A method for forming a protective film is provided. In the method, a source gas containing an organic metal gas or an organic semi-metal gas is supplied to a substrate having a plurality of recessed shapes formed in a surface so as to cause the source gas to adsorb on the surface of the substrate including the plurality of recessed shapes. Then, an oxidation gas is supplied to the surface of the substrate including the plurality of recessed shapes to oxidize the source gas adsorbed on the surface of the substrate, thereby depositing an oxidation film of the organic metal or the organic semi-metal on a flat area between the plurality of recessed shapes. Supplying the source gas to the substrate and supplying the oxidation gas to the substrate are repeated at a rate in a range of 90 to 300 cycles per minute.

[Object] To make it difficult for components other than films to be contained in a lamination interface.

[Solving Means] In a deposition apparatus, a vacuum chamber includes a partition wall which defines a plasma formation space and includes quartz. An deposition preventive plate is provided between at least a part of the partition wall and the plasma formation space and includes at least one of yttria, silicon nitride, or silicon carbide. On a support stage, a substrate including a trench or hole including a bottom portion and a side wall is capable of being disposed. A plasma generation source generates first plasma of deposition gas including silicon introduced into the plasma formation space to thereby form a semiconductor film including silicon on the bottom portion and the side wall. The plasma generation source generates second plasma of etching gas including halogen introduced into the plasma formation space to thereby selectively remove the semiconductor film formed on the side wall. A controller is capable of switching between generation of the first plasma and generation of the second plasma.

A parallelepipedal low-pressure plasma chamber body of glass is disclosed. The low-pressure plasma chamber may have electrodes at opposing sides of the low-pressure plasma chamber body. Furthermore, the low-pressure plasma chamber may have at opposing sides a door and a rear wall closure. The door and rear wall closure may in each case have at least one media connection in order to achieve a uniform gas flow in the low-pressure plasma chamber. The door may be assembled on the collar of the low-pressure plasma chamber body which extends radially away from the longitudinal axis of the low-pressure plasma chamber body. The low-pressure plasma chamber body is preferably produced using the pressing method or blow-and-blow method, in an analogous manner to industrial glass bottle production.

This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system that may be configured to enable non-ambipolar diffusion to counter ion loss to the chamber wall. The plasma processing system may include a ring cavity coupled to the plasma processing system that is in fluid communication with plasma generated in the plasma processing system. The ring cavity may be coupled to a power source to form plasma that may diffuse ions into the plasma processing system to minimize the impact of ion loss to the chamber wall.

Implementations described herein generally relate to components and methods used in plasma processing, and more specifically relate to grooved surfaces for controlling RF return path lengths in plasma processing chambers and methods for forming the same. In one implementation, a backing plate for a plasma processing chamber is provided. The backing plate comprises a rectangular body. The rectangular body has a front surface, a back surface opposing the front surface, a first axis perpendicular to a center of the rectangular body and a plurality of grooves formed in the front surface. At least one groove of the plurality of grooves has a first length across the groove in a first location and a second length across the groove in a second location.

An arc chamber liner has first and second surfaces and a hole having a first diameter. A liner lip having a second diameter extends upwardly from the second surface toward the first surface and surrounds the hole. An electrode has a shaft with a third diameter and a head with a fourth diameter. The third diameter is less than the first diameter and passes through the body and hole and is electrically isolated from the liner by an annular gap. The head has a third surface having an electrode lip extending downwardly from the third surface toward the second surface. The electrode lip has a fifth diameter between the second and fourth diameters. A spacing between the liner and electrode lips defines a labyrinth seal to generally prevent contaminants from entering the annular gap. The shaft has an annular groove configured to accept a boron nitride seal.

A plasma processing system for generating plasma to process a wafer. The plasma processing system includes a set of top coils for initiating the plasma, a set of side coils for affecting distribution of the plasma, and a chamber structure for containing the plasma. The chamber structure includes a chamber wall and a dielectric member. The dielectric member includes a top, a vertical wall, and a flange. The top is connected through the vertical wall to the flange, and is connected through the vertical wall and the flange to the chamber wall. The set of top coils is disposed above the top. The set of side coils surrounds the vertical wall. A vertical inner surface of the vertical wall is configured to be exposed to the plasma. The inner diameter of the vertical wall is smaller than the inner diameter of the chamber wall.

A processing chamber including multiple plasma sources in a process chamber top. Each one of the plasma sources is a ring plasma source including a primary winding and multiple ferrites. A plasma processing system is also described. A method of plasma processing is also described.

A wafer susceptor includes a conductive member attached to a surface of a plate, a through-hole penetrating through the plate and the conductive member, a screw hole formed in a conductive-member penetrating portion of the through-hole, a stopper surface formed in the conductive member, an insulation pipe screwed into the screw hole, and an insulating sealing member arranged between a plate-facing surface of the insulation pipe and the plate, wherein, with a contact surface of the insulation pipe coming into contact with the stopper surface of the conductive member, the insulation pipe is prevented from further advancing into the screw hole, a fore end surface of a sealing-member support portion of the insulation pipe is positioned at a predetermined position where the fore end surface does not contact the plate, and the sealing member is pressed between the plate-facing surface of the insulation pipe and the plate.

A transparent conductive film includes a substrate having opposed first and second surfaces; a first hard coating layer formed on the first surface; a first optical adjustment layer formed on the first hard coating layer, the first optical adjustment layer comprising a second binder resin and a plurality of second particles distributed in the second binder resin; a first transparent conductor layer formed on the first optical adjustment layer, the first transparent conductor layer having a plurality of protrusions on a surface thereof corresponding to the plurality of second particles; a second hard coating layer formed on the second surface; a second optical adjustment layer formed on the second hard coating layer; and a second transparent conductor layer formed on the second optical adjustment layer.