An ion source can include a magnetic field generator configured to generate a magnetic field in a direction parallel to a direction of the electron beam and coincident with the electron beam. However, this magnetic field can also influence the path of ionized sample constituents as they pass through and exit the ion source. An ion source can include an electric field generator to compensate for this effect. As an example, the electric field generator can be configured to generate an electric field within the ion source chamber, such that an additional force is imparted on the ionized sample constituents, opposite in direction and substantially equal in magnitude to the force imparted on the ionized sample constituents by the magnetic field.

Provided is a method of evaluating carbon concentration of a silicon sample, which includes: forming an oxide film on at least a part of a surface of an evaluation-target silicon sample; irradiating a particle beam onto a surface of the oxide film; irradiating excitation light having energy larger than a band gap of silicon onto the surface of the oxide film, onto which the particle beam has been irradiated; measuring intensity of photoluminescence emitted from the evaluation-target silicon sample irradiated with the excitation and evaluating carbon concentration of the evaluation-target silicon sample on the basis of the measured intensity of photoluminescence, wherein the photoluminescence is band-edge luminescence of silicon.

A beam position monitor is provided, for measuring a position of a beam of charged particles passing through a chamber, the beam position monitor including a first magnetic field sensor and a second magnetic field sensor configured to be installed in the chamber on either side of the beam of charged particles, each magnetic field sensor including a conductive loop, the conductive loop of the first magnetic field sensor and the conductive loop of the second magnetic field sensor being configured to have inductances different from one another. A measurement system and a particle accelerator are also provided.

In one embodiment, a multi-charged-particle-beam writing apparatus includes a shaping aperture array plate including a plurality of first apertures through which a charged particle beam passes to form multiple beams, a movable stage on which a writing target substrate is placed, an inspection aperture plate disposed on the stage, the inspection aperture plate including a second aperture through which one of the multiple beams passes, a current detector detecting a current of the beam that has passed through the second aperture of the inspection aperture plate, a deflector deflecting the multiple beams, the deflector controlling deflection of one of the multiple beams such that the one beam is located at a predetermined position in a region including the second aperture and a surrounding region of the second aperture, and a calculator obtaining a beam position based on the beam current detected by the current detector.

An ion source includes a plasma chamber, and a suppression electrode disposed downstream of the plasma chamber, and is operable to irradiate the suppression electrode with an ion beam produced from a cleaning gas to clean the suppression electrode. Prior to cleaning, the ion source moves the suppression electrode or the plasma chamber in a first direction to increase a distance between the plasma chamber and the suppression electrode.

A device for an MeV-based ion beam analysis of a sample includes a vacuum measurement chamber, having at least one detector and a sample observation unit, a vacuum system for generating a vacuum within the vacuum measurement chamber, and an ion beam tube and a focusing system for focusing an ion beam. The device further includes a sample transfer system, comprising a sample manipulator including a sample holder for receiving at least one sample. The device additionally includes an in-coupling system for the vacuum-tight connection of the ion beam tube to the measurement chamber, which comprises an ion beam vacuum feedthrough, at least one receiver for a detector, a receiver for receiving the sample observation unit, and a receiver for receiving the sample transfer system. The in-coupling system represents a direct mechanical connection between the components that are the ion lens system, detector and sample observation unit.

The present disclosure relates to a method includes generating ions with an ion source of an ion implantation apparatus based on an ion implantation recipe. The method includes accelerating the generated ions based on an ion energy setting in the ion implantation recipe and determining an energy spectrum of the accelerated ions. The method also includes analyzing a relationship between the determined energy spectrum and the ion energy setting. The method further includes adjusting at least one parameter of a final energy magnet (FEM) of the ion implantation apparatus based on the analyzed relationship.

Described are porous protective liners for use in a vacuum chamber, the liners being made of inorganic carbonaceous material and having a porous surface, preferably with the pores being of an open-pore structure.

A standard reference plate is configured for insertion into an additive manufacturing apparatus for calibrating an electron beam of the additive manufacturing apparatus. The standard reference plate includes a lower plate and an upper plate being essentially in parallel and attached spaced apart from each other, the upper plate including a plurality of holes. A predetermined hollow pattern is provided inside the holes, and a spacing between the holes and the size of the holes and a distance between the upper plate and the lower plate and a position of an x-ray sensor of the additive manufacturing apparatus with respect to the standard reference plate are arranged so that x-rays emanating from the lower plate, when the electron beam is passing through a hollow part of the hollow pattern, will not pass directly from the lower plate through any one of the holes to the x-ray sensor.

An ion source can include a magnetic field generator configured to generate a magnetic field in a direction parallel to a direction of the electron beam and coincident with the electron beam. However, this magnetic field can also influence the path of ionized sample constituents as they pass through and exit the ion source. An ion source can include an electric field generator to compensate for this effect. As an example, the electric field generator can be configured to generate an electric field within the ion source chamber, such that an additional force is imparted on the ionized sample constituents, opposite in direction and substantially equal in magnitude to the force imparted on the ionized sample constituents by the magnetic field.