An embodiment low contamination chamber includes a gas inlet, an adjustable top electrode, and an adjustable bottom electrode. The low contamination chamber is configured to adjust a distance between the adjustable top electrode and the adjustable bottom electrode in response to a desired density of plasma and a measured density of plasma measured between the adjustable top electrode and the adjustable bottom electrode during a surface activation process. The low contamination chamber further includes an outlet.

Methods and systems for monitoring etch or deposition processes using image-based in-situ process monitoring techniques include illuminating a measurement area on a sample disposed in a process chamber. The measurement area is illuminated using an input beam generated remote from the process chamber and transmitted to a first viewing window of the process chamber by a first optical fiber. Portions of the first input beam reflected from the measurement area are transmitted from the first viewing window to an imaging sensor by a second optical fiber. A sequence of images is obtained at the imaging sensor, and a change in reflectance of pixels within each of the images is determined. The etch or deposition process is monitored based on the change in reflectance.

Embodiments disclosed herein include sensor devices and methods of using the sensor devices. In an embodiment, a sensor device comprises a substrate, a support extending up from the substrate, and a resonator mechanically coupled to the support. In an embodiment, the sensor device further comprises an antenna that is configured to electromagnetically couple with the resonator, wherein the antenna is connected to a transmission line in the substrate.

The invention provides a method and system to remotely monitor a plasma (3) comprising a magnetic field antenna (2) positioned in the near electromagnetic field of a coupled plasma source wherein the magnetic field antenna is a magnetic loop antenna placed in the near electromagnetic field and measure near field signals emitted from the plasma source. A radio system (1) is utilised to analyse the low power signal levels across a wide frequency band. Plasma paramaters such as series, or geometric, resonance plasma and electron-neutral collision frequencies are evaluated via a fitting of resonant features present on higher harmonics of the driving frequency to identify arcing, pump or matching failure events, common in fabrication plasma systems.

Disclosed herein is a system for pulsed DC biasing and clamping a substrate. The system can include a plasma chamber having an ESC for supporting a substrate. An electrode is embedded in the ESC and is electrically coupled to a biasing and clamping circuit. The biasing and clamping circuit includes at least a shaped DC pulse voltage source and a clamping network. The clamping network includes a DC voltage source and a diode, and a resistor. The shaped DC pulse voltage source and the clamping network are connected in parallel. The biasing and clamping network automatically maintains a substantially constant clamping voltage, which is a voltage drop across the electrode and the substrate when the substrate is biased with pulsed DC voltage, leading to improved clamping of the substrate.

A measurement system including an imaging device and a plasma processing device having a plasma generator configured to generate plasma from a gas supplied into a processing chamber and a controller. The imaging device is configured to generate optical information of the plasma from image data of imaged plasma in the processing chamber, and the controller is configured to convert the generated optical information of the plasma into a plasma parameter that determines physical characteristics of the plasma with reference to a storage that stores correlation information between the optical information of the plasma and measurement results of the plasma parameter.

A deposition system is provided capable of measuring at least one of the film characteristics (e.g., thickness, resistance, and composition) in the deposition system. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition system in accordance with the present disclosure includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, and a target enclosing the substrate process chamber. A shutter disk including an in-situ measuring device is provided.

Methods of operating an apparatus to obtain ion energy distribution measurements in a plasma processing system are described. In one example, a method comprises providing a substrate for placement in the plasma processing system and exposure to the plasma, the substrate having an ion energy analyser disposed therein for measuring the ion energy distribution at the substrate surface during plasma processing, the analyser comprising a plurality of conductive grids, and a collection electrode, each grid separated by an insulating layer, providing a high voltage generating circuit within the substrate and configured to take the output voltage of a battery to power the high voltage generating circuit and apply a voltage to a first grid of the plurality of conductive grids, providing a high voltage switch configured to discharge the first grid to a floating ground of the apparatus and a resistor in parallel with the high voltage switch, sampling ion current during a first stage while a first voltage is being charged on the first grid from the floating ground potential to a plateau voltage, and sampling ion current during a second stage while a second voltage applied to the first grid is discharging through the resistor from a predetermined voltage generated by the high voltage generating circuit to the plateau voltage.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing having an inner space; a plate separating the inner space into a first space which is above and a second space which is below and having a plurality of through holes; a first gas supply unit configured to supply a first gas to the first space; a plasma source for generating a plasma at the first space or the second space; and a monitoring unit installed at the plate and configured to monitor a characteristic of the plasma generated at the first space or the second space.

Exemplary diagnostic wafers for a semiconductor processing chamber may include a wafer body defining a plurality of recesses. The diagnostic wafers may include at least one data logging puck positionable within one of the plurality of recesses. The diagnostic wafers may include at least one battery puck positionable within one of the plurality of recesses. The diagnostic wafers may include at least one sensor puck positionable within one of the plurality of recesses.