The invention relates to charged particle beam generator comprising a charged particle source for generating a charged particle beam, a collimator system comprising a collimator structure with a plurality of collimator electrodes for collimating the charged particle beam, a beam source vacuum chamber comprising the charged particle source, and a generator vacuum chamber comprising the collimator structure and the beam source vacuum chamber within a vacuum, wherein the collimator system is positioned outside the beam source vacuum chamber. Each of the beam source vacuum chamber and the generator vacuum chamber may be provided with a vacuum pump.

A system for preventing collisions between components in a particle beam instrument is disclosed. The system is particularly beneficial in use with instruments wherein moveable components are used within a chamber that obscures them from being viewed from outside the chamber. The system comprises: a capacitance sensor configured to monitor the capacitance between a first component and a second component of the instrument, and a proximity module configured to: derive a capacitance parameter from the monitored capacitance between the first component and the second component; and output a proximity alert signal in accordance with a comparison between the derived capacitance parameter and a predetermined capacitance parameter threshold value.

An ion source with a target holder for holding a solid dopant material is disclosed. The ion source comprises a thermocouple disposed proximate the target holder to monitor the temperature of the solid dopant material. In certain embodiments, a controller uses this temperature information to vary one or more parameters of the ion source, such as arc voltage, cathode bias voltage, extracted beam current, or the position of the target holder within the arc chamber. Various embodiments showing the connections between the controller and the thermocouple are shown. Further, embodiments showing various placement of the thermocouple on the target holder are also presented.

A scanning electron microscope according to the present invention enables a column to be detached from a sample installation unit, thereby addressing issues related to the column, such as simple calibration related to the column, tilt of a beam, replacement of consumables, etc., by replacing the entire column. As such, the scanning electron microscope has the advantage of being simply and easily repaired and maintained.

Disclosed are a bottom electrode assembly, a plasma processing apparatus, and a method of replacing a focus ring, wherein the bottom electrode assembly comprises: a base for supporting a wafer to be processed; a focus ring provided surrounding the outer periphery of the base; a cover ring disposed beneath the focus ring, a plurality of recesses being arranged along the circumferential direction of the cover ring; moving blocks provided in the recesses, an inner top corner of each moving block being provided with a step, the step being configured to support part of the focus ring; and a drive device connected to the moving blocks to activate the moving blocks to drive the focus ring to move up and down. With the bottom electrode assembly, replacement of the focus ring can be performed without opening the process chamber.

An ion source with a target holder for holding a solid dopant material is disclosed. The ion source comprises a thermocouple disposed proximate the target holder to monitor the temperature of the solid dopant material. In certain embodiments, a controller uses this temperature information to vary one or more parameters of the ion source, such as arc voltage, cathode bias voltage, extracted beam current, or the position of the target holder within the arc chamber. Various embodiments showing the connections between the controller and the thermocouple are shown. Further, embodiments showing various placement of the thermocouple on the target holder are also presented.

A substrate processing method capable of performing a stable plasma process includes: supplying a source gas under a first plasma atmosphere using a substrate processing apparatus including a power generation unit, a first reactor, and a matching network between the power generation unit and the first reactor; purging the source gas; supplying a reaction gas under a second plasma atmosphere; and purging the reaction gas, wherein setting a variable capacitor included in the matching network to a first value is performed during the purging of the source gas, and setting the variable capacitor to a second value is performed during the purging of the reaction gas.

Provided is a mass separator (100) for performing mass separation for an ion beam (IB). The mass separator (100) includes a transfer structure (30) that is a component of a yoke (13) and move at least one of an upper yoke (13a) positioned over the beam path (L), a lower yoke (13b) positioned under the beam path (L), and a side yoke (13c, 13d) positioned at a side of the beam path (L) between a normal position (P) in the traveling of the ion beam (IB) and a retracted position (Q) that does not overlap with at least a part of the normal position (P); the yoke (13) is surrounding the beam path (L) and is made of a magnetic body.

Disclosed is a plasma generating device which includes a reactor body having a gas injection hole on one side thereof, and a collector connected to an opposite side of the reactor body and having a collection space in an interior thereof. The reactor body and the collector provide a reaction space having a plasma channel in an interior thereof.

A gas feed device includes a feed unit that feeds a gaseous state of a first precursor and/or a gaseous state of a second precursor, a first line device that conducts the gaseous state of the first precursor to the feed unit and a second line device that conducts the gaseous state of the second precursor to the feed unit. A first valve is arranged between the first line device and the feed unit. A second valve is arranged between the second line device and the feed unit. A control valve is connected to the first valve and is arranged between the first valve and the feed unit. The control valve is connected to the second valve and is arranged between the second valve and the feed unit. The first valve, the second valve and/or the control valve may be magnetic valve(s).