A system having an auxiliary plasma source, disposed proximate the workpiece, for use with an ion beam is disclosed. The auxiliary plasma source is used to create ions and radicals which drift toward the workpiece and may form a film. The ion beam is then used to provide energy so that the ions and radicals can process the workpiece. Further, various applications of the system are also disclosed. For example, the system can be used for various processes including deposition, implantation, etching, pre-treatment and post-treatment. By locating an auxiliary plasma source close to the workpiece, processes that were previously not possible may be performed. Further, two dissimilar processes, such as cleaning and implanting or implanting and passivating can be performed without removing the workpiece from the end station.

A system having an auxiliary plasma source, disposed proximate the workpiece, for use with an ion beam is disclosed. The auxiliary plasma source is used to create ions and radicals which drift toward the workpiece and may form a film. The ion beam is then used to provide energy so that the ions and radicals can process the workpiece. Further, various applications of the system are also disclosed. For example, the system can be used for various processes including deposition, implantation, etching, pre-treatment and post-treatment. By locating an auxiliary plasma source close to the workpiece, processes that were previously not possible may be performed. Further, two dissimilar processes, such as cleaning and implanting or implanting and passivating can be performed without removing the workpiece from the end station.

A system having an auxiliary plasma source, disposed proximate the workpiece, for use with an ion beam is disclosed. The auxiliary plasma source is used to create ions and radicals which drift toward the workpiece and may form a film. The ion beam is then used to provide energy so that the ions and radicals can process the workpiece. Further, various applications of the system are also disclosed. For example, the system can be used for various processes including deposition, implantation, etching, pre-treatment and post-treatment. By locating an auxiliary plasma source close to the workpiece, processes that were previously not possible may be performed. Further, two dissimilar processes, such as cleaning and implanting or implanting and passivating can be performed without removing the workpiece from the end station.

Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component, such as an energy purity module, having a plurality of conductive beam optics contained therein. The system further includes a power supply system for supplying a voltage and a current to the beam-line component during a cleaning mode, wherein the power supply system may include a first power plug coupled to a first subset of the plurality of conductive beam optics and a second power plug coupled to a second subset of the plurality of conductive beam optics. During a cleaning mode, the voltage and current may be simultaneously supplied and split between each of the first and second power plugs.

Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component, such as an energy purity module, having a plurality of conductive beam optics contained therein. The system further includes a power supply system for supplying a voltage and a current to the beam-line component during a cleaning mode, wherein the power supply system may include a first power plug coupled to a first subset of the plurality of conductive beam optics and a second power plug coupled to a second subset of the plurality of conductive beam optics. During a cleaning mode, the voltage and current may be simultaneously supplied and split between each of the first and second power plugs.

A method for examining a specimen surface with a probe of a scanning probe microscope, the specimen surface having an electrical potential distribution. The method includes (a) determining the electrical potential distribution of at least one first partial region of the specimen surface; and (b) modifying the electrical potential distribution in the at least one first partial region of the specimen surface and/or modifying an electrical potential of the probe of the scanning probe microscope before scanning at least one second partial region of the specimen surface.

A method for examining a specimen surface with a probe of a scanning probe microscope, the specimen surface having an electrical potential distribution. The method includes (a) determining the electrical potential distribution of at least one first partial region of the specimen surface; and (b) modifying the electrical potential distribution in the at least one first partial region of the specimen surface and/or modifying an electrical potential of the probe of the scanning probe microscope before scanning at least one second partial region of the specimen surface.

A method is presented for cleaning an ion implanter during operation of the ion implanter. The method includes generating a gallium (III) iodide (GaI.sub.3) vapor from a GaI.sub.3 source running concurrently with a hydrogen-containing gaseous plasma to cause a reaction with at least iodine (I) residue deposits, selectively filtering ions from the GaI.sub.3 vapor and the hydrogen-containing gaseous plasms to create a Ga ion beam, and directing the Ga ion beam onto a semiconductor substrate for Ga implantation. After completion of the Ga implantation, an argon (Ar) based ion beam is run through the ion implanter for post-cleaning of the ion implanter.

A method is presented for cleaning an ion implanter during operation of the ion implanter. The method includes generating a gallium (III) iodide (GaI.sub.3) vapor from a GaI.sub.3 source running concurrently with a hydrogen-containing gaseous plasma to cause a reaction with at least iodine (I) residue deposits, selectively filtering ions from the GaI.sub.3 vapor and the hydrogen-containing gaseous plasms to create a Ga ion beam, and directing the Ga ion beam onto a semiconductor substrate for Ga implantation. After completion of the Ga implantation, an argon (Ar) based ion beam is run through the ion implanter for post-cleaning of the ion implanter.

A method is presented for cleaning an ion implanter during operation of the ion implanter. The method includes generating a gallium (III) iodide (GaI.sub.3) vapor from a GaI.sub.3 source running concurrently with a hydrogen-containing gaseous plasma to cause a reaction with at least iodine (I) residue deposits, selectively filtering ions from the GaI.sub.3 vapor and the hydrogen-containing gaseous plasms to create a Ga ion beam, and directing the Ga ion beam onto a semiconductor substrate for Ga implantation. After completion of the Ga implantation, an argon (Ar) based ion beam is run through the ion implanter for post-cleaning of the ion implanter.