Apparatuses and methods for charged-particle detection may include a deflector system configured to direct charged-particle pulses, a detector having a detection element configured to detect the charged-particle pulses, and a controller having a circuitry configured to control the deflector system to direct a first and second charged-particle pulses to the detection element; obtain first and second timestamps associated with when the first charged-particle pulse is directed by the deflector system and detected by the detection element, respectively, and third and fourth timestamps associated with when the second charged-particle pulse is directed by the deflector system and detected by the detection element, respectively; and identify a first and second exiting beams based on the first and second timestamps, and the third and fourth timestamps, respectively.

A method for scanning a sample by a charged particle beam tool is provided. The method includes providing the sample having a scanning area including a plurality of unit areas, scanning a unit area of the plurality of unit areas, blanking a next unit area of the plurality of unit areas adjacent to the scanned unit area, and performing the scanning and the blanking the plurality of unit areas until all of the unit areas are scanned.

A multiple electron beam writing apparatus includes an excitation light source to emit an excitation light, a multi-lens array to divide the excitation light into a plurality of lights, a photoemissive surface to receive the plurality of lights incident through its upper side, and emit multiple photoelectron beams from its back side, a blanking aperture array mechanism to provide, by deflecting each beam of the multiple photoelectron beams, an individual blanking control which individually switches each beam between ON and OFF, an electron optical system to include an electron lens, and to irradiate, using the electron lens, a target object with the multiple photoelectron beams having been controlled to be beam ON, and a control circuit to interconnect, for each shot of the multiple photoelectron beams, a timing of switching the excitation light between emission and non-emission with a timing of switching the each beam between ON and OFF.

Ion implantation systems and methods implant varying energies of an ion beam across a workpiece in a serial single-workpiece end station, where electrodes of an acceleration/deceleration stage, bend electrode and/or energy filter control a final energy or path of the ion beam to the workpiece. The bend electrode or an energy filter can form part of the acceleration/deceleration stage or can be positioned downstream. A scanning apparatus scans the ion beam and/or the workpiece, and a power source provides varied electrical bias signals to the electrodes. A controller selectively varies the electrical bias signals concurrent with the scanning of the ion beam and/or workpiece through the ion beam based on a desired ion beam energy at the workpiece. A waveform generator can provide the variation and synchronize the electrical bias signals supplied to the acceleration/deceleration stage, bend electrode and/or energy filter.

An apparatus may include an exciter, disposed within a resonance chamber, to generate an RF power signal. The apparatus may include a resonator coil, disposed within the resonance chamber, to receive the RF power signal, and generate an RF output signal; and a pickup loop assembly, to receive the RF output signal and output a pickup voltage signal. The pickup loop assembly may include a pickup loop, disposed within the resonance chamber; and a variable attenuator, disposed at least partially between the resonator coil and the pickup loop. The variable attenuator may include a configurable portion, movable from a first position, attenuating a first amount of the RF output signal, to a second position, attenuating a second amount of the RF output signal, different from the first amount.

Method for investigating samples by time-series emission of cathodoluminescence (CL) microscope having electron beam and light sensor. In discovery scan, changes caused by the electron beam are unknown, in an inspection scan changes have already been identified in similar sample. Discovery scan starts by setting parameters of the electron beam to irradiate at a first rate of dose; flushing the buffer of the light sensor; scanning the electron beam over an area of interest on the sample while collecting CL emission with the light sensor, while preventing any reading of the data from the buffer until the entire scanning has been completed; once the entire scanning has been completed, blanking the electron beam and interrogating the buffer to identify a first CL image; and then interrogating the buffer to fetch all remaining CL images and tagging all fetched CL images according to time sequence starting from the first CL image.

Disclosed herein is an apparatus comprising: a source of charged particles configured to emit a beam of charged particles along a primary beam axis of the apparatus; a condenser lens configured to cause the beam to concentrate around the primary beam axis; an aperture; a first multi-pole lens; a second multi-pole lens; wherein the first multi-pole lens is downstream with respect to the condenser lens and upstream with respect to the second multi-pole lens; wherein the second multi-pole lens is downstream with respect to the first multi-pole lens and upstream with respect to the aperture.

The invention relates to a multi-beam pattern definition device for use in a particle-beam processing or inspection apparatus, said device being adapted to be irradiated with a beam of electrically charged particles and allow passage of the beam through a plurality of apertures thus forming a corresponding number of beamlets, said device comprising an aperture array device in which at least two sets of apertures are realized, an opening array device located downstream of the aperture array device having a plurality of openings configured for the passage of beamlets, said opening array device comprises impact regions, wherein charged impinge upon said impact regions.

In one embodiment, a coverage calculating method is for calculating a coverage of a pattern in each of pixel regions obtained by dividing a writing region onto which the pattern is to be written by irradiation with a charged particle beam. Each of the pixel regions has a predetermined size. The method includes generating a plurality of first pixel regions by virtually dividing the writing region, the first pixel regions each having a first size, calculating a coverage of a pattern in the first pixel region, generating a plurality of second pixel regions by virtually dividing the first pixel region, the second pixel regions each having a second size smaller than the first size, selecting a second pixel region approximating a pattern shape in the first pixel region, and calculating a coverage in the selected second pixel region.

The present invention quickly calculates values of optimal excitation parameters which are set in lenses in multiple stages. A multi charged particle beam adjustment method includes forming a multi charged particle beam, calculating, for each of lenses in two or more stages disposed corresponding to object lenses in two or more stages, a first rate of change and a second rate of change in response to change in at least an excitation parameter, the first rate of change being a rate of change in a demagnification level of a beam image of the multi charged particle beam, the second rate of change being a rate of change in a rotation level of the beam image, and calculating a first amount of correction to the excitation parameter of each of the lenses based on an amount of correction to the demagnification level and the rotation level of the beam image, the first rate of change, and the second rate of change.