A vacuum connection mechanism includes: a main body part having a first opening and a first sub opening opened symmetrically in a first direction, and a second opening and a second sub opening opened symmetrically in a second direction; a first bellows connected to the first opening and to the end of which a first flange is provided; a first sub bellows connected to the first sub opening and to the end of which a first blind flange is provided; a first supporting member coupling the first flange and the first blind flange; a second bellows connected to the second opening and to the end of which a second flange is provided; a second sub bellows connected to the second sub opening and to the end of which a second blind flange is provided; and a second supporting member coupling the second flange and the second blind flange.

A sample attachment device includes a mount, a mounted depression, and a pressure release depression. Liquid and air bubbles can pass the pressure release depression. The mounted depression is on the mount. A cartridge is mounted on the mounted depression. The pressure release depression is in the mounted depression. The pressure release depression is vertically under the cartridge when the cartridge is mounted on the mounted depression.

A sample attachment device includes a mount, a mounted depression, and a pressure release depression. Liquid and air bubbles can pass the pressure release depression. The mounted depression is on the mount. A cartridge is mounted on the mounted depression. The pressure release depression is in the mounted depression. The pressure release depression is vertically under the cartridge when the cartridge is mounted on the mounted depression.

A high-frequency power circuit includes a first antenna circuit and a second antenna circuit that are connected in parallel to a matching box connected to a high-frequency power supply. The first antenna circuit include a first antenna, a first distribution capacitor, and a first variable capacitor. The second antenna circuit includes a second antenna, a second distribution capacitor, and a second variable capacitor. A controller sets a capacitance of the first variable capacitor based on a detection result of a phase difference between current and voltage in a series-connected portion of the first antenna and the first variable capacitor during plasma production to reduce this phase difference and sets a capacitance of the second variable capacitor based on a detection result of a phase difference between current and voltage in a series-connected portion of the second antenna and the second variable capacitor during plasma production to reduce this phase difference.

A high-frequency power circuit includes a first antenna circuit and a second antenna circuit that are connected in parallel to a matching box connected to a high-frequency power supply. The first antenna circuit include a first antenna, a first distribution capacitor, and a first variable capacitor. The second antenna circuit includes a second antenna, a second distribution capacitor, and a second variable capacitor. A controller sets a capacitance of the first variable capacitor based on a detection result of a phase difference between current and voltage in a series-connected portion of the first antenna and the first variable capacitor during plasma production to reduce this phase difference and sets a capacitance of the second variable capacitor based on a detection result of a phase difference between current and voltage in a series-connected portion of the second antenna and the second variable capacitor during plasma production to reduce this phase difference.

The ion beam irradiation apparatus 10 includes a vacuum vessel 18 having an internal space R where the ion beam IB taken out from the ion source 11 pass in the first direction D1. The vacuum vessel 18 has a recess 22 that brings the internal space R extended in a second direction D2 intersecting the first direction D1 in a portion of the area between the ion source 11 and the mass spectrometer 14.

An apparatus for plasma processing that performs an etching on a workpiece, includes: a container; a gas supply system for supplying a processing gas into the container; a plasma source for exciting the processing gas; a support for holding the workpiece inside the container; an exhaust system for exhausting an internal space of the container; electrode plates provided on an inner wall of the container; insulators for electrically insulating the electrode plates from each other; a DC power supply for independently applying a DC voltage to each of the electrode plates; and a controller for controlling the gas supply system, the plasma source, and the DC power supply. The controller controls the gas supply system, the plasma source, and the DC power supply such that the DC voltage is supplied to each electrode plate during execution of the etching or after completion of the etching.

An apparatus for plasma processing that performs an etching on a workpiece, includes: a container; a gas supply system for supplying a processing gas into the container; a plasma source for exciting the processing gas; a support for holding the workpiece inside the container; an exhaust system for exhausting an internal space of the container; electrode plates provided on an inner wall of the container; insulators for electrically insulating the electrode plates from each other; a DC power supply for independently applying a DC voltage to each of the electrode plates; and a controller for controlling the gas supply system, the plasma source, and the DC power supply. The controller controls the gas supply system, the plasma source, and the DC power supply such that the DC voltage is supplied to each electrode plate during execution of the etching or after completion of the etching.

A plasma processing apparatus includes a container; a stage disposed in the container and including an electrode; a plasma source that generates plasma in the container; a bias power supply that periodically supplies a pulsed negative DC voltage to the electrode; an edge ring disposed to surround a substrate placed on the stage; and a DC power supply that supplies a DC voltage to the edge ring. The DC power supply supplies a first DC voltage in a first time period when the pulsed negative DC voltage is not supplied to the electrode, and supplies a second DC voltage in a second time period when the pulsed negative DC voltage is supplied to the electrode.

A plasma processing apparatus includes a container; a stage disposed in the container and including an electrode; a plasma source that generates plasma in the container; a bias power supply that periodically supplies a pulsed negative DC voltage to the electrode; an edge ring disposed to surround a substrate placed on the stage; and a DC power supply that supplies a DC voltage to the edge ring. The DC power supply supplies a first DC voltage in a first time period when the pulsed negative DC voltage is not supplied to the electrode, and supplies a second DC voltage in a second time period when the pulsed negative DC voltage is supplied to the electrode.