A photocathode for use in vacuum electronic devices has a bandgap gradient across the thickness (or depth) of the photocathode between the emitting surface and the opposing surface. This bandgap gradient compensates for depth-dependent variations in transport energetics. When the bandgap energy E.sub.BG(z) is increased for electrons with shorter path lengths to the emitting surface and decreased for electrons with longer path lengths to the emitting surface, such that the sum of E.sub.BG(z) and the scattering energy is substantially constant or similar for electrons photoexcited at all locations within the photocathode, the energies of the emitted electrons may be more similar (have less variability), and the emittance of the electron beam may be desirably decreased. The photocathode may be formed of a III-V semiconductor such as InGaN or an oxide semiconductor such as GaInO.

An electron emission element (20) includes a first electrode (30a) and a second electrode (40) which are arranged facing each other, an intermediate layer (50) that is provided between the first electrode (30a) and the second electrode (40), and an insulating layer (60) that is formed with a thickness d1 on a substrate (30). A level difference between the insulating layer (60) and the first electrode (30a) is smaller than the thickness d1 of the insulating layer (60).

An electron emission element (20) includes a first electrode (30a) and a second electrode (40) which are arranged facing each other, an intermediate layer (50) that is provided between the first electrode (30a) and the second electrode (40), and an insulating layer (60) that is formed with a thickness d1 on a substrate (30). A level difference between the insulating layer (60) and the first electrode (30a) is smaller than the thickness d1 of the insulating layer (60).

A novel photocathode employing a conduction band barrier is described. Incorporation of a barrier optimizes a trade-off between photoelectron transport efficiency and photoelectron escape probability. The barrier energy is designed to achieve a net increase in photocathode sensitivity over a specific operational temperature range.

A novel photocathode employing a conduction band barrier is described. Incorporation of a barrier optimizes a trade-off between photoelectron transport efficiency and photoelectron escape probability. The barrier energy is designed to achieve a net increase in photocathode sensitivity over a specific operational temperature range.

The inventive concept relates to an apparatus for aging a field emission device configured to emitting electrons based on an electric field between a first electrode and a second electrode, and an aging method thereof. The apparatus according to an embodiment of an inventive concept includes a voltage generator and a current controller. The voltage generator increases the voltage applied to the first electrode to the target voltage level during the first time. The current controller increases the field emission current for the second time to the target current level and increases the pulse width of the field emission current for the third time to the target pulse width. According to the inventive concept, the performance of a large field emission device may be improved with high efficiency and low cost.

The inventive concept relates to an apparatus for aging a field emission device configured to emitting electrons based on an electric field between a first electrode and a second electrode, and an aging method thereof. The apparatus according to an embodiment of an inventive concept includes a voltage generator and a current controller. The voltage generator increases the voltage applied to the first electrode to the target voltage level during the first time. The current controller increases the field emission current for the second time to the target current level and increases the pulse width of the field emission current for the third time to the target pulse width. According to the inventive concept, the performance of a large field emission device may be improved with high efficiency and low cost.

A cathode assembly for emitting charged particles, used in for example an electron gun as source for generating an electron beam is provided. The cathode assembly has a cathode including an emitting member and a carrier. The emitting member is mounted in the carrier, and the carrier is electrically connected to a holder. The cathode is heated by irradiation from an external source, whereby the emitting member emits charged particles from an emitting surface at an emitting temperature. The connection between the carrier and the holder provides a thermal barrier for reducing the amount of thermal energy transferred from the cathode to the holder.

A cathode assembly for emitting charged particles, used in for example an electron gun as source for generating an electron beam is provided. The cathode assembly has a cathode including an emitting member and a carrier. The emitting member is mounted in the carrier, and the carrier is electrically connected to a holder. The cathode is heated by irradiation from an external source, whereby the emitting member emits charged particles from an emitting surface at an emitting temperature. The connection between the carrier and the holder provides a thermal barrier for reducing the amount of thermal energy transferred from the cathode to the holder.

Electron beam generator comprising an electron emitting device adapted to emit an electron beam when heated to an elevated temperature, wherein the electron emitting device comprises a filament having a spiral portion.