A channel electron multiplier having a high aspect ratio and differential coatings along its channel length is disclosed. The elongated tube has an input end, an output end, and an interior surface extending along the length of the tube between the input end and the output end. The channel electron multiplier also has first and second conductive layers formed on the interior surface of the tube. The first conductive layer is selected to provide a first electrical resistance, a first electron emission characteristic, or both, and the second conductive layer is selected to provide a second electrical resistance, a second electron emission characteristic, or both. A method of making a channel electron multiplier having two or more different conductive layers is also disclosed.

A channel electron multiplier having a high aspect ratio and differential coatings along its channel length is disclosed. The elongated tube has an input end, an output end, and an interior surface extending along the length of the tube between the input end and the output end. The channel electron multiplier also has first and second conductive layers formed on the interior surface of the tube. The first conductive layer is selected to provide a first electrical resistance, a first electron emission characteristic, or both, and the second conductive layer is selected to provide a second electrical resistance, a second electron emission characteristic, or both. A method of making a channel electron multiplier having two or more different conductive layers is also disclosed.

The present embodiment relates to an ion detector provided with a structure for suppressing degradation over time in an electron multiplication mechanism in the ion detector. The ion detector includes a dynode unit, serving as an electron multiplication mechanism, which multiplies secondary electrons which are emitted in response to incidence of ions, and a semiconductor detector having an electron multiplication function. Further, a focus electrode having an opening that allows passage of secondary electrons is disposed on a trajectory of secondary electrons which are directed from the dynode unit toward the semiconductor detector, and the focus electrode functions to guide secondary electrons from the dynode unit onto an electron incidence surface of the semiconductor detector.

A channel electron multiplier having a high aspect ratio and differential coatings along its channel length is disclosed. The elongated tube has an input end, an output end, and an interior surface extending along the length of the tube between the input end and the output end. The channel electron multiplier also has first and second conductive layers formed on the interior surface of the tube. The first conductive layer is selected to provide a first electrical resistance, a first electron emission characteristic, or both, and the second conductive layer is selected to provide a second electrical resistance, a second electron emission characteristic, or both. A method of making a channel electron multiplier having two or more different conductive layers is also disclosed.

A channel electron multiplier having a high aspect ratio and differential coatings along its channel length is disclosed. The elongated tube has an input end, an output end, and an interior surface extending along the length of the tube between the input end and the output end. The channel electron multiplier also has first and second conductive layers formed on the interior surface of the tube. The first conductive layer is selected to provide a first electrical resistance, a first electron emission characteristic, or both, and the second conductive layer is selected to provide a second electrical resistance, a second electron emission characteristic, or both. A method of making a channel electron multiplier having two or more different conductive layers is also disclosed.

The present embodiment relates to an ion detector provided with a structure for suppressing degradation over time in an electron multiplication mechanism in the ion detector. The ion detector includes a dynode unit, serving as an electron multiplication mechanism, which multiplies secondary electrons which are emitted in response to incidence of ions, and a semiconductor detector having an electron multiplication function. Further, a focus electrode having an opening that allows passage of secondary electrons is disposed on a trajectory of secondary electrons which are directed from the dynode unit toward the semiconductor detector, and the focus electrode functions to guide secondary electrons from the dynode unit onto an electron incidence surface of the semiconductor detector.

In a photoelectric conversion device, the potential control unit controls electric potentials applied to the meta-surface. The meta-surface includes a plurality of patterns which are space away from each other. The plurality of patterns include an antenna portion and at least one bias portion. The antenna portion extends in a predetermined direction and emits the electron in response to incidence of the electromagnetic wave. The potential control unit switches a first state and a second state by controlling the electric potentials applied to the plurality of patterns. In the first state, a component of an electric field from the bias portion toward the antenna portion in a predetermined direction is positive. In the second state, a component of an electric field from the bias portion toward the antenna portion in the predetermined direction is negative.

In a photoelectric conversion device, the potential control unit controls electric potentials applied to the meta-surface. The meta-surface includes a plurality of patterns which are space away from each other. The plurality of patterns include an antenna portion and at least one bias portion. The antenna portion extends in a predetermined direction and emits the electron in response to incidence of the electromagnetic wave. The potential control unit switches a first state and a second state by controlling the electric potentials applied to the plurality of patterns. In the first state, a component of an electric field from the bias portion toward the antenna portion in a predetermined direction is positive. In the second state, a component of an electric field from the bias portion toward the antenna portion in the predetermined direction is negative.

A photoelectric conversion device is provided with an electron emitter including a meta-surface emitting an electron in response to incidence of an electromagnetic wave. The meta-surface includes a plurality of photoelectric conversion units having a sensitivity for electromagnetic waves having mutually different wavelength regions. The plurality of photoelectric conversion units respectively include patterns having mutually different configurations.

A magnetic sensor that generates a signal based on inverse spin Hall effect. The sensor includes a magnetic free layer and a non-magnetic, electrically conductive spin Hall layer located adjacent to the magnetic free layer. Circuitry is configured to supply an electrical current that travels through the magnetic free layer and the spin Hall layer in a direction that is generally perpendicular to the plane of the layers or perpendicular to a plane defined by an interface between the magnetic free layer and the spin Hall layer. The inverse spin Hall effect causes an electrical voltage in the spin Hall layer as a result of the current, and the voltage changes relative to the orientation of magnetization of the magnetic free layer. Circuitry is provided for measuring the voltage in the spin Hall layer in a direction that is generally perpendicular to the direction of the electrical current.