A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit forms plural and parallel images of one single electron source by deflecting plural beamlets of a parallel primary-electron beam therefrom, and one objective lens focuses the plural deflected beamlets onto a sample surface and forms plural probe spots thereon. A movable condenser lens is used to collimate the primary-electron beam and vary the currents of the plural probe spots, a pre-beamlet-forming means weakens the Coulomb effect of the primary-electron beam, and the source-conversion unit minimizes the sizes of the plural probe spots by minimizing and compensating the off-axis aberrations of the objective lens and condenser lens.

Provided is an aberration corrector having a plurality of magnetic poles including a first magnetic pole and further magnetic poles, a ring that magnetically connects the plurality of magnetic poles with one another, the ring having a constant spacing to at least the first magnetic pole, a plurality of magnetic field modulators including a first magnetic field modulator and further magnetic field modulators, and a plurality of guides including a first guide and further guides; wherein the first magnetic field modulator includes a soft magnetic material, wherein the first magnetic field modulator is disposed in a first position, the first position being one of the following: adjacent to a first air gap separating the first magnetic pole and the ring, or at an inner ring surface or radially outward of the inner ring surface along an axis of the first magnetic pole, and wherein the first guide constrains the first magnetic field modulator to positions along a first axis substantially parallel to or coincident with the axis of the first magnetic pole.

The present disclosure relates to an ion beam etching (IBE) system including a plasma chamber configured to provide plasma, a screen grid, an extraction grid, an accelerator grid, and a decelerator grid. The screen grid receives a screen grid voltage to extract ions from the plasma within the plasma chamber to form an ion beam through a hole. The extraction grid receives an extraction grid voltage, where a voltage difference between the screen grid voltage and the extraction grid voltage determines an ion current density of the ion beam. The accelerator grid receives an accelerator grid voltage. A voltage difference between the extraction grid voltage and the accelerator grid voltage determines an ion beam energy for the ion beam. The IBE system can further includes a deflector system having a first deflector plate and a second deflector plate around a hole to control the direction of the ion beam.

An ignition controlling method is performed in a film forming apparatus including: a processing container that accommodates a substrate; a plasma box formed on the processing container; a pair of electrodes arranged to sandwich the plasma box therebetween; and an RF power supply connected to the pair of electrodes via a matching box including a variable capacitor. The ignition controlling method includes: storing first information indicating a voltage between the electrodes for each of a plurality of adjustment positions of the variable capacitor, and second information indicating a voltage between the electrodes and the substrate; determining an initial position of the variable capacitor based on the first and second information; and selecting an area where a plasma ignition is to be performed from the plasma box and the processing container, by setting the adjustment positions of the variable capacitor to the initial position.

An ion source with a target holder for holding a solid dopant material is disclosed. The ion source comprises a thermocouple disposed proximate the target holder to monitor the temperature of the solid dopant material. In certain embodiments, a controller uses this temperature information to vary one or more parameters of the ion source, such as arc voltage, cathode bias voltage, extracted beam current, or the position of the target holder within the arc chamber. Various embodiments showing the connections between the controller and the thermocouple are shown. Further, embodiments showing various placement of the thermocouple on the target holder are also presented.

According to one embodiment, an electron beam device includes a support which supports the sample and an electrode disposed below the sample on the support The electrode is for applying a voltage to the sample and includes a plurality of columnar electrodes that can be independently controlled to apply different voltages to portions of the sample. A controller for generating correction data for correcting the distribution of an electric field generated across the area of the sample. The correction data is generated based on structure information indicating a structure of the sample. The controller controls the plurality of columnar electrodes to apply local voltages set based on the correction data.

A substrate processing system includes a substrate support assembly to support a semiconductor substrate during processing of the semiconductor substrate in the substrate processing system. A first edge ring is arranged around the substrate support assembly. The first edge ring is movable relative to the substrate support assembly. A second edge ring is arranged around the substrate support assembly and under the first edge ring. A controller is configured to compensate a height of the first edge ring based on erosion of the first and second edge rings.

A cassette for a workpiece processing system is provided. The cassette is configured to hold one or more replaceable parts, one or more workpieces and one or more pedestal protectors. The cassette includes a divider configured to separate the one or more replacement parts from the one or more workpieces and/or one or more pedestal protectors. The cassette is configured to be disposed in a storage chamber of a workpiece processing apparatus to facilitate automated replacement of replacement parts in one or more processing chambers. Workpiece processing systems and methods of replacing replacement parts in a workpiece processing system are also provided.

Provided are an electron gun, an electron gun component, an electron beam applicator, and an alignment method that can align the emission axis of an electron beam with the optical axis of the electron optical system of the counterpart device even when misalignment of a mounted position of the electron gun being mounted to the counterpart device is larger. The electron gun includes: a light source; a vacuum chamber; a photocathode that emits an electron beam in response to receiving light from the light source; an electrode kit; and an electrode kit drive device, the electrode kit includes a photocathode supporting part, and an anode arranged spaced apart from the photocathode supporting part, the photocathode is placed on the photocathode supporting part, and the electrode kit drive device moves the electrode kit in an X-Y plane, where one direction is defined as an X direction, a direction orthogonal to the X direction is defined as a Y direction, and a plane including the X direction and the Y direction is defined as the X-Y plane.

An anti-breakdown ion source discharge apparatus includes a discharge chamber, a coil support, an upper insulation fixing block, a discharge component and an ion source chamber. The discharge component includes a radio-frequency coil, a lower conductive connector and an upper conductive connector. The radio-frequency coil is fixed on a coil support base; the coil support base is clamped on an inner wall of the bottom of the ion source base; the coil support is along the circumference of the coil support base; the radio-frequency coil passes through the coil support; the upper conductive connector passes by the radio-frequency coil and the coil support base from the outside of the radio-frequency coil and extends into the bottom of the discharge chamber; and the upper insulation fixing block is sleeved over the upper conductive connector and is fixed on the inner wall of the bottom of the ion source chamber.