Patent classifications
H01J11/22
HIGH-RESOLUTION DISPLAY PLASMA MODULE AND MANUFACTURING METHOD THEREOF
The present invention belongs to the field of electronic display technology, and relates to a high-resolution display plasma module and a manufacturing method thereof. The high-resolution display plasma module includes a pixel electrode and a transparent electrode. A display plasma is provided between the pixel electrode and the transparent electrode, and a spacer frame is provided around the display plasma. A plasma barrier enclosure array is provided on the pixel electrode. The plasma barrier enclosure array includes a plurality of plasma barrier enclosures arranged in an array. The pixel electrode includes a plurality of pixel electrode units arranged in an array. The plasma barrier enclosure is located on the gap between the pixel electrode units. Each plasma barrier enclosure contains only one pixel electrode unit.
Process chamber for field guided exposure and method for implementing the process chamber
A method and apparatus disclosed herein apply to processing a substrate, and more specifically to a method and apparatus for improving photolithography processes. The apparatus includes a chamber body, a substrate support disposed within the chamber body, and an electrode assembly. The substrate support has a top plate disposed above the substrate support, a bottom plate disposed below the substrate support, and a plurality of electrodes connecting the top plate to the bottom plate. A voltage is applied to the plurality of electrodes to generate an electric field. Methods for exposing a photoresist layer on a substrate to an electric field are also disclosed herein.
Process chamber for field guided exposure and method for implementing the process chamber
A method and apparatus disclosed herein apply to processing a substrate, and more specifically to a method and apparatus for improving photolithography processes. The apparatus includes a chamber body, a substrate support disposed within the chamber body, and an electrode assembly. The substrate support has a top plate disposed above the substrate support, a bottom plate disposed below the substrate support, and a plurality of electrodes connecting the top plate to the bottom plate. A voltage is applied to the plurality of electrodes to generate an electric field. Methods for exposing a photoresist layer on a substrate to an electric field are also disclosed herein.
Lead-free glass composition, glass composite material, glass paste, sealing structure, electrical/electronic component and coated component
The purpose of the present invention is to provide a lead-free glass composition in which crystallization is suppressed and which has a low softening point. This lead-free glass composition is characterized by containing silver oxide, tellurium oxide and vanadium oxide, and further containing at least one compound selected from among yttrium oxide, lanthanum oxide, cerium oxide, erbium oxide, ytterbium oxide, aluminum oxide, gallium oxide, indium oxide, iron oxide, tungsten oxide and molybdenum oxide as an additional component, and in that the content values (mol %) of silver oxide, tellurium oxide and vanadium oxide satisfy the relationships Ag.sub.2O>TeO.sub.2V.sub.2O.sub.5 and Ag.sub.5O2V.sub.2O.sub.5 when calculated in terms of the oxides, and in that the content of TeO.sub.2 is 25-37 mol. %.
Lead-free glass composition, glass composite material, glass paste, sealing structure, electrical/electronic component and coated component
The purpose of the present invention is to provide a lead-free glass composition in which crystallization is suppressed and which has a low softening point. This lead-free glass composition is characterized by containing silver oxide, tellurium oxide and vanadium oxide, and further containing at least one compound selected from among yttrium oxide, lanthanum oxide, cerium oxide, erbium oxide, ytterbium oxide, aluminum oxide, gallium oxide, indium oxide, iron oxide, tungsten oxide and molybdenum oxide as an additional component, and in that the content values (mol %) of silver oxide, tellurium oxide and vanadium oxide satisfy the relationships Ag.sub.2O>TeO.sub.2V.sub.2O.sub.5 and Ag.sub.5O2V.sub.2O.sub.5 when calculated in terms of the oxides, and in that the content of TeO.sub.2 is 25-37 mol. %.
Gas discharge tube assemblies
A gas discharge tube assembly includes a multi-cell gas discharge tube (GDT). The multi-cell GDT includes a housing defining a GDT chamber, a plurality of inner electrodes located in the GDT chamber, a trigger resistor located in the GDT chamber, and a gas contained in the GDT chamber. The inner electrodes are serially disposed in the chamber in spaced apart relation to define a series of cells and spark gaps. The trigger resistor includes an interface surface exposed to at least one of the cells. The trigger resistor is responsive to an electrical surge through the trigger resistor to generate a spark along the interface surface and thereby promote an electrical arc in the at least one cell.
Gas discharge tube assemblies
A gas discharge tube assembly includes a multi-cell gas discharge tube (GDT). The multi-cell GDT includes a housing defining a GDT chamber, a plurality of inner electrodes located in the GDT chamber, a trigger resistor located in the GDT chamber, and a gas contained in the GDT chamber. The inner electrodes are serially disposed in the chamber in spaced apart relation to define a series of cells and spark gaps. The trigger resistor includes an interface surface exposed to at least one of the cells. The trigger resistor is responsive to an electrical surge through the trigger resistor to generate a spark along the interface surface and thereby promote an electrical arc in the at least one cell.
GAS DISCHARGE TUBE ASSEMBLIES
A gas discharge tube assembly includes a multi-cell gas discharge tube (GDT). The multi-cell GDT includes a housing defining a GDT chamber, a plurality of inner electrodes located in the GDT chamber, a trigger resistor located in the GDT chamber, and a gas contained in the GDT chamber. The inner electrodes are serially disposed in the chamber in spaced apart relation to define a series of cells and spark gaps. The trigger resistor includes an interface surface exposed to at least one of the cells. The trigger resistor is responsive to an electrical surge through the trigger resistor to generate a spark along the interface surface and thereby promote an electrical arc in the at least one cell.
GAS DISCHARGE TUBE ASSEMBLIES
A gas discharge tube assembly includes a multi-cell gas discharge tube (GDT). The multi-cell GDT includes a housing defining a GDT chamber, a plurality of inner electrodes located in the GDT chamber, a trigger resistor located in the GDT chamber, and a gas contained in the GDT chamber. The inner electrodes are serially disposed in the chamber in spaced apart relation to define a series of cells and spark gaps. The trigger resistor includes an interface surface exposed to at least one of the cells. The trigger resistor is responsive to an electrical surge through the trigger resistor to generate a spark along the interface surface and thereby promote an electrical arc in the at least one cell.
PROCESS CHAMBER FOR FIELD GUIDED EXPOSURE AND METHOD FOR IMPLEMENTING THE PROCESS CHAMBER
A method and apparatus disclosed herein apply to processing a substrate, and more specifically to a method and apparatus for improving photolithography processes. The apparatus includes a chamber body, a substrate support disposed within the chamber body, and an electrode assembly. The substrate support has a top plate disposed above the substrate support, a bottom plate disposed below the substrate support, and a plurality of electrodes connecting the top plate to the bottom plate. A voltage is applied to the plurality of electrodes to generate an electric field. Methods for exposing a photoresist layer on a substrate to an electric field are also disclosed herein.