An optical height detection system in a charged particle beam inspection system. The optical height detection system includes a projection unit including a modulated illumination source, a projection grating mask including a projection grating pattern, and a projection optical unit for projecting the projection grating pattern to a sample; and a detection unit including a first detection grating mask including a first detection grating pattern, a second detection grating mask including a second detection grating pattern, and a detection optical system for forming a first grating image from the projection grating pattern onto the first detection grating mask and forming a second grating image from the projection grating pattern onto the second detection grating masks. The first and second detection grating patterns at least partially overlap the first and second grating images, respectively.

The invention relates to a method of examining a sample using a charged particle microscope, comprising the steps of providing a charged particle beam, as well as a sample, and scanning said charged particle beam over said sample. A first detector is used for detecting emissions of a first type from the sample in response to the beam scanned over the sample. Using spectral information of detected emissions of the first type, a plurality of mutually different phases are assigned to said sample. An image representation of said sample is provided, wherein said image representation contains different color hues. The color hues are selected from a pre-selected range of consecutive color hues in such a way that the selected color hues comprise mutually corresponding intervals within said pre-selected range of consecutive color hues.

In one embodiment, a method includes generating a model trained to predict a low-probability stochastic defect, using the model to predict the low-probability stochastic defect, determining a process window based on the low-probability stochastic defect, and controlling, based on the process window, a lithography tool to manufacture a device.

In an electron beam device provided with two columns including an irradiation optical system and an imaging optical system, a photoelectron image for use in adjusting the irradiation optical system is made sharper. The electron beam device includes: an irradiation optical system which irradiates a sample placed on a stage with an electron beam; a light irradiation unit 50 which irradiates the sample with light containing ultraviolet rays; a sample voltage control unit 44 which applies a negative voltage to the sample so that, before the electron beam reaches the sample, the electron orbit inverts; and an imaging optical system which acquires a mirror electron image by forming an image of mirror electrons reflected by application of the negative voltage. In the electron beam device, the imaging optical system includes a sensor 32 which obtains a mirror electron image and a stray light suppression part 27 which is provided between the sensor and the stage 31 and which suppresses reaching the sensor of the light emitted from the light irradiation unit.

In an electron beam device provided with two columns including an irradiation optical system and an imaging optical system, a photoelectron image for use in adjusting the irradiation optical system is made sharper. The electron beam device includes: an irradiation optical system which irradiates a sample placed on a stage with an electron beam; a light irradiation unit 50 which irradiates the sample with light containing ultraviolet rays; a sample voltage control unit 44 which applies a negative voltage to the sample so that, before the electron beam reaches the sample, the electron orbit inverts; and an imaging optical system which acquires a mirror electron image by forming an image of mirror electrons reflected by application of the negative voltage. In the electron beam device, the imaging optical system includes a sensor 32 which obtains a mirror electron image and a stray light suppression part 27 which is provided between the sensor and the stage 31 and which suppresses reaching the sensor of the light emitted from the light irradiation unit.

An apparatus for and a method of inspecting a substrate in which a charged particle beam is arranged to impinge on a portion of the substrate and a first light beam having a first wavelength and a second light beam having a second wavelength different from the first wavelength are also arranged to impinge on the portion of the substrate.

A method for positioning a movable object in a sample chamber of a particle beam microscope is carried out with the aid of a flexible particle beam barrier. The particle beam microscope comprises at least one particle beam column for producing a beam of charged particles, and a sample chamber, a detector for detecting interaction signals and a control and evaluation unit. In the method, initially an object is provided in the sample chamber. Next, a barrier region is defined, which is subsequently scanned with the beam of charged particles. The interaction signals produced during the scan are detected. The object is moved towards the barrier region, wherein the detected interaction signals are monitored and signal changes are registered, with the result that it is possible to detect when the object moves into the barrier region or leaves the barrier region.

Even if a generated wide-field image includes residual local misalignment, this charged particle microscope device can prompt for user input to correct such local misalignment, and can regenerate, on the basis of the user input, a wide-field image that includes little misalignment even in local areas of the overlap regions thereof. A charged particle microscope according to the present invention captures a plurality of images in such a way that each captured image has overlap regions that are to be overlapped with the overlap regions of captured images adjacent to that captured image, wherein an image processing unit: sets a pair of corresponding points in respective overlap regions of each two adjacent captured images; sets predetermined constraint conditions for each captured image; calculates the amounts of misalignment between the plurality of captured images on the basis of the set pairs of corresponding points and the set constraint conditions; connects the plurality of captured images to one another after correcting the misalignment between these captured images on the basis of the calculated amounts of misalignment, thereby generating a single wide-field image; calculates, for each of a plurality of local areas set in the overlap regions of each two adjacent captured images, a degree of reliability for the connection between these captured images; and notifies a user of either each found low reliability local area or the overlap region including that low reliability local area, as well as the set pairs of corresponding points and the set constraint conditions.

Even if a generated wide-field image includes residual local misalignment, this charged particle microscope device can prompt for user input to correct such local misalignment, and can regenerate, on the basis of the user input, a wide-field image that includes little misalignment even in local areas of the overlap regions thereof. A charged particle microscope according to the present invention captures a plurality of images in such a way that each captured image has overlap regions that are to be overlapped with the overlap regions of captured images adjacent to that captured image, wherein an image processing unit: sets a pair of corresponding points in respective overlap regions of each two adjacent captured images; sets predetermined constraint conditions for each captured image; calculates the amounts of misalignment between the plurality of captured images on the basis of the set pairs of corresponding points and the set constraint conditions; connects the plurality of captured images to one another after correcting the misalignment between these captured images on the basis of the calculated amounts of misalignment, thereby generating a single wide-field image; calculates, for each of a plurality of local areas set in the overlap regions of each two adjacent captured images, a degree of reliability for the connection between these captured images; and notifies a user of either each found low reliability local area or the overlap region including that low reliability local area, as well as the set pairs of corresponding points and the set constraint conditions.

A detection and correction method for an electron beam system are provided. The method includes emitting an electron beam towards a specimen; modulating a beam current of the electron beam to obtain a beam signal. The method further includes detecting, using an electron detector, secondary and/or backscattered electrons emitted by the specimen to obtain electron data, wherein the electron data defines a detection signal. The method further includes determining, using a processor, a phase shift between the beam signal and the detection signal. The method further includes filtering, using the processor, the detection signal based on the phase shift.