Disclosed is an electron beam emission device comprising a housing which defines a space in which electron beams are accelerated, and has an opening at the other side thereof through which the electron beams are emitted; a cathode which is disposed at one side in the housing, and emits the electrons; an anode which is positioned in the housing so as to be spaced apart from the cathode toward the other side, and accelerates the electrons emitted from the cathode; and an insulation holder which insulates a portion between the cathode and the housing, and fixes the cathode, wherein the cathode has a surface which faces the anode and is formed concavely to have a gradient, and a rim of the surface of the cathode, which has the gradient, is formed to be rounded.

Disclosed is an electron beam emission device comprising a housing which defines a space in which electron beams are accelerated, and has an opening at the other side thereof through which the electron beams are emitted; a cathode which is disposed at one side in the housing, and emits the electrons; an anode which is positioned in the housing so as to be spaced apart from the cathode toward the other side, and accelerates the electrons emitted from the cathode; and an insulation holder which insulates a portion between the cathode and the housing, and fixes the cathode, wherein the cathode has a surface which faces the anode and is formed concavely to have a gradient, and a rim of the surface of the cathode, which has the gradient, is formed to be rounded.

Provided is a field emission device including a cathode electrode and an anode electrode, which are spaced apart from each other, an emitter disposed on the cathode electrode, a gate electrode disposed between the cathode electrode and the anode electrode and including a gate opening that overlaps the emitter, and a plurality of alignment electrodes disposed between the gate electrode and the cathode electrode. Here, the alignment electrodes surround a side surface of the emitter.

Provided is a field emission device including a cathode electrode and an anode electrode, which are spaced apart from each other, an emitter disposed on the cathode electrode, a gate electrode disposed between the cathode electrode and the anode electrode and including a gate opening that overlaps the emitter, and a plurality of alignment electrodes disposed between the gate electrode and the cathode electrode. Here, the alignment electrodes surround a side surface of the emitter.

Aspects of the present disclosure describe an atomic oven including a cathode, an anode that comprises a source material, and a power supply that provides a voltage between the cathode and the anode, wherein applying the voltage causes multiple electrons from the cathode to ablate the source material from the anode or locally heat the anode to cause source material to evaporate from the anode and, in both case, to produce a stream of ablated or evaporated particles that passes through an opening in the cathode.

A high-power vacuum electron device source of 10 mm-0.1 mm wavelength radiation is composed of an electron gun joined to a RF vacuum electronic circuit. The electron gun includes a cathode, a focus electrode, and a grid. It generates an electron beam that is injected into the circuit for amplifying RF waves. The circuit is composed of metal circuit plates, e.g., copper alloy, that mate with each other and are shaped to provide a beam tunnel and RF circuit envelopes. Precision alignment pins made of nickel super alloy, are used to mutually align the metal circuit plates using elastic averaging implemented by positioning the precision alignment pins in precision alignment holes in the metal circuit plates. Preferably, the electron gun is aligned with the circuit using quasi-kinematic coupling.

A high-power vacuum electron device source of 10 mm-0.1 mm wavelength radiation is composed of an electron gun joined to a RF vacuum electronic circuit. The electron gun includes a cathode, a focus electrode, and a grid. It generates an electron beam that is injected into the circuit for amplifying RF waves. The circuit is composed of metal circuit plates, e.g., copper alloy, that mate with each other and are shaped to provide a beam tunnel and RF circuit envelopes. Precision alignment pins made of nickel super alloy, are used to mutually align the metal circuit plates using elastic averaging implemented by positioning the precision alignment pins in precision alignment holes in the metal circuit plates. Preferably, the electron gun is aligned with the circuit using quasi-kinematic coupling.

A high-power vacuum electron device source of 10 mm-0.1 mm wavelength radiation is composed of an electron gun joined to a RF vacuum electronic circuit. The electron gun includes a cathode, a focus electrode, and a grid. It generates an electron beam that is injected into the circuit for amplifying RF waves. The circuit is composed of metal circuit plates, e.g., copper alloy, that mate with each other and are shaped to provide a beam tunnel and RF circuit envelopes. Precision alignment pins made of nickel super alloy, are used to mutually align the metal circuit plates using elastic averaging implemented by positioning the precision alignment pins in precision alignment holes in the metal circuit plates. Preferably, the electron gun is aligned with the circuit using quasi-kinematic coupling.

A high-power vacuum electron device source of 10 mm-0.1 mm wavelength radiation is composed of an electron gun joined to a RF vacuum electronic circuit. The electron gun includes a cathode, a focus electrode, and a grid. It generates an electron beam that is injected into the circuit for amplifying RF waves. The circuit is composed of metal circuit plates, e.g., copper alloy, that mate with each other and are shaped to provide a beam tunnel and RF circuit envelopes. Precision alignment pins made of nickel super alloy, are used to mutually align the metal circuit plates using elastic averaging implemented by positioning the precision alignment pins in precision alignment holes in the metal circuit plates. Preferably, the electron gun is aligned with the circuit using quasi-kinematic coupling.

An apparatus, system and method is provided for producing stacked wafers containing an array of image intensifiers that can be evacuated on a wafer scale. The wafer scale fabrication techniques, including bonding, evacuation, and compression sealing concurrently forms a plurality of EBCMOS imager anodes with design elements that enable high voltage operation with optional enhancement of additional gain via TMSE amplification. The TMSE amplification is preferably one or more multiplication semiconductor wafers of an array of EBD die placed between a photocathode within a photocathode wafer and an imager anode that is preferably an EBCMOS imager anode bonded to or integrated within an interconnect die within an interconnect wafer.