A high voltage vacuum feed through (23) for an electron tube (25) has an anode (28) and an insulating body (1) of ceramic material, the insulating body (1) having a continuous hollow space (10). The anode (28) has a rear part (2) and a front part (3) mounted thereto. The rear part (2) consists of a first metallic material, having a thermal expansion coefficient corresponding to a thermal expansion coefficient of the ceramic material. The rear part (2) is arranged in the hollow space (10) of the insulating body (1) and is soldered into the insulating body (1) in a vacuum-tight fashion. The front part (3) has a second metallic material whose heat conductivity is larger than that of the first metallic material. The high voltage vacuum feed through reliably remains vacuum-tight during operation and can be easily provided with different target materials.

A high voltage vacuum feed through (23) for an electron tube (25) has an anode (28) and an insulating body (1) of ceramic material, the insulating body (1) having a continuous hollow space (10). The anode (28) has a rear part (2) and a front part (3) mounted thereto. The rear part (2) consists of a first metallic material, having a thermal expansion coefficient corresponding to a thermal expansion coefficient of the ceramic material. The rear part (2) is arranged in the hollow space (10) of the insulating body (1) and is soldered into the insulating body (1) in a vacuum-tight fashion. The front part (3) has a second metallic material whose heat conductivity is larger than that of the first metallic material. The high voltage vacuum feed through reliably remains vacuum-tight during operation and can be easily provided with different target materials.

An ion trap device is disclosed with a method of manufacturing thereof including a substrate, first and second RF electrode rails, first and second DC electrodes on either upper or lower side of substrate, and a laser penetration passage connected to ion trapping zone from outer side of the first or second side of substrate. The substrate includes ion trapping zone in space defined by first and second sides of substrate separated by a distance with reference to width direction of ion trap device. The first and second RF electrode rails are arranged in parallel longitudinally of ion trap device. The first RF electrode is arranged on upper side of first side, the second DC electrode is arranged on lower side of first side, the first DC electrode is arranged on upper side of second side, and the second RF electrode rail is arranged on lower side of second side.

An apparatus includes an emitter electrode including a phosphorus doped diamond layer with low work function. The apparatus further includes a collector electrode and a vacuum gap disposed between the emitter and the collector. The collector has a work function of 0.84 eV or less.

An apparatus includes an emitter electrode including a phosphorus doped diamond layer with low work function. The apparatus further includes a collector electrode and a vacuum gap disposed between the emitter and the collector. The collector has a work function of 0.84 eV or less.

An ion filter used for an electron multiplier includes an insulating substrate; a first conductive layer formed on one main surface of the substrate; and a second conductive layer formed on another main surface of the substrate. The ion filter has a plurality of through-holes formed along a thickness direction of the substrate. The one main surface of the substrate is disposed at a downstream side in a moving direction of electrons in a chamber of the electron multiplier and the other main surface of the substrate is disposed at an upstream side in the moving direction of electrons in the chamber of the electron multiplier. A first thickness of the first conductive layer formed on the one main surface of the substrate is thicker than a second thickness of the second conductive layer on the other main surface of the substrate.

An ion filter used for an electron multiplier includes an insulating substrate; a first conductive layer formed on one main surface of the substrate; and a second conductive layer formed on another main surface of the substrate. The ion filter has a plurality of through-holes formed along a thickness direction of the substrate. The one main surface of the substrate is disposed at a downstream side in a moving direction of electrons in a chamber of the electron multiplier and the other main surface of the substrate is disposed at an upstream side in the moving direction of electrons in the chamber of the electron multiplier. A first thickness of the first conductive layer formed on the one main surface of the substrate is thicker than a second thickness of the second conductive layer on the other main surface of the substrate.

Traveling-wave tube amplifiers for high-frequency signals, including terahertz signals, and methods for making a slow-wave structure for the traveling-wave tube amplifiers are provided. The slow-wave structures include helical conductors that are self-assembled via the release and relaxation of strained films from a sacrificial growth substrate.

Traveling-wave tube amplifiers for high-frequency signals, including terahertz signals, and methods for making a slow-wave structure for the traveling-wave tube amplifiers are provided. The slow-wave structures include helical conductors that are self-assembled via the release and relaxation of strained films from a sacrificial growth substrate.

A discharge chamber for a deep ultraviolet (DUV) light source includes a housing; and a first electrode and a second electrode in the housing, the first electrode and the second electrode being separated from each other to form a discharge region between the first electrode and the second electrode, the discharge region being configured to receive a gain medium including at least one noble gas and a halogen gas. At least one of the first electrode and the second electrode includes a metal alloy including more than 33% and less than 50% zinc by weight.