Method and system for generating a diffraction image comprises acquiring multiple frames from a direct-detection detector responsive to irradiating a sample with an electron beam. Multiple diffraction peaks in the multiple frames are identified. A first dose rate of at least one diffraction peak in the identified diffraction peaks is estimated in the counting mode. If the first dose rate is not greater than a threshold dose rate, a diffraction image including the diffraction peak is generated by counting electron detection events. Values of pixels belonging to the diffraction peak are determined with a first set of counting parameter values corresponding to a first coincidence area. Values of pixels not belonging to any of the multiple diffraction peaks are determined using a second, set of counting parameter values corresponding to a second, different, coincidence area.

Disclosed herein are methods, apparatuses, systems, and computer-readable media related to defective pixel management in charged particle microscopy. For example, in some embodiments, a charged particle microscope support apparatus may include: first logic to identify a defective pixel region of a charged particle camera, wherein the charged particle camera cannot detect charged particle events in the defective pixel region; second logic to generate a first charged particle event indicator that identifies a first time and a first location of a first charged particle event outside the defective pixel region, wherein the first charged particle event is detected by the charged particle camera; third logic to generate a second charged particle event indicator that identifies a second time and a second location in the defective pixel region; and fourth logic to output data representative of the charged particle event indicators.

A scanning electron microscopy system that includes a primary electron beam radiation unit configured to irradiate a first pattern of a substrate having a second pattern formed in a peripheral region of the first pattern, a detection unit configured to detect back scattered electrons emitted from the substrate, an image generation unit configured to generate an electron beam image corresponding to a strength of the back scattered electrons, a designating unit configured to designate a depth measurement region in which the first pattern exists on the electron beam image, and a processing unit configured to obtain an image signal of the depth measurement region and a pattern density in the peripheral region where the second pattern exists, and to estimate a depth of the first pattern based on the obtained image signal of the depth measurement region and the pattern density in the peripheral region.

The invention provides a charged particle beam device that can accurately move a convergence point of a charged particle beam to a surface of a sample and facilitates a user to grasp a positional relation between the surface of the sample and the convergence point of the charged particle beam. The charged particle beam device according to the invention includes: an electron optics system configured to irradiate a sample table with a charged particle beam; a movable stage on which the sample table is to be placed; a sample chamber that accommodates the movable stage; a detector configured to detect a signal from a sample placed on the sample table; a camera configured to capture an image of the sample table and the sample; an extraction means configured to extract outer shape information relating to outer shapes of the sample table and the sample from the image captured by the camera; a control unit configured to control the movable stage based on the outer shape information; and a display unit configured to display an image relating to the outer shape information together with the image captured by the camera.

The invention provides a charged particle beam device that can accurately move a convergence point of a charged particle beam to a surface of a sample and facilitates a user to grasp a positional relation between the surface of the sample and the convergence point of the charged particle beam. The charged particle beam device according to the invention includes: an electron optics system configured to irradiate a sample table with a charged particle beam; a movable stage on which the sample table is to be placed; a sample chamber that accommodates the movable stage; a detector configured to detect a signal from a sample placed on the sample table; a camera configured to capture an image of the sample table and the sample; an extraction means configured to extract outer shape information relating to outer shapes of the sample table and the sample from the image captured by the camera; a control unit configured to control the movable stage based on the outer shape information; and a display unit configured to display an image relating to the outer shape information together with the image captured by the camera.

A scanning transmission electron microscope that scans a specimen with an electron probe to acquire an image. The scanning transmission electron microscope includes: an optical system which includes a condenser lens and an objective lens; an imaging device which is arranged on a back focal plane or a plane conjugate to the back focal plane of the objective lens and which is capable of photographing a Ronchigram; and a control unit which performs adjustment of the optical system. The control unit is configured or programed to: acquire an image of a change in a Ronchigram that is attributable to a change in a relative positional relationship between the specimen and the electron probe; and determine a center of the Ronchigram based on the image of the change in the Ronchigram.

Disclosed herein are apparatuses, systems, methods, and computer-readable media relating to area selection in charged particle microscope (CPM) imaging. For example, in some embodiments, a CPM support apparatus may include: first logic to generate a first data set associated with an area of a specimen by processing data from a first imaging round of the area by a CPM; second logic to generate predicted parameters of the area; and third logic to determine whether a second imaging round of the area is to be performed by the CPM based on the predicted parameters of the area; wherein the first logic is to, in response to a determination by the third logic that a second imaging round of the area is to be performed, generate a second data set, including measured parameters, associated with the area by processing data from a second imaging round of the area by the CPM.

In an embodiment, a method includes: placing a wafer on an implanter platen, the wafer including alignment marks; measuring a position of the wafer by measuring positions of the alignment marks with one or more cameras; determining an angular displacement between the position of the wafer and a reference position of the wafer; and rotating the implanter platen by the angular displacement.

In an embodiment, a method includes: placing a wafer on an implanter platen, the wafer including alignment marks; measuring a position of the wafer by measuring positions of the alignment marks with one or more cameras; determining an angular displacement between the position of the wafer and a reference position of the wafer; and rotating the implanter platen by the angular displacement.

In an embodiment, a method includes: placing a wafer on an implanter platen, the wafer including integrated circuit dies; measuring a position of the wafer by measuring a positions of an outer edge of the integrated circuit dies with a camera; determining an angular displacement between the position of the wafer and a reference position of the wafer; and rotating the implanter platen by the angular displacement.