A method, including using an implant recipe to perform an implant by scanning an ion beam along a first axis over a substrate, coated with a photoresist layer, while the substrate is scanned along a perpendicular axis; measuring an implant current (I) during the implant, using a first detector, positioned to a side of a substrate position; determining a value of a difference ratio (I−B)/(B), based upon the implant current, where B is current measured by the first detector, during a calibration at base pressure; determining a plurality of values of a current ratio (CR) for the plurality of instances, based upon the difference ratio, the current ratio being a ratio of the implant current to a current measured by a second detector, positioned over the substrate position, during the calibration; and adjusting scanning the ion beam, scanning of the substrate, or a combination thereof, based upon the current ratio.

A method, including using an implant recipe to perform an implant by scanning an ion beam along a first axis over a substrate, coated with a photoresist layer, while the substrate is scanned along a perpendicular axis; measuring an implant current (I) during the implant, using a first detector, positioned to a side of a substrate position; determining a value of a difference ratio (I−B)/(B), based upon the implant current, where B is current measured by the first detector, during a calibration at base pressure; determining a plurality of values of a current ratio (CR) for the plurality of instances, based upon the difference ratio, the current ratio being a ratio of the implant current to a current measured by a second detector, positioned over the substrate position, during the calibration; and adjusting scanning the ion beam, scanning of the substrate, or a combination thereof, based upon the current ratio.

System and method for nanoscale X-ray imaging. The imaging system comprises an electron source configured to generate an electron beam along a first direction; an X-ray source comprising a thin film anode configured to receive the electron beam at an electron beam spot on the thin film anode, and to emit an X-ray beam substantially along the first direction from a portion of the thin film anode proximate the electron beam spot, such that the X-ray beam passes through the sample specimen. The imaging apparatus further comprises an X-ray detector configured to receive the X-ray beam that passes through the sample specimen. Some embodiments are directed to an electron source that is an electron column of a scanning electron microscope (SEM) and is configured to focus the electron beam at the electron beam spot.

System and method for nanoscale X-ray imaging. The imaging system comprises an electron source configured to generate an electron beam along a first direction; an X-ray source comprising a thin film anode configured to receive the electron beam at an electron beam spot on the thin film anode, and to emit an X-ray beam substantially along the first direction from a portion of the thin film anode proximate the electron beam spot, such that the X-ray beam passes through the sample specimen. The imaging apparatus further comprises an X-ray detector configured to receive the X-ray beam that passes through the sample specimen. Some embodiments are directed to an electron source that is an electron column of a scanning electron microscope (SEM) and is configured to focus the electron beam at the electron beam spot.

The present invention relates to a hard X-ray photoelectron spectroscopy (HAXPES) system comprising an X-ray source providing a beam of photons which is directed through the system so as to excite electrons from an illuminated sample. An X-ray tube is connected to a monochromator vacuum chamber in which a crystal is configured to monochromatize and focus the beam onto an illuminated sample. A hemispherical electron energy analyser is mounted onto the analysis chamber. An air gap is provided between the X-ray tube and the monochromator chamber, which air gap is provided with a first radiation trap to shield the ambient air from the radiation when the air gap is illuminated with X-rays from the source.

The present invention relates to a hard X-ray photoelectron spectroscopy (HAXPES) system comprising an X-ray source providing a beam of photons which is directed through the system so as to excite electrons from an illuminated sample. An X-ray tube is connected to a monochromator vacuum chamber in which a crystal is configured to monochromatize and focus the beam onto an illuminated sample. A hemispherical electron energy analyser is mounted onto the analysis chamber. An air gap is provided between the X-ray tube and the monochromator chamber, which air gap is provided with a first radiation trap to shield the ambient air from the radiation when the air gap is illuminated with X-rays from the source.

A charged particle beam device includes: a charged particle beam source; an analyzer that analyzes and detects particles including secondary electrons and backscattered charged particles that are emitted from a specimen by irradiating the specimen with a primary charged particle beam emitted from the charged particle beam source; a bias voltage applying unit that applies a bias voltage to the specimen; and an analysis unit that extracts a signal component of the secondary electrons based on a first spectrum obtained by detecting the particles with the analyzer in a state where a first bias voltage is applied to the specimen, and a second spectrum obtained by detecting the particles with the analyzer in a state where a second bias voltage different from the first bias voltage is applied to the specimen.

A detector for Kikuchi diffraction comprising a detector body and a detector head mountable to each other. The detector body comprises a body part which is enclosing a photodetector configured for detecting incident radiation and further comprises a vacuum window arranged upstream the photodetector with respect to a propagation direction of the incident radiation, a first body mounting portion configured to be mounted to a SEM chamber port and a second body mounting portion. The detector head comprises a scintillation screen and a head mounting portion configured to be mounted to the second body mounting portion.

The invention relates to a dry free-flowing composite of a sub-micron polymer binder particles and interactive materials, and articles formed therefrom. The polymer particles are formed from a dilute latex polymer and blended with interactive materials, then the blend is spray-dried, to form a dry blend in which less than 10% of all polymer particles are in an agglomerated form. The polymer is preferably a polyvinylidene fluoride, such as Kyblock PVDF from Arkema. The dry blend will be used to form articles and coatings by many means, for example forming a three dimensional article by heat and pressure, it can be redispersed into an aqueous coating composition, or can be electro-coated onto a substrate.

The invention relates to a method of examining a sample using a charged particle microscope, comprising the steps of providing a charged particle beam, as well as a sample; scanning said charged particle beam over said sample at a plurality of sample locations; and detecting, using a first detector, emissions of a first type from the sample in response to the beam scanned over the plurality of sample locations. Spectral information of detected emissions of the first type is used to assign a plurality of mutually different phases to said sample at said plurality of sample locations. Information relating to at least one previously assigned phase and its respective sample location is used for establishing an estimated phase for at least one other of the plurality of sample locations. Said estimated phase is assigned to said other sample location. A control unit is used to provide a data representation of said sample containing at least information on said plurality of sample locations and said phases.