A sample collective device includes two substrates and a spacer. Each substrate has a first surface and a second surface, and the two substrates are arranged with the first surfaces facing each other. The spacer is disposed between the two first surfaces for bonding and fixing the two substrates and forming a sample containing space. In addition, each of the substrates includes a first weakening structure located in the periphery of the sample containing space and exposed on the first surface. A sample collective device array including a plurality of the aforementioned sample collective devices is also provided.

The plasma is formed between electrodes to be energized from an electric power source, containing a partially ionized mass having a luminescence region including neutral atoms (NA), primary electrons (PE), secondary electrons (SE), and ions.

The method comprises the interspersed steps of: accelerating the primary electrons (PE) toward one of said electrodes (10) polarized by a short, positive, high voltage pulse, impacting primary electrons (PE) against said electrode (10) and ejecting secondary electrons (SE) from it; subsequently, accelerating the secondary electrons (SE) toward the luminescence region by polarization of said electrode (10) by a negative voltage with a lower voltage pulse colliding the secondary electrons with neutral atoms (NA) and producing positive ions (PI) and derived electrons (DE); the negative pulse must have a period of time sufficient to accelerate the positive ions (PI) of the luminescent region towards the electrodes 10, striking the surface of said electrodes; repeating the previous steps in order to obtain a steady state plasma with a desired degree of ionization. The control of the intensity and the period of the positive and negative pulses allow the control of the degree of ionization and the volume of the luminescent region of the plasma.

This invention relates generally to novel methods and novel devices for the continuous manufacture of nanoparticles, microparticles and nanoparticle/liquid solution(s). The nanoparticles (and/or micron-sized particles) comprise a variety of possible compositions, sizes and shapes. The particles (e.g., nanoparticles) are caused to be present (e.g., created) in a liquid (e.g., water) by, for example, preferably utilizing at least one adjustable plasma (e.g., created by at least one AC and/or DC power source), which plasma communicates with at least a portion of a surface of the liquid. At least one subsequent and/or substantially simultaneous adjustable electrochemical processing technique is also preferred. Multiple adjustable plasmas and/or adjustable electrochemical processing techniques are preferred. The continuous process causes at least one liquid to flow into, through and out of at least one trough member, such liquid being processed, conditioned and/or effected in said trough member(s). Results include constituents formed in the liquid including micron-sized particles and/or nanoparticles (e.g., metallic-based nanoparticles) of novel size, shape, composition and properties present in a liquid.

In a plasma processing apparatus, insulating members are horizontally and separately arranged above a mounting unit in a processing chamber. Each insulating member serves as a partition between a vacuum atmosphere in the processing chamber and an external atmosphere of the processing chamber. Antennas are provided on the respective insulating members to generate an inductively coupled plasma. A first processing gas is supplied into the processing chamber and adsorbed onto a substrate on the mounting unit. A second processing gas is turned into a plasma by power supplied from the antennas and is supplied to activate the first processing gas adsorbed onto the substrate or react with the first processing gas adsorbed onto the substrate. The supply of the first processing gas and the supply of the second processing gas are alternately repeated multiple times with a process of evacuating an inside of the processing chamber interposed therebetween.

In one embodiment, a plasma processing apparatus includes an electrostatic chuck configured to hold a substrate. The apparatus further includes a surrounding member holder configured to hold a surrounding member that surrounds an edge portion of the substrate. The apparatus further includes a plasma feeder configured to feed plasma for processing the substrate to a side of a first face of the substrate. The apparatus further includes a gas feeder configured to feed a gas to a space between the edge portion of the substrate and the surrounding member by discharging the gas to a side of a second face of the substrate from a gas hole provided on a side face of the electrostatic chuck or a gas hole provided in the surrounding member.

A charge volume configuration for use in delivery of gas to a reactor for processing semiconductor wafers is provided. A charge volume includes a chamber that extends between a proximal end and a distal end. A base connected to the proximal end of the chamber, and the base includes an inlet port and an outlet port. A tube is disposed within the chamber. The tube has a tube diameter that is less than a chamber diameter. The tube has a connection end coupled to the inlet port at the proximal end of the chamber and an output end disposed at the distal end of the chamber.

A method of manufacturing a semiconductor device, includes: supplying a first precursor and a first nitriding agent onto a substrate having a surface formed thereon with an oxygen-containing film in order to form an initial film on the oxygen-containing film; modifying the initial film into a first nitride film by nitriding the initial film with plasma; and supplying a second precursor and a second nitriding agent onto the substrate in order to form a second nitride film on the first nitride film.

Linear coils, a first ceramic block, and a second ceramic block are arranged in an inductively-coupled plasma torch. A chamber has an annular shape. Plasma generated inside the chamber is ejected to a substrate through an opening portion in the chamber. The substrate is processed by relatively moving the chamber and the substrate in a direction perpendicular to a longitudinal direction of the opening portion. The coil is arranged inside a rotating cylindrical ceramic pipe. Accordingly, the plasma can be generated with excellent power efficiency, and fast plasma processing can be performed.

A method for removing polymer is provided. An aqueous solution is applied to a semiconductor workpiece with polymer arranged thereon. The aqueous solution comprises an energy receiver configured to generate reactive radicals in response to energy. Energy is applied to the aqueous solution to generate the reactive radicals in the aqueous solution and to remove the polymer. A process tool for generating the reactive radicals is also provided.

Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.