An ion source is provided that includes a structured sample and a method for the ionization and/or its enhancement is provided, which preferably relies on field emission and/or field ionization processes. These processes can be brought about by structures with appropriate geometries, which cause a high electric field gradient at or near the sample.

Apparatus for a multi-source ion beam etching (IBE) system are provided herein. In some embodiments, a multi-source IBE system includes a multi-source lid comprising a multi-source adaptor and a lower chamber adaptor, a plurality of IBE sources coupled to the multi-source adaptor, a rotary shield assembly coupled to a shield motor mechanism configured to rotate the rotary shield, wherein the shield motor mechanism is coupled to a top portion of the multi-source lid, and wherein the rotary shield includes a body that has one IBE source opening formed through the body, and at least one beam conduit that engages the one IBE source opening in the rotary shield on one end, and engages the bottom portion of the IBE sources on the opposite end of the beam conduit.

A negative ion source includes a plasma chamber, a microwave source, a negative ion converter, a magnetic filter and a beam formation mechanism. The plasma chamber contains gas to be ionized. The microwave source transmits microwaves to the plasma chamber to ionize the gas into atomic species including hyperthermal neutral atoms. The negative ion converter converts the hyperthermal neutral atoms to negative ions. The magnetic filter reduces a temperature of an electron density provided between the plasma chamber and the negative ion converter. The beam formation mechanism extract the negative ions.

A negative ion source includes a plasma chamber, a microwave source, a negative ion converter, a magnetic filter and a beam formation mechanism. The plasma chamber contains gas to be ionized. The microwave source transmits microwaves to the plasma chamber to ionize the gas into atomic species including hyperthermal neutral atoms. The negative ion converter converts the hyperthermal neutral atoms to negative ions. The magnetic filter reduces a temperature of an electron density provided between the plasma chamber and the negative ion converter. The beam formation mechanism extract the negative ions.

The present disclosure combines inductively coupled plasma (ICP) ion-source technology together with laser-cooling and photoionization techniques to create a new ion source that has improved performance.

The invention concerns a plasma source including a quarter wave antenna (204) located in a cylindrical enclosure (202) provided with an opening (208) opposite the end of the antenna (204). The diameter (d) of the antenna (204) is in the range from one third to one quarter of the inner diameter (d.sub.1) of the enclosure (202). The distance (l) between the end of the antenna (204) and the opening (208) is in the range from to 5/3 of the diameter (d) of the antenna (204).

The invention concerns a plasma source including a quarter wave antenna (204) located in a cylindrical enclosure (202) provided with an opening (208) opposite the end of the antenna (204). The diameter (d) of the antenna (204) is in the range from one third to one quarter of the inner diameter (d.sub.1) of the enclosure (202). The distance (l) between the end of the antenna (204) and the opening (208) is in the range from to 5/3 of the diameter (d) of the antenna (204).

The invention concerns a plasma source including a quarter wave antenna (204) located in a cylindrical enclosure (202) provided with an opening (208) opposite the end of the antenna (204). The diameter (d) of the antenna (204) is in the range from one third to one quarter of the inner diameter (d.sub.1) of the enclosure (202). The distance (l) between the end of the antenna (204) and the opening (208) is in the range from to 5/3 of the diameter (d) of the antenna (204).

The invention concerns a plasma source including a quarter wave antenna (204) located in a cylindrical enclosure (202) provided with an opening (208) opposite the end of the antenna (204). The diameter (d) of the antenna (204) is in the range from one third to one quarter of the inner diameter (d.sub.1) of the enclosure (202). The distance (l) between the end of the antenna (204) and the opening (208) is in the range from to 5/3 of the diameter (d) of the antenna (204).

An ion source apparatus which generates dopant species in a manner enabling low vapor pressure dopant source materials to be employed. The ion source apparatus (10), comprising: an ion source chamber (12); and a consumable structure in or associated with the ion source chamber (12), said consumable structure comprising a solid dopant source material susceptible to reaction with a reactive gas for release of dopant in gaseous form to the ion source chamber. For example, the consumable structure is a dopant gas feed line (14) comprising a pipe or conduit having an interior layer formed of a solid dopant source material.