H01J9/14

ELECTRODE FOR A DISCHARGE CHAMBER
20210384027 · 2021-12-09 ·

A discharge chamber for a deep ultraviolet (DUV) light source includes a housing; and a first electrode and a second electrode in the housing, the first electrode and the second electrode being separated from each other to form a discharge region between the first electrode and the second electrode, the discharge region being configured to receive a gain medium including at least one noble gas and a halogen gas. At least one of the first electrode and the second electrode includes a metal alloy including more than 33% and less than 50% zinc by weight.

DUOPLASMATRON ION SOURCE WITH A PARTIALLY FERROMAGNETIC ANODE
20210375574 · 2021-12-02 ·

A duoplasmatron ion source with a partially ferromagnetic anode can be used in multiple applications, including the production of negative ions for secondary ion mass spectrometers and particle accelerators. A partially ferromagnetic anode, which may be embodied in a partially ferromagnetic anode insert, includes a ferromagnetic and non-ferromagnetic portions joined together at a juncture, with an ion extraction aperture defined in the ferromagnetic portion and the juncture being laterally offset from the aperture. An asymmetric magnetic field produced by the partially ferromagnetic region facilitates extraction of charged ions from the central, most intense region of a source plasma in the duoplasmatron ion source. A ferromagnetic conical portion of the anode defines the ion extraction aperture in order to maximize the magnetic field in the vicinity of this aperture.

DUOPLASMATRON ION SOURCE WITH A PARTIALLY FERROMAGNETIC ANODE
20210375574 · 2021-12-02 ·

A duoplasmatron ion source with a partially ferromagnetic anode can be used in multiple applications, including the production of negative ions for secondary ion mass spectrometers and particle accelerators. A partially ferromagnetic anode, which may be embodied in a partially ferromagnetic anode insert, includes a ferromagnetic and non-ferromagnetic portions joined together at a juncture, with an ion extraction aperture defined in the ferromagnetic portion and the juncture being laterally offset from the aperture. An asymmetric magnetic field produced by the partially ferromagnetic region facilitates extraction of charged ions from the central, most intense region of a source plasma in the duoplasmatron ion source. A ferromagnetic conical portion of the anode defines the ion extraction aperture in order to maximize the magnetic field in the vicinity of this aperture.

MEMS-based 3D ion trapping device for using laser penetrating ion trapping structure, and method for manufacturing same

An ion trap device is disclosed with a method of manufacturing thereof including a substrate, first and second RF electrode rails, first and second DC electrodes on either upper or lower side of substrate, and a laser penetration passage connected to ion trapping zone from outer side of the first or second side of substrate. The substrate includes ion trapping zone in space defined by first and second sides of substrate separated by a distance with reference to width direction of ion trap device. The first and second RF electrode rails are arranged in parallel longitudinally of ion trap device. The first RF electrode is arranged on upper side of first side, the second DC electrode is arranged on lower side of first side, the first DC electrode is arranged on upper side of second side, and the second RF electrode rail is arranged on lower side of second side.

MEMS-based 3D ion trapping device for using laser penetrating ion trapping structure, and method for manufacturing same

An ion trap device is disclosed with a method of manufacturing thereof including a substrate, first and second RF electrode rails, first and second DC electrodes on either upper or lower side of substrate, and a laser penetration passage connected to ion trapping zone from outer side of the first or second side of substrate. The substrate includes ion trapping zone in space defined by first and second sides of substrate separated by a distance with reference to width direction of ion trap device. The first and second RF electrode rails are arranged in parallel longitudinally of ion trap device. The first RF electrode is arranged on upper side of first side, the second DC electrode is arranged on lower side of first side, the first DC electrode is arranged on upper side of second side, and the second RF electrode rail is arranged on lower side of second side.

Method of Forming a Source/Drain
20220123117 · 2022-04-21 ·

Embodiments provide a way of treating source/drain recesses with a high heat treatment and an optional hydrogen plasma treatment. The high heat treatment smooths the surfaces inside the recesses and remove oxides and etching byproducts. The hydrogen plasma treatment enlarges the recesses vertically and horizontally and inhibits further oxidation of the surfaces in the recesses.

Fine shadow mask assembly for an active matrix organic light emitting diode (AMOLED) and fine shadow mask assembly manufacturing method
11217749 · 2022-01-04 ·

An active matrix organic light emitting diode shadow mask assembly includes a shadow mask frame, longitudinal supporting bars, transverse spacer plates, shadow mask plates. The longitudinal supporting bars are disposed on the shadow mask frame at intervals. The transverse spacer plates are disposed on circular rod portions of the longitudinal supporting bars, are supported by the longitudinal supporting bars, are arranged at intervals. The shadow mask plates are disposed on the transverse spacer plates, are supported by the longitudinal supporting bars, parallel the transverse spacer plates. Each transverse spacer plate is located under a gap between adjacent shadow mask plates, contacts the shadow mask plates, covers the gap. The transverse spacer plates directly contacting the shadow mask plates effectively cover the gaps between the shadow mask plates, effectively prevent organic material in a later process from leaking through the shadow mask plates, dropping on to a lower glass substrate.

Method of forming a source/drain

Embodiments provide a way of treating source/drain recesses with a high heat treatment and an optional hydrogen plasma treatment. The high heat treatment smooths the surfaces inside the recesses and remove oxides and etching byproducts. The hydrogen plasma treatment enlarges the recesses vertically and horizontally and inhibits further oxidation of the surfaces in the recesses.

Electrode for a discharge chamber
11749520 · 2023-09-05 · ·

A discharge chamber for a deep ultraviolet (DUV) light source includes a housing; and a first electrode and a second electrode in the housing, the first electrode and the second electrode being separated from each other to form a discharge region between the first electrode and the second electrode, the discharge region being configured to receive a gain medium including at least one noble gas and a halogen gas. At least one of the first electrode and the second electrode includes a metal alloy including more than 33% and less than 50% zinc by weight.

Electrode for a discharge chamber
11749520 · 2023-09-05 · ·

A discharge chamber for a deep ultraviolet (DUV) light source includes a housing; and a first electrode and a second electrode in the housing, the first electrode and the second electrode being separated from each other to form a discharge region between the first electrode and the second electrode, the discharge region being configured to receive a gain medium including at least one noble gas and a halogen gas. At least one of the first electrode and the second electrode includes a metal alloy including more than 33% and less than 50% zinc by weight.