A method includes moving a plurality of sensors along a translation path with respect to an ion beam, acquiring sensor signals produced by the plurality of sensors, converting the acquired sensor signals into a data set representative of a two-dimensional (2D) profile of the ion beam, generating a plurality of first one-dimensional (1D) profiles of the ion beam from the data set, generating a plurality of second 1D profiles of the ion beam by spatially inverting each of the plurality of first 1D profiles, generating a plurality of third 1D profiles of the ion beam by superposing first current density values of each of the plurality of first 1D profiles with second current density values of a corresponding one of the plurality of second 1D profiles and determining whether to continue an implantation process with the ion beam in accordance with the plurality of third 1D profiles.

A method of operating a beamline ion implanter may include performing, in an ion implanter, a first implant procedure to implant a dopant of a first polarity into a given semiconductor substrate, and generating an estimated implant dose of the dopant of the first polarity based upon a set of filtered information, generated by the first implant procedure. The method may also include calculating an actual implant dose of the dopant of the first polarity using a predictive model based upon the estimated implant dose, and performing, in the ion implanter, an adjusted second implant procedure to implant a dopant of a second polarity into a select semiconductor substrate, based upon the actual implant dose.

A method of operating a beamline ion implanter may include performing, in an ion implanter, a first implant procedure to implant a dopant of a first polarity into a given semiconductor substrate, and generating an estimated implant dose of the dopant of the first polarity based upon a set of filtered information, generated by the first implant procedure. The method may also include calculating an actual implant dose of the dopant of the first polarity using a predictive model based upon the estimated implant dose, and performing, in the ion implanter, an adjusted second implant procedure to implant a dopant of a second polarity into a select semiconductor substrate, based upon the actual implant dose.

There is provided an ion implanter including a beamline unit that transports an ion beam, an implantation processing chamber in which an implantation process of irradiating a wafer with an ion beam is performed, an illumination device that performs irradiation with illumination light in a direction intersecting with a transport direction of the ion beam in at least one of the beamline unit and the implantation processing chamber, an imaging device that generates a captured image captured by imaging a space through which the illumination light passes, and a control device that detects a particle which scatters the illumination light, based on the captured image.

There is provided an ion implanter including a beamline unit that transports an ion beam, an implantation processing chamber in which an implantation process of irradiating a wafer with an ion beam is performed, an illumination device that performs irradiation with illumination light in a direction intersecting with a transport direction of the ion beam in at least one of the beamline unit and the implantation processing chamber, an imaging device that generates a captured image captured by imaging a space through which the illumination light passes, and a control device that detects a particle which scatters the illumination light, based on the captured image.

A method of performing an ion implantation process using a beam-line ion implanter, including disposing a substrate on a platen, analyzing the substrate using metrology components, communicating data relating to the analysis of the substrate to a feedforward controller, processing the data using a predictive model executed by the feedforward controller to compensate for variations in the substrate and to compensate for variations in components of the beam-line ion implanter based on historical data collected from previous implantation operations, and using output from the predictive model to adjust operational parameters of the beam-line ion implanter.

A method of performing an ion implantation process using a beam-line ion implanter, including disposing a substrate on a platen, analyzing the substrate using metrology components, communicating data relating to the analysis of the substrate to a feedforward controller, processing the data using a predictive model executed by the feedforward controller to compensate for variations in the substrate and to compensate for variations in components of the beam-line ion implanter based on historical data collected from previous implantation operations, and using output from the predictive model to adjust operational parameters of the beam-line ion implanter.

A method of automatic detection of a required peak for sample machining by a focused ion beam uses for a filtration of a measured signal of secondary particles of a discrete wavelet transformation followed by a peak detection, and stops sample machining after the required a number of peaks has been reached.

A method of automatic detection of a required peak for sample machining by a focused ion beam uses for a filtration of a measured signal of secondary particles of a discrete wavelet transformation followed by a peak detection, and stops sample machining after the required a number of peaks has been reached.

A method for detecting radicals in process gases in a semiconductor fabrication assembly is provided where the semiconductor fabrication includes a plasma source and a mass spectrometer with an ion source. The method includes separating ions from the process gases and determining a fixed electron energy in which to measure the process gases. Process gases in the semiconductor fabrication assembly are continuously sampled. A first measurement is performed on the sampled process gases at the electron energy using the mass spectrometer, where the first measurement is performed with the plasma source off. A second measurement of the sampled process gases is performed at the fixed electron energy using the mass spectrometer, where the second measurement is performed with the plasma source on. An amount of a radical present in the sampled process gases is determined as a difference between the second measurement and the first measurement.