In a writing process in a charged-particle multi-beam apparatus, a desired pattern is written onto a target wherein said desired pattern is provided as input pattern data (INPDAT) in a vector format and processed through a pattern data processing flow. A data preprocessing system receives the input pattern data (INPDAT) and preprocesses the input pattern data independently of the writing process, preferably in advance to it, using writing parameter data provided to the data preprocessing system, and writes the intermediate pattern data (IMDAT) thus obtained to a data storage. When a writing process is carried out using the apparatus, its writing control system reads the intermediate pattern data from the data storage, converts them into pattern streaming data (SBUF), and streams the pattern streaming data to the apparatus for writing the pattern to the target.

In a charged particle beam writing method according to one embodiment, a deflector is caused to deflect a charged particle beam and a pattern is written by irradiating a substrate with the charged particle beam. The charged particle beam writing method includes calculating a charge amount distribution based on a charge amount of a beam irradiation region on the substrate immediately after irradiation with the charged particle beam and a diffusion coefficient for electric charge of the substrate, calculating a position shift distribution of the charged particle beam on the substrate based on the charge amount distribution, and correcting an irradiation position of the charged particle beam based on the position shift distribution.

An automatic adjustment method and an automatic adjustment device of a beam of a semiconductor apparatus, and a training method of a parameter adjustment model are provided. The automatic adjustment method of the beam of the semiconductor apparatus includes the following steps. The semiconductor apparatus generates the beam. A wave curve of the beam is obtained. The wave curve is segmented into several sections. The slope of each of the sections is obtained. Several environmental factors of the semiconductor apparatus are obtained. According to the slopes and the environmental factors, at least one parameter adjustment command of the semiconductor apparatus is analyzed through the parameter adjustment model.

A multi-charged particle beam writing apparatus according to one aspect of the present invention includes a region setting unit configured to set, as an irradiation region for a beam array to be used, the region of the central portion of an irradiation region for all of multiple beams of charged particle beams implemented to be emittable by a multiple beam irradiation mechanism, and a writing mechanism, including the multiple beam irradiation mechanism, configured to write a pattern on a target object with the beam array in the region of the central portion having been set in the multiple beams implemented.

Analyzing a sidewall of a hole milled in a sample to determine thickness of a buried layer includes milling the hole in the sample using a charged particle beam of a focused ion beam (FIB) column to expose the buried layer along the sidewall of the hole. After milling, the sidewall of the hole has a known slope angle. From a perspective relative to a surface of the sample, a distance is measured between a first point on the sidewall corresponding to an upper surface of the buried layer and a second point on the sidewall corresponding to a lower surface of the buried layer. The thickness of the buried layer is determined using the known slope angle of the sidewall, the distance, and the angle relative to the surface of the sample.

Analyzing a sidewall of a hole milled in a sample to determine thickness of a buried layer includes milling the hole in the sample using a charged particle beam of a focused ion beam (FIB) column to expose the buried layer along the sidewall of the hole. After milling, the sidewall of the hole has a known slope angle. From a perspective relative to a surface of the sample, a distance is measured between a first point on the sidewall corresponding to an upper surface of the buried layer and a second point on the sidewall corresponding to a lower surface of the buried layer. The thickness of the buried layer is determined using the known slope angle of the sidewall, the distance, and the angle relative to the surface of the sample.

A method for making a semiconductor memory device comprising a plurality of memory cells for storing one or more data values, the method comprising: exposing a pattern on a wafer for creating structures for a plurality of memory cells for the semiconductor memory device, wherein the pattern is exposed by means of one or more charged particle beams; and varying an exposure dose of the one or more charged particle beams during exposure of the pattern to generate a set of one or more non-common features in one or more structures of at least one of the memory cells, so that the structures of the at least one memory cell differ from the corresponding structures of other memory cells of the semiconductor memory device.

A method for making a semiconductor memory device comprising a plurality of memory cells for storing one or more data values, the method comprising; exposing a pattern on a wafer for creating structures for a plurality of memory cells for the semiconductor memory device, wherein the pattern is exposed by means of one or more charged particle beams; and varying an exposure dose of the one or more charged particle beams during exposure of the pattern to generate a set of one or more non-common features in one or more structures of at least one of the memory cells, so that the structures of the at least one memory cell differ from the corresponding structures of other memory cells of the semiconductor memory device.

An amount of charge of a substrate is promptly and accurately calculated. A charged particle beam writing method includes a step (S100) for virtually dividing a writing region of the writing target substrate in a mesh-like manner and calculating a pattern density representing an arrangement ratio of the pattern for each mesh region, a step (S102) for calculating a dose for each mesh region using the pattern density, a step (S104) for calculating a charge amount based on a film thickness of the resist film formed on the substrate and the calculated dose by using a predetermined function for charge amount calculation, the function using, as variables, the film thickness of the resist film and the dose, a step (S106) for calculating a position shift amount of a writing position from the calculated charge amount, and a step (S108) for correcting an irradiation position of the charged particle beam using the position shift amount.

Apparatuses and methods for automated grid validation are disclosed herein. An example method at least includes imaging a grid, the grid including a support portion and a plurality of posts extending from the support portion, wherein each post of the plurality of posts has a designated weld location, and determining, based on the image, whether the designated weld location of each post of the plurality of posts is valid.