According to an embodiment of the present invention, an apparatus for processing substrate comprising: a susceptor; and a cover unit installed on an upper part of the susceptor, the substrate is placed on the cover unit, wherein the cover unit comprises: a cover frame having one or more air gaps; and one or more covers having a shape corresponding to each of the air gaps and mountable in each of the air gaps, wherein a depth of the air gap is at least three times the thickness of the substrate.

The present invention is directed to a side entry type sample holder which enables observation with an observation apparatus without removing the sample to be analyzed from the sample holder after processing the sample to be analyzed by a processing apparatus. The sample holder includes a grip, a sample holder main body extending from the grip, a tip portion which is connected to the sample holder main body and provided with a sample table for fixing a sample, and a mechanism which changes a relative positional relationship between a processing surface of the sample fixed to the sample table and an irradiation direction of an ion beam, and causes the tip portion to avoid irradiation with the ion beam during sample processing.

A plasma processing apparatus generating plasma by electromagnetic waves supplied into a processing container to process a substrate, includes an upper electrode disposed in an upper portion of the processing container, a power supply member connected to the upper electrode to supply electromagnetic waves to the upper electrode, a first shield member and a second shield member configured to electrically shield the upper electrode and the power supply member, a ring-shaped insulating member provided between the upper electrode and the first shield member and between the upper electrode and the second shield member, and having a plurality of gas through-holes penetrating inside thereof, and a conductive member covering a first end of the insulating member and electrically interconnecting the first shield member and the second shield member. The power supply member passes through an inner space in the insulating member and supplies electromagnetic waves to the upper electrode.

A photoelectric surface electron source includes a glass substrate configured to receive laser light incident from a substrate back surface to emit the laser light from a substrate main surface, a photoelectric surface provided on the substrate main surface and configured to receive the laser light and emit a photoelectron, a lens array disposed on the substrate back surface and including a plurality of microlenses for condensing the laser light toward the photoelectric surface, and a light shielding portion provided on the glass substrate. The light shielding portion has a back surface-side light shielding layer provided on a back surface-side light shielding surface interposed between the plurality of microlenses on the substrate back surface, and a main surface-side light shielding layer provided on a main surface-side light shielding surface.

Various embodiments herein relate to carriers for supporting one or more substrate as the substrates are passed through a processing apparatus. In many cases, the substrates are oriented in a vertical manner. The carrier may include a frame and vertical support bars that secure the glass to the frame. The carrier may lack horizontal support bars. The carrier may allow for thermal expansion and contraction of the substrates, without any need to provide precise gaps between adjacent pairs of substrates. The carriers described herein substantially reduce the risk of breaking the processing apparatus and substrates, thereby achieving a more efficient process. Certain embodiments herein relate to methods of loading substrates onto a carrier.

Disclosed herein are techniques directed toward a protective shutter for a charged particle microscope. An example apparatus at least includes a charged particle column and a focused ion beam (FIB) column, a gas injection nozzle coupled to a translation device, the translation device configured to insert the gas injection nozzle in close proximity to a stage, and a shutter coupled to the gas injection nozzle and arranged to be disposed between the sample and the SEM column when the gas injection nozzle is inserted in close proximity to the stage.

An ion beam cutting calibration system includes a sample cutting table, a coarse calibration device, a microscopic observation device, and a flip table. The flip table includes a flip plate, which is configured to drive the sample cutting table to swing in a vertical plane. The swing axis of the flip plate is collinear with the side edge of the top surface of the ion beam shielding plate close to the sample. Through the coordinated operation of the flip table, the microscopic observation device, the sample cutting table, and the coarse calibration device, the ion beam cutting calibration system avoids the problem that when the position relationship between the sample and the shielding plate is observed from multiple angles during calibration loading, the sample and the shielding plate are likely to be moved out of the field of vision of the microscope and out of focus.

Provided is a machining technology to obtain a desired machining content while suppressing a possibility of causing a redeposition in a machining surface. The invention is directed to provide an ion milling device which includes an ion source which emits an ion beam, a sample holder which holds a sample, and a sample sliding mechanism which slides the sample holder in a direction including a normal direction of an axis of the ion beam.

The present disclosure relates to a stage apparatus comprising: an object table configured to hold a substrate, the object table comprising an electrode configured to be charged by a power source and an electrical connection configured to electrically connect the electrode to the power source, and an electric field shield configured to shield at least a part of the electrical connection.

Provided herein are approaches for angle control of neutral reactive species ion beams. In one approach, a workpiece processing apparatus may include a plasma source operable to generate a plasma within a plasma chamber enclosed by a chamber housing, and an extraction plate coupled to the chamber housing. The extraction plate may include a recombination array having a plurality of channels operable to direct one or more radical beams to a workpiece at a non-zero angle relative to a perpendicular extending from a main surface of the workpiece.