

A thermal trip assembly is for an electrical switching apparatus. The electrical switching apparatus includes a housing, separable contacts enclosed by the housing, an operating mechanism for opening and closing the separable contacts, and a number of shunts. The thermal trip assembly includes a load conductor, a bimetal adapted to cooperate with the operating mechanism to open the separable contacts in response to a trip condition, and a bypass heater element structured to be electrically connected to the shunts. The bypass heater element directs the flow of electric current to at least partially bypass the bimetal.

A thermal trip assembly is for an electrical switching apparatus. The electrical switching apparatus includes a housing, separable contacts enclosed by the housing, an operating mechanism for opening and closing the separable contacts, and a number of shunts. The thermal trip assembly includes a load conductor, a bimetal adapted to cooperate with the operating mechanism to open the separable contacts in response to a trip condition, and a bypass heater element structured to be electrically connected to the shunts. The bypass heater element directs the flow of electric current to at least partially bypass the bimetal.

A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate, and a heater element on the semiconductor substrate, the heater element configured to generate heat in response to a current flowing therethrough. The semiconductor device also includes a conductor material having a programmable conductivity, and an insulator layer between the heater element and the conductor material, where the conductor material is configured to be programmed by applying one or more voltage differences to one or more of the heater element and the conductor material, and where a capacitance between the conductor material and the heater element is configured to be controlled by the voltage differences such that the capacitance is lower while the conductor material is being programmed than while the conductor material is not being programmed.

A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate, and a heater element on the semiconductor substrate, the heater element configured to generate heat in response to a current flowing therethrough. The semiconductor device also includes a conductor material having a programmable conductivity, and an insulator layer between the heater element and the conductor material, where the conductor material is configured to be programmed by applying one or more voltage differences to one or more of the heater element and the conductor material, and where a capacitance between the conductor material and the heater element is configured to be controlled by the voltage differences such that the capacitance is lower while the conductor material is being programmed than while the conductor material is not being programmed.