There is a plasma processing apparatus, comprising: a plasma processing chamber; a substrate support having a ring supporting surface; an insulating ring disposed on the ring supporting surface, the insulating ring having at least three through holes, each of the through holes having upper and lower hole portions, the lower hole portion having a flaring shape; a conductive ring supported by the insulating ring, the conductive ring having at least three grooves on a lower surface, the grooves corresponding to the through holes; at least three lift pins disposed below the ring supporting surface, the lift pins corresponding to the grooves, each of the lift pins having upper and lower supporting portions, the upper supporting portion being configured to support the conductive ring, the lower supporting portion configured to support the insulating ring; and at least one actuator configured to vertically move the pins.

A film forming apparatus for forming a film on a moving substrate by sputtering includes a processing container, a placement base having a placement surface on which a substrate is placed, a holder configured to hold a target, an upper shield member configured to divide a space in the processing container into an upper space and a lower space, a movement mechanism configured to move the placement base in a movement direction parallel to the placement surface and to move the placement base in the vertical direction, a leg member configured to connect the placement base and the movement mechanism, and a lower shield member configured to define the movement space together with the upper shield member. The lower shield member includes a fixed shield member and a moving shield member.

A pattern inspection apparatus includes a column to scan a substrate on which a pattern is formed, using multi-beams composed of a plurality of electron beams, a stage to mount the substrate thereon and to be movable, a detector to detect secondary electrons emitted from the substrate because the substrate is irradiated with the multi-beams, and a drive mechanism to move the detector in order to follow movement of the stage.

According to one aspect of the present invention, a stage mechanism includes a movable stage disposed in a vacuum atmosphere and mounting a heat source, a first heat pipe connected to the heat source, a movable mechanism configured to move according to the movement of the first heat pipe caused by the movement of the stage, by using a portion of the first heat pipe, and a cooling mechanism configured to cool the first heat pipe through the movable mechanism.

A plasma generating device is disclosed. A plasma generating device according to an embodiment of the present invention comprises: a plasma generating module for generating plasma; and at least one plasma nozzle for externally discharging the plasma generated by the plasma generating module, wherein a rotating body is provided separately from the plasma generating module and is rotatably disposed on the outside of the plasma generating module.

In an exemplary process for lower dose rate ion implantation of a work piece, an ion beam may be generated using an ion source and an extraction manipulator. The extraction manipulator may be positioned at a gap distance from an exit aperture of the ion source. A current of the ion beam exiting the extraction manipulator may be maximized when the extraction manipulator is positioned at an optimal gap distance from the exit aperture. The gap distance at which the extraction manipulator is positioned from the exit aperture may differ from the optimal gap distance by at least 10 percent. A first potential may be applied to a first set of electrodes. An x-dimension of the ion beam may increase as the ion beam passes through the first set of electrodes. The work piece may be positioned in the ion beam to implant ions into the work piece.

There is provided a charged particle beam system in which a detector can be placed in an appropriate analysis position. The charged particle beam system (100) includes: a charged particle source (11) for producing charged particles; a sample holder (20) for holding a sample (S); a detector (40) for detecting, in the analysis position, a signal produced from the sample (S) by impingement of the charged particles on the sample (S); a drive mechanism (42) for moving the detector (40) into the analysis position; and a controller (52) for controlling the drive mechanism (42). The controller (52) performs the steps of: obtaining information about the type of the sample holder (20); determining the analysis position on the basis of the obtained information about the type of the sample holder (20); and controlling the drive mechanism (42) to move the detector (40) into the determined analysis position.

The invention relates to charged particle beam generator comprising a charged particle source for generating a charged particle beam, a collimator system comprising a collimator structure with a plurality of collimator electrodes for collimating the charged particle beam, a beam source vacuum chamber comprising the charged particle source, and a generator vacuum chamber comprising the collimator structure and the beam source vacuum chamber within a vacuum, wherein the collimator system is positioned outside the beam source vacuum chamber. Each of the beam source vacuum chamber and the generator vacuum chamber may be provided with a vacuum pump.

Systems and methods for automated alignment of cathodoluminescence (CL) optics in an electron microscope relative to a sample under inspection are described. Accurate placement of the sample and the electron beam landing position on the sample with respect to the focal point of a collection mirror that reflects CL light emitted by the sample is critical to optimizing the amount of light collected and to preserving information about the angle at which light is emitted from the sample. Systems and methods are described for alignment of the CL mirror in the XY plane, which is orthogonal to the axis of the electron beam, and for alignment of the sample with respect to the focal point of the CL mirror along the Z axis, which is coincident with the electron beam.

Provided is a multi charged particle beam writing apparatus, including: an emission unit emitting a charged particle beam; a first aperture substrate having a plurality of first openings, the first aperture being irradiated with the charged particle beam, and the first aperture allowing a portion of the charged particle beam to pass through the plurality of first openings to form multiple beams; a second aperture substrate having a plurality of second openings through which each beam of the multiple beams passes and the second aperture substrate being capable of independently deflecting the each beam of the multiple beams; and a shielding plate provided so as to be insertable to a space between the first aperture substrate and the second aperture substrate and the shielding plate being capable of simultaneously shielding all the multiple beams.