An electron microscope includes a stage on which a sample is capable of being placed, a beam generator, a detector, a display, and a controller. The beam generator emits a charged particle beam with which the sample is irradiated. The detector detects a secondary electron or an electron generated from the sample by irradiation with the charged particle beam. The display displays an image of the sample based on a signal from the detector. The controller executes a first irradiation process of specifying a position of a hole bottom by scanning the sample with the charged particle beam when capturing an image of the hole bottom of a hole provided in the sample, and executes a second irradiation process of imaging a shape of the hole bottom by irradiating the hole bottom with the charged particle beam via the hole.

An electron microscope includes a stage on which a sample is capable of being placed, a beam generator, a detector, a display, and a controller. The beam generator emits a charged particle beam with which the sample is irradiated. The detector detects a secondary electron or an electron generated from the sample by irradiation with the charged particle beam. The display displays an image of the sample based on a signal from the detector. The controller executes a first irradiation process of specifying a position of a hole bottom by scanning the sample with the charged particle beam when capturing an image of the hole bottom of a hole provided in the sample, and executes a second irradiation process of imaging a shape of the hole bottom by irradiating the hole bottom with the charged particle beam via the hole.

An electron beam detection apparatus for a semiconductor device and an electron beam detection assembly are disclosed, the electron beam detection apparatus including a stage, which is configured to carry and hold the semiconductor device at a top surface of the stage, and is translatable in two directions orthogonal to each other, an aiming device, configured to determine a position of the semiconductor device in a coordinate system of the electron beam detection apparatus by capturing an image of the semiconductor device, the aiming device provided with a first field of view and a first optical axis, and an electron beam detection device, configured to detect an emergent electron beam exiting the semiconductor device by projecting an electron beam to the semiconductor device, the electron beam detection device provided with a second field of view and a second optical axis which is not consistent with the first optical axis.

Provided is an electron microscope for generating a montage image by acquiring images of a plurality of regions in a montage image capturing region set on a specimen, and by connecting the acquired images. The electron microscope includes a specimen surface height calculating unit that calculates a distribution of specimen surface heights in the montage image capturing region by performing curved surface approximation based on the specimen surface heights determined by performing focus adjustment at a plurality of points set in a region including the montage image capturing region, and an image acquiring unit that acquires the images of the plurality of regions based on the calculated distribution of the specimen surface heights.

Method and system for generating a diffraction image comprises acquiring multiple frames from a direct-detection detector responsive to irradiating a sample with an electron beam. Multiple diffraction peaks in the multiple frames are identified. A first dose rate of at least one diffraction peak in the identified diffraction peaks is estimated in the counting mode. If the first dose rate is not greater than a threshold dose rate, a diffraction image including the diffraction peak is generated by counting electron detection events. Values of pixels belonging to the diffraction peak are determined with a first set of counting parameter values corresponding to a first coincidence area. Values of pixels not belonging to any of the multiple diffraction peaks are determined using a second, set of counting parameter values corresponding to a second, different, coincidence area.

A method for electron microscopy comprises: adjusting at least one of an electron beam and an image beam in such a way that off-axial aberrations inflicted on at least one of the electron beam and the image beam are minimized, the adjusting performed by using a beam adjusting component to obtain at least one modified image beam, wherein the adjusting comprises applying both shifting and tilting to at least one of the electron beam and the image beam and wherein the amount of tilting of at least one of the electron beam and the image beam depends on the amount of shifting of at least one of the electron beam and the image beam respectively and wherein the amount of tilting is computed based on at least one of coma and astigmatism introduced as a consequence of the shift.

There is provided an ion implanter including a beamline unit that transports an ion beam, an implantation processing chamber in which an implantation process of irradiating a wafer with an ion beam is performed, an illumination device that performs irradiation with illumination light in a direction intersecting with a transport direction of the ion beam in at least one of the beamline unit and the implantation processing chamber, an imaging device that generates a captured image captured by imaging a space through which the illumination light passes, and a control device that detects a particle which scatters the illumination light, based on the captured image.

A state detection device includes at least one chuck pin for holding a substrate, a photographing unit configured to photograph the chuck pin, and set at least one image to be obtained as a target image, a matching coordinate calculation unit configured to perform matching processing between the target image and a reference image which is at least one image showing the chuck pin, and calculate matching coordinates, which are coordinates indicating a position of the reference image in the target image when a matching score between the reference image and the target image is the highest, and a detection unit configured to detect an open/closed state of the chuck pin based on the matching coordinates. Therefore, the open/closed state of the chuck pin can be detected while detection accuracy is suppressed from lowering.

An observation apparatus and method that avoids drawbacks of a Lorentz method and observes a weak scatterer or a phase object with in-focus, high resolution, and no azimuth dependency, by a Foucault method observation using a hollow-cone illumination that orbits and illuminates an incident electron beam having a predetermined inclination angle, an electron wave is converged at a position (height) of an aperture plate downstream of a sample, and a bright field condition in which a direct transmitted electron wave of the sample passes through the aperture plate, a dark field condition in which the transmitted electron wave is shielded, and a Schlieren condition in which approximately half of the transmitted wave is shielded as a boundary condition of both of the above conditions are controlled, and a spatial resolution of the observation image is controlled by selecting multiple diameters and shapes of the opening of the aperture plate.

Provided is a charged particle beam device capable of improving the accuracy of measurement and processing. The charged particle beam device includes an electrostatic chuck that adsorbs an inspection object, a voltage generation unit that generates a voltage to be supplied to the electrostatic chuck, and a state determination unit that determines a state of the inspection object. Here, the state determination unit includes a current waveform simulation unit that simulates a time-series change of an electrostatic chuck current flowing through the voltage generation unit when the electrostatic chuck normally adsorbs the inspection object, a difference integration unit that acquires an integration value of a difference between a time-series change of a simulation current generated by the current waveform simulation unit and the time-series change of the electrostatic chuck current flowing through the voltage generation unit, and a difference determination unit that determines an adsorption state of the inspection object and a shape feature of the inspection object based on the integration value of the difference.