Metallic ion source for resolving the issue of not being able to produce high-density ions efficiently with small-scale ion sources in situations where an electron beam injecting scheme is employed as the evaporation source to evaporate a solid, and for producing high-density ions highly efficiently. Designed to be compact and lightweight, the metallic ion source also facilitates selection of the ion extraction direction. The ion source, structured exploiting the characteristic physical property that whether ionization takes place is dependent on the energy of the electron beam, is furnished with a dual evaporation-plasma chamber that inside the same chamber enables a high-speed electron beam, whose ionization efficiency is low, and low-speed electrons generated by electric discharge, whose ionization efficiency is high, to participate independently and simultaneously in, respectively, evaporation of precursor and ionization action.

Metallic ion source for resolving the issue of not being able to produce high-density ions efficiently with small-scale ion sources in situations where an electron beam injecting scheme is employed as the evaporation source to evaporate a solid, and for producing high-density ions highly efficiently. Designed to be compact and lightweight, the metallic ion source also facilitates selection of the ion extraction direction. The ion source, structured exploiting the characteristic physical property that whether ionization takes place is dependent on the energy of the electron beam, is furnished with a dual evaporation-plasma chamber that inside the same chamber enables a high-speed electron beam, whose ionization efficiency is low, and low-speed electrons generated by electric discharge, whose ionization efficiency is high, to participate independently and simultaneously in, respectively, evaporation of precursor and ionization action.

An assembly present in an ion source for supporting an arc chamber upon a base plate includes a first arc support plate, a first screw, and a second screw. The first screw passes through a smooth through-hole in an arm of the first arc support plate and extends into a bore in the base plate. The second (or adjustable) screw passes through a threaded through-hole in an arm of the first arc support plate and engages an upper surface of the base plate itself, and can be used to change the altitude and angle of the first arc support plate relative to the base plate. This adjustment ability improves the beam quality of the ion source.

An assembly present in an ion source for supporting an arc chamber upon a base plate includes a first arc support plate, a first screw, and a second screw. The first screw passes through a smooth through-hole in an arm of the first arc support plate and extends into a bore in the base plate. The second (or adjustable) screw passes through a threaded through-hole in an arm of the first arc support plate and engages an upper surface of the base plate itself, and can be used to change the altitude and angle of the first arc support plate relative to the base plate. This adjustment ability improves the beam quality of the ion source.

An ionization device includes: a plasma generating device for generating metastable particles and/or ions of an ionization gas in a primary plasma region; a field generating device for generating a glow discharge in a secondary plasma region; an inlet for supplying a gas to be ionized into the secondary plasma region; and a further inlet for supplying the metastable particles and/or the ions of the ionization gas into the secondary plasma region. A mass spectrometer includes such an ionization device and a detector downstream of the outlet of the ionization device for the mass-spectrometric analysis of the ionized gas.

An ionization device includes: a plasma generating device for generating metastable particles and/or ions of an ionization gas in a primary plasma region; a field generating device for generating a glow discharge in a secondary plasma region; an inlet for supplying a gas to be ionized into the secondary plasma region; and a further inlet for supplying the metastable particles and/or the ions of the ionization gas into the secondary plasma region. A mass spectrometer includes such an ionization device and a detector downstream of the outlet of the ionization device for the mass-spectrometric analysis of the ionized gas.

An ion source device for producing an ion beam may include a housing having an opening, a first electrode, and a second electrode. A portion of the first electrode and the second electrode may be located within the housing. The first electrode may have a first side facing the opening and may be configured to provide an electric field toward the opening. The second electrode may be configured to provide an electron presence between the first electrode and the opening at least at times when the first electrode is not providing the first electric field. The ion source device may include a magnet and may produce a magnetic field generally perpendicular to the electric field provided by the first electrode. The ion source device may provide an ion beam with low turn on delay, which may be on the order of one microsecond or less, and low turn on jitter.

An assembly present in an ion source for supporting an arc chamber upon a base plate includes a first arc support plate, a first screw, and a second screw. The first screw passes through a smooth through-hole in an arm of the first arc support plate and extends into a bore in the base plate. The second (or adjustable) screw passes through a threaded through-hole in an arm of the first arc support plate and engages an upper surface of the base plate itself, and can be used to change the altitude and angle of the first arc support plate relative to the base plate. This adjustment ability improves the beam quality of the ion source.

An assembly present in an ion source for supporting an arc chamber upon a base plate includes a first arc support plate, a first screw, and a second screw. The first screw passes through a smooth through-hole in an arm of the first arc support plate and extends into a bore in the base plate. The second (or adjustable) screw passes through a threaded through-hole in an arm of the first arc support plate and engages an upper surface of the base plate itself, and can be used to change the altitude and angle of the first arc support plate relative to the base plate. This adjustment ability improves the beam quality of the ion source.

An implantation device is disclosed. In particular, an implantation device includes an ionization chamber having a cathode and a repeller arranged therein. A source of aluminum ions is including within the chamber, wherein a displacing gas is introduced to the chamber during an ionization process to yield a beam of energetic aluminum ions.