A plasma ion source includes: a gas introduction chamber, into which raw gas is introduced; a plasma generation chamber connected to the gas introduction chamber and made of a dielectric material; a coil wound along an outer circumference of the plasma generation chamber and to which high-frequency power is applied; an envelope surrounding the gas introduction chamber, the plasma generation chamber and the coil; and insulating liquid filled inside the gas introduction chamber, the plasma generation chamber and the envelope to immerse the coil and having an dielectric strength voltage relatively greater than that of the envelope and the same dielectric dissipation factor as the plasma generation chamber.

A plasma ion source includes: a gas introduction chamber, into which raw gas is introduced; a plasma generation chamber connected to the gas introduction chamber and made of a dielectric material; a coil wound along an outer circumference of the plasma generation chamber and to which high-frequency power is applied; an envelope surrounding the gas introduction chamber, the plasma generation chamber and the coil; and insulating liquid filled inside the gas introduction chamber, the plasma generation chamber and the envelope to immerse the coil and having an dielectric strength voltage relatively greater than that of the envelope and the same dielectric dissipation factor as the plasma generation chamber.

Methods and systems for performing ionization, including applying radio frequency energy to a chemical compound so that at least one ion of the compound or of a compound fragment is generated, and detecting at least one such ion.

Methods and systems for performing ionization, including applying radio frequency energy to a chemical compound so that at least one ion of the compound or of a compound fragment is generated, and detecting at least one such ion.

The ion source includes a microwave power supply provided outside main magnetic poles, a radiofrequency waveguide and an antenna configured to introduce a microwave generated by the microwave power supply to a region to which a magnetic field generated by the main magnetic poles is applied, and a magnetic field generation unit provided inside a hole provided in a part of the main magnetic poles and configured to generate a magnetic field in a direction opposite to that of the magnetic field generated by the main magnetic poles. Plasma is generated inside the main magnetic poles by a magnetic field generated by applying the magnetic field generated by the magnetic field generation unit in the opposite direction to the main magnetic field decreased according to a diameter of the hole and the microwave introduced by the radiofrequency waveguide and the antenna.

Provided is a negative ion source and a negative ion generation method capable of providing a high negative ion generation efficiency. A negative ion source includes a housing that includes: an inlet from which a sample is introduced; a plasma generation region communicated with the inlet, a plasma being generated by discharge in the plasma generation region; a negative ion generation region in which particles dissociated or excited by a reaction of the generated plasma with the sample are converted into negative ions; and an extraction port communicated with the negative ion generation region, the generated negative ions being extracted outside through the extraction port. The negative ion generation region is filled with a thermionic emission material for generating thermoelectrons by high frequency heating.

Provided herein are approaches for performing electrodynamic mass analysis with a radio frequency (RF) biased ion source to reduce ion beam energy spread. In some embodiments, a system may include an ion source including a power supply, the ion source operable to generate a plasma within a chamber housing, and an extraction power assembly including a first power supply and a second power supply electrically coupled with the chamber housing of the ion source, wherein the first power supply and the second power supply are operable to bias the chamber housing of the ion source with a time modulated voltage to extract an ion beam from the ion source. The system may further include an electrodynamic mass analysis (EDMA) assembly operable to receive the ion beam and perform mass analysis on the ion beam.

A plasma processing apparatus includes a chamber having a space therein and configured to process a target object loaded into the space by plasma generated in the space; a gas supply unit configured to supply a processing gas into the space of the chamber; a high frequency antenna having a plurality of lines adjacent to each other and configured to generate the plasma in the space by an induced electric field generated in the space by a current flowing in the lines; and a plurality of holders configured to hold the lines of the high frequency antenna. The holders are arranged on the respective lines of the high frequency antenna such that the adjacent holders are spaced from each other by a gap of a predetermined distance or more.

A plasma processing apparatus includes a chamber having a space therein and configured to process a target object loaded into the space by plasma generated in the space; a gas supply unit configured to supply a processing gas into the space of the chamber; a high frequency antenna having a plurality of lines adjacent to each other and configured to generate the plasma in the space by an induced electric field generated in the space by a current flowing in the lines; and a plurality of holders configured to hold the lines of the high frequency antenna. The holders are arranged on the respective lines of the high frequency antenna such that the adjacent holders are spaced from each other by a gap of a predetermined distance or more.

Apparatus for a multi-source ion beam etching (IBE) system are provided herein. In some embodiments, a multi-source IBE system includes a multi-source lid comprising a multi-source adaptor and a lower chamber adaptor, a plurality of IBE sources coupled to the multi-source adaptor, a rotary shield assembly coupled to a shield motor mechanism configured to rotate the rotary shield, wherein the shield motor mechanism is coupled to a top portion of the multi-source lid, and wherein the rotary shield includes a body that has one IBE source opening formed through the body, and at least one beam conduit that engages the one IBE source opening in the rotary shield on one end, and engages the bottom portion of the IBE sources on the opposite end of the beam conduit.