A carrier generation source is provided, comprising a carrier generation area configured to provide carriers and a grid electrode, the grid electrode comprising an electrically conductive carrier, the carrier having a first side and a second side opposite the first side, the first side being directly adjacent the carrier generation area, the carrier having a plurality of through-holes extending from the first side through the carrier to the second side, the through-holes on the first side each having a first opening surface and the through-holes on the second side having a second opening surface, the first opening surface being larger than the second opening surface.

This invention pertains to an imaging method, the purpose of which is to reveal, over a wide range, information about a plurality of layers contained in a multilayer structure, or form an image of the revealed applicable layers. The method proposed includes: a step in which, while rotating the sample with the axis of the normal line of the sample surface as the axis of rotation, the sample is irradiated with an ion beam from a direction inclined with respect to the normal line direction, via a mask having an opening which selectively allows the passage of an ion beam and which is disposed at a position distant from the sample, thereby forming a hole with a band-shaped sloped surface that is inclined with respect to the sample surface; and a step in which a first image viewed from a direction intersecting with the sloped surface of the applicable layer is formed, on the basis of a signal obtained by irradiating, with a charged particle beam, the applicable layer contained in the band-shaped sloped surface.

Described are various embodiments of an ion beam chamber fluid delivery system and method for delivering a fluid onto a substrate in an ion beam system during operation. In one embodiment, the system comprises: a chamber comprising an ion beam gun oriented so as to cause ions to impinge the substrate, said chamber having a fluid delivery conduit therein for delivering the fluid into the chamber; a transferable substrate stage for holding the substrate, the transferable stage further configured to move between an operating position and a payload position during non-operation, said payload position for receiving and removing said substrate; and a fluid delivery nozzle being in a fixed location relative to the transferable stage, at least during operation, with an outlet position that is configured to deliver a fluid to a predetermined location on said transferable stage.

The present disclosure relates to dual beam device and three-dimensional circuit pattern inspection techniques by cross sectioning of inspection volumes with large depth extension exceeding 1 μm below the surface of a semiconductor wafer, as well as methods, computer program products and apparatuses for generating 3D volume image data of a deep inspection volume inside a wafer without removal of a sample from the wafer. The disclosure further relates to 3D volume image generation and cross section image alignment methods utilizing a dual beam device for three-dimensional circuit pattern inspection.

A specimen machining device for machining a specimen by irradiating the specimen with an ion beam includes an ion source for irradiating the specimen with the ion beam, a shielding member disposed on the specimen to block the ion beam, a specimen stage for holding the specimen, a camera for photographing the specimen, a coaxial illumination device for irradiating the specimen with illumination light along an optical axis of the camera, and a processing unit for determining whether to terminate the machining based on an image photographed by the camera. The processing unit performs processing for acquiring information indicating a target machined width, processing for acquiring the image, processing for measuring a machined width on the acquired image, and processing for terminating the machining when the measured machined width equals or exceeds the target machined width.

A specimen machining device for machining a specimen by irradiating the specimen with an ion beam includes an ion source for irradiating the specimen with the ion beam, a shielding member disposed on the specimen to block the ion beam, a specimen stage for holding the specimen, a camera for photographing the specimen, a coaxial illumination device for irradiating the specimen with illumination light along an optical axis of the camera, and a processing unit for determining whether to terminate the machining based on an image photographed by the camera. The processing unit performs processing for acquiring information indicating a target machined width, processing for acquiring the image, processing for measuring a machined width on the acquired image, and processing for terminating the machining when the measured machined width equals or exceeds the target machined width.

An electron beam source including a cathode, an anode, a means for deflecting an electron beam over a target surface and at least one vacuum pump, the electron beam source further including a contraction area arranged between the anode and the means for deflecting the electron beam where a hole in the contraction area is aligned with a hole in the anode with respect to the cathode, a first vacuum pump is arranged between the contraction area and the anode and a second vacuum pump is arranged above the anode, a gas inlet is provided between the contraction area and the means for deflecting the electron beam, wherein a first crossover of the electron beam is arranged between the cathode and the anode and a second crossover is arranged at or in close proximity to the contraction area.

The present disclosure provides a system and method for controlling a dynamically controllable ultrawide-amplitude and high-response ion source, including: resolving dwell time of ion beam machining during iterative machining; selecting an appropriate velocity V of a movable shaft of a machine tool according to a calculation result of the dwell time; and dynamically calculating process parameters of an ion source according to an initial surface error of an optical component and the velocity V of the movable shaft, and generating a corresponding numerical control (NC) program to machine the optical component. The present disclosure can control the removal function of the ion beam polishing in real time, improve the precision and efficiency of the ion beam polishing, and further reduce the requirement on a movement system of the machine tool and the depth of a damaged layer.

The present disclosure provides a system and method for controlling a dynamically controllable ultrawide-amplitude and high-response ion source, including: resolving dwell time of ion beam machining during iterative machining; selecting an appropriate velocity V of a movable shaft of a machine tool according to a calculation result of the dwell time; and dynamically calculating process parameters of an ion source according to an initial surface error of an optical component and the velocity V of the movable shaft, and generating a corresponding numerical control (NC) program to machine the optical component. The present disclosure can control the removal function of the ion beam polishing in real time, improve the precision and efficiency of the ion beam polishing, and further reduce the requirement on a movement system of the machine tool and the depth of a damaged layer.

An automatic adjustment method and an automatic adjustment device of a beam of a semiconductor apparatus, and a training method of a parameter adjustment model are provided. The automatic adjustment method of the beam of the semiconductor apparatus includes the following steps. The semiconductor apparatus generates the beam. A wave curve of the beam is obtained. The wave curve is segmented into several sections. The slope of each of the sections is obtained. Several environmental factors of the semiconductor apparatus are obtained. According to the slopes and the environmental factors, at least one parameter adjustment command of the semiconductor apparatus is analyzed through the parameter adjustment model.