Electron emitters and method of fabricating the electron emitters are disclosed. According to certain embodiments, an electron emitter includes a tip with a planar region having a diameter in a range of approximately (0.05-10) micrometers. The electron emitter tip is configured to release field emission electrons. The electron emitter further includes a work-function-lowering material coated on the tip.

A thermionic emission device comprises a first electrode, a second electrode, a single carbon nanotube, an insulating layer and a gate electrode. The gate electrode is located on a first surface of the insulating layer. The first electrode and the second electrode are located on a second surface of the insulating layer and spaced apart from each other. The carbon nanotube comprises a first end, a second end opposite to the first end, and a middle portion located between the first end and the second end. The first end of the carbon nanotube is electrically connected to the first electrode, and the second end of the carbon nanotube is electrically connected to the second electrode.

Electron emitters and methods of fabricating the electron emitters are disclosed. According to certain embodiments, an electron emitter includes a tip with a planar region having a diameter in a range of approximately (0.05-10) micrometers. The electron emitter tip is configured to release field emission electrons. The electron emitter further includes a work-function-lowering material coated on the tip.

The invention provides an electron source including a columnar chip of a hexaboride single crystal, a metal pipe that holds the columnar chip of the hexaboride single crystal, and a filament connected to the metal pipe at a central portion. The columnar chip of the hexaboride single crystal is formed into a cone shape at a portion closer to a tip than a portion held in the metal pipe, and a tip end portion having the cone shape has a (310) crystal face. Schottky electrons are emitted from the (310) crystal face. According to the invention, it is possible to provide a novel electron source having monochromaticity, long-term stability of an emitter current, and high current density.

A cathode material for use in a high-pressure discharge lamp contains a matrix based on tungsten having a tungsten content of greater than or equal to 95% by weight, tungsten carbide, and oxides and/or predominantly oxidic phases of one or more emitter elements from the group of rare earth metals, Hf, and Zr. The cathode material additionally contains predominantly carbidic phases of the one or more emitter elements from the group of rare earth metals, Hf, and Zr. A high-pressure discharge lamp would contain such a cathode composed of the above cathode material.

A cathode material for use in a high-pressure discharge lamp contains a matrix based on tungsten having a tungsten content of greater than or equal to 95% by weight, tungsten carbide, and oxides and/or predominantly oxidic phases of one or more emitter elements from the group of rare earth metals, Hf, and Zr. The cathode material additionally contains predominantly carbidic phases of the one or more emitter elements from the group of rare earth metals, Hf, and Zr. A high-pressure discharge lamp would contain such a cathode composed of the above cathode material.

A method for manufacturing an electron source according to the present disclosure includes steps of: (A) preparing a first member provided with a columnar portion made of a first material having an electron emission characteristic, (B) preparing a second member which has a higher work function and a lower strength than the first material, and in which a hole is formed extending in a direction from one end surface toward the other end surface, and (C) pushing the columnar portion into the hole in the second member, wherein the first member has a cross-sectional shape that is dissimilar to the cross-sectional shape of the hole; and in the step (C), by pressing the columnar portion into the hole, a portion of a side surface of the columnar portion scrapes the inner surface of the hole and bites into the second member, thereby fixing the columnar portion to the second member.

A method for manufacturing an electron source according to the present disclosure includes steps of: (A) preparing a first member provided with a columnar portion made of a first material having an electron emission characteristic, (B) preparing a second member which has a higher work function and a lower strength than the first material, and in which a hole is formed extending in a direction from one end surface toward the other end surface, and (C) pushing the columnar portion into the hole in the second member, wherein the first member has a cross-sectional shape that is dissimilar to the cross-sectional shape of the hole; and in the step (C), by pressing the columnar portion into the hole, a portion of a side surface of the columnar portion scrapes the inner surface of the hole and bites into the second member, thereby fixing the columnar portion to the second member.

The current stability of a field emission electron source and a Schottky electron source where a {100} plane of a hexaboride single crystal is used as an electron emission surface is improved. The electron source includes a tip of a hexaboride single crystal with a <100> axis, in which a top facet of a {100} plane that is surrounded by side facets including at least four {n11} planes and at least four {n10} planes where n represents an integer of 1, 2, or 3 is formed at a front end of the tip of the hexaboride single crystal, and a total area of the side facets of the {n11} planes is more than a total area of the side facets of the {n10} planes.

The current stability of a field emission electron source and a Schottky electron source where a {100} plane of a hexaboride single crystal is used as an electron emission surface is improved. The electron source includes a tip of a hexaboride single crystal with a <100> axis, in which a top facet of a {100} plane that is surrounded by side facets including at least four {n11} planes and at least four {n10} planes where n represents an integer of 1, 2, or 3 is formed at a front end of the tip of the hexaboride single crystal, and a total area of the side facets of the {n11} planes is more than a total area of the side facets of the {n10} planes.