Provided are a vibration-suppressing mechanism that has excellent maintainability and can effectively control vibration of a column, and a charged particle beam device using the same. This charged particle beam device comprises: a sample chamber for accommodating a sample that will serve as an object to be observed therein; a column that is disposed on an upper portion of the sample chamber and irradiates and scans the sample with a charged particle beam generated by a charged particle source; and a vibration-suppressing mechanism that is removably provided to the column, said particle beam device being characterized in that the vibration-suppressing mechanism includes a stator affixed to the column, an annular mover that is supported so as to be movable in a direction orthogonal to the axial direction of the column, a plurality of actuators that cause the mover to vibrate in the direction orthogonal to the axial direction of the column, a plurality of vibration sensors affixed to the stator, and a controller that controls the actuators according to output signals from the vibration sensors.

A high-frequency power circuit includes a first antenna circuit and a second antenna circuit that are connected in parallel to a matching box connected to a high-frequency power supply. The first antenna circuit include a first antenna, a first distribution capacitor, and a first variable capacitor. The second antenna circuit includes a second antenna, a second distribution capacitor, and a second variable capacitor. A controller sets a capacitance of the first variable capacitor based on a detection result of a phase difference between current and voltage in a series-connected portion of the first antenna and the first variable capacitor during plasma production to reduce this phase difference and sets a capacitance of the second variable capacitor based on a detection result of a phase difference between current and voltage in a series-connected portion of the second antenna and the second variable capacitor during plasma production to reduce this phase difference.

A high-frequency power circuit includes a first antenna circuit and a second antenna circuit that are connected in parallel to a matching box connected to a high-frequency power supply. The first antenna circuit include a first antenna, a first distribution capacitor, and a first variable capacitor. The second antenna circuit includes a second antenna, a second distribution capacitor, and a second variable capacitor. A controller sets a capacitance of the first variable capacitor based on a detection result of a phase difference between current and voltage in a series-connected portion of the first antenna and the first variable capacitor during plasma production to reduce this phase difference and sets a capacitance of the second variable capacitor based on a detection result of a phase difference between current and voltage in a series-connected portion of the second antenna and the second variable capacitor during plasma production to reduce this phase difference.

A vibration damping system for a charged particle beam apparatus according to the present invention includes a column through which a charged particle beam passes, a vibration detection unit that detects vibration of the column, a damping mechanism that applies vibration to the column to suppress the vibration of the column, and a control device that controls the damping mechanism. The control device includes a damping gain control unit that amplifies a detection signal of the vibration detection unit with a set amplification factor and outputs an amplified detection signal as a control signal to the damping mechanism, and a saturation suppression unit that adjusts a feedback gain value of the damping gain control unit according to a detection signal of the vibration detection unit, a signal of the damping mechanism, and a maximum output value and a minimum output value of the damping mechanism.

The invention relates to a microwave driven plasma ion source (1) for ionising a sample to be ionised to sample ions, the microwave driven plasma ion source (1) including a sample intake (6) for inserting the sample from an outside of the microwave driven plasma ion source (1) into an inside (3) of the microwave driven plasma ion source (1); a microwave generator (10) for generating microwaves for generating a plasma (101) from a plasma gas (100); a plasma torch (20) providing a plasma torch orientation direction (29) having an inside (21) for housing (2) a process of generation of the plasma (101) from the plasma gas (100) and for housing a process of ionising the sample to the sample ions by exposing the sample to the plasma (101), wherein the plasma torch (20) comprises a torch outlet (22) for letting out the plasma (101) and the sample ions from the inside (21) of the plasma torch (20) essentially in the plasma torch orientation direction (29) to an outside of the plasma torch (20), the torch outlet (22) having a torch aperture. Furthermore the microwave driven plasma ion source (1, 201) includes a shielding (4) for shielding off the microwaves from passing from the inside (3) of the microwave driven plasma ion source (1) to the outside of the microwave driven plasma ion source (1), wherein the shielding (4) comprises a shielding outlet (5) for letting out the plasma (101) and the sample ions from the inside (3) of the microwave driven plasma ion source (1) essentially in the plasma torch orientation direction (29) to the outside of the microwave driven plasma ion source (1), the shielding outlet (5) having a shielding aperture. Thereby, the shielding outlet (5) is fluidly coupled to the torch outlet (22) for letting out the plasma (101) and the sample ions from the inside (21) of the plasma torch (20) essentially in the plasma torch orientation direction (29) to the outside of the microwave driven plasma ion source (1), wherein a size of the shielding aperture is less than 150%, preferably less than 125%, particular preferably less than 110% of a size of the torch aperture, wherein both the size of the shielding aperture and the size of the torch aperture are measured in units of area.

A plasma processing apparatus includes: a processing container; an electrode that places a workpiece thereon; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies a bias power to the electrode; an edge ring disposed at a periphery of the workpiece; a DC power supply that supplies a DC voltage to the edge ring; a controller that executes a first control procedure in which the DC voltage periodically repeats a first state having a first voltage value and a second state having a second voltage value, the first voltage value is supplied in a partial time period within each period of a potential of the electrode, and the second voltage value is supplied such that the first and second states are continuous.

A plasma processing apparatus includes: a processing container; an electrode that places a workpiece thereon; a plasma generation source that supplies plasma into the processing container; a bias power supply that supplies a bias power to the electrode; an edge ring disposed at a periphery of the workpiece; a DC power supply that supplies a DC voltage to the edge ring; a controller that executes a first control procedure in which the DC voltage periodically repeats a first state having a first voltage value and a second state having a second voltage value, the first voltage value is supplied in a partial time period within each period of a potential of the electrode, and the second voltage value is supplied such that the first and second states are continuous.

Methods and apparatus are disclosed for providing an X-ray shield within an ultra-high vacuum enclosure. A shell is fabricated, leak-tested, filled with an X-ray shielding material, and sealed. An elongated twisted X-ray shield can be deployed within a pump-out channel of an electron microscope or similar equipment. The shield can incorporate lead within a stainless steel shell, with optional low-Z cladding outside the shell. Further variations are disclosed.

An apparatus includes an ion chamber and a valve assembly. The ion chamber may include a housing enclosing a gas and one or more electrodes. The valve assembly is coupled to the ion chamber allowing control of replacement of the gas within the housing.

An apparatus includes an ion chamber and a valve assembly. The ion chamber may include a housing enclosing a gas and one or more electrodes. The valve assembly is coupled to the ion chamber allowing control of replacement of the gas within the housing.