The present application discloses a method for preparing a TEM sample, comprising: step 1, forming a first protective layer to non-full fill a deep trench; step 2, performing a first time of front and rear side cutting using a FIB, so as to form the TEM sample having a first thickness, and a via in the deep trench is exposed from the front side and the rear side of the TEM sample; step 3, forming a second material layer, which fully fills the exposed via from the front side and the rear side of the TEM sample; and step 4, performing a second time of front and rear side cutting of a target area on the chip sample using the FIB, so as to reduce the thickness of the TEM sample to a target thickness.

The present application discloses a method for preparing a TEM sample, comprising: step 1, forming a first protective layer to non-full fill a deep trench; step 2, performing a first time of front and rear side cutting using a FIB, so as to form the TEM sample having a first thickness, and a via in the deep trench is exposed from the front side and the rear side of the TEM sample; step 3, forming a second material layer, which fully fills the exposed via from the front side and the rear side of the TEM sample; and step 4, performing a second time of front and rear side cutting of a target area on the chip sample using the FIB, so as to reduce the thickness of the TEM sample to a target thickness.

A method prepares a microsample from a volume sample using multiple particle beams. The method includes providing a volume sample in the microscope system, wherein the interior of the volume sample has a sample region of interest, and producing a macrolamella comprising the sample region of interest by removing sample material of the volume sample using one of the particle beams. The method also includes orienting the macrolamella relative to one of the particle beams, and removing sample material of the macrolamella via a beam so that the region of interest is exposed.

A method prepares a microsample from a volume sample using multiple particle beams. The method includes providing a volume sample in the microscope system, wherein the interior of the volume sample has a sample region of interest, and producing a macrolamella comprising the sample region of interest by removing sample material of the volume sample using one of the particle beams. The method also includes orienting the macrolamella relative to one of the particle beams, and removing sample material of the macrolamella via a beam so that the region of interest is exposed.

The present application discloses a method for preparing a TEM sample, comprising: step 1, step 1, providing a chip sample having a metal protective layer formed on a first surface; step 2, fixing the chip sample on a sample table of a FIB system; step 3, performing the first time of FIB cutting on the metal protective layer along a first direction, so as to form a groove, wherein the first direction is the width direction of the TEM sample, and the inner side surface of the groove is arc-shaped so that the thickness of the metal protective layer in a groove area gradually changes; and step 4, performing the second time of FIB cutting along a third direction to thin the chip sample and form the TEM sample, wherein the third direction is a direction from the metal protective layer to the chip sample.

The present application discloses a method for preparing a TEM sample, comprising: step 1, step 1, providing a chip sample having a metal protective layer formed on a first surface; step 2, fixing the chip sample on a sample table of a FIB system; step 3, performing the first time of FIB cutting on the metal protective layer along a first direction, so as to form a groove, wherein the first direction is the width direction of the TEM sample, and the inner side surface of the groove is arc-shaped so that the thickness of the metal protective layer in a groove area gradually changes; and step 4, performing the second time of FIB cutting along a third direction to thin the chip sample and form the TEM sample, wherein the third direction is a direction from the metal protective layer to the chip sample.

A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric-field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy greater than 500 keV.

The present disclosure proposes a crossover-forming deflector array of an electro-optical system for directing a plurality of electron beams onto an electron detection device. The crossover-forming deflector array includes a plurality of crossover-forming deflectors positioned at or at least near an image plane of a set of one or more electro-optical lenses of the electro-optical system, wherein each crossover-forming deflector is aligned with a corresponding electron beam of the plurality of electron beams.

The dual focused ion beam and scanning electron beam system includes an electron source that generates an electron beam and an ion source that generates an ion beam. The electron beam column directs an electron beam at a normal angle relative to a top surface of the stage. An ion beam column directs the ion beam at the stage. The ion beam is at an angle relative to the electron beam. A detector receives the electron beam reflected from the wafer on the stage.

The dual focused ion beam and scanning electron beam system includes an electron source that generates an electron beam and an ion source that generates an ion beam. The electron beam column directs an electron beam at a normal angle relative to a top surface of the stage. An ion beam column directs the ion beam at the stage. The ion beam is at an angle relative to the electron beam. A detector receives the electron beam reflected from the wafer on the stage.