A vapor deposition source that includes a substantially vertical plate to which first and second filament posts are coupled. The vapor deposition source also includes a filament having a first end and a second end. The filament provides a substantially concentric source of electrons. The first end of the filament is connected to the first filament post and the second end of the filament is connected to the second filament post. The first end of the filament is substantially vertically aligned with the second end of the filament when the filament is connected to the first and second posts.

A cathode mechanism of an electron emission source includes a crystal that includes an upper part being columnar, truncated conical, or their combined shape, and having a first surface to emit thermoelectrons, and a lower part, integrated with the upper part, having a second surface substantially parallel to the first surface, and a diameter larger than the maximum diameter of the upper part, a holding part that is a column having, in order from the holding part upper side, different inner diameters of a first diameter and a second diameter larger than the first one, and that holds the crystal in the state where the crystal first surface is projecting from the upper surface, and the crystal second surface contacts the holding part inside the column, and a retaining part that retains the crystal, at the back of the crystal lower part, not to be separated from the holding part.

An interlocking fastening upper electrode assembly having an improved fastening force is proposed. The assembly is configured such that a bush inserted into a silicon electrode protrudes above the silicon electrode, and the protruding portion is inserted into and coupled to an anodizing plate so as to suppress rotation of the bush, the assembly including: an inner and outer tab composite nut coupled to an assembly groove of the silicon electrode and an anodizing plate so as to prevent rotation; an inner and outer tab nut assembled in the assembly groove of the silicon electrode and fitted to the outside of the inner and outer tab composite nut; and an assembly module coupled through the inside of a through part of the anodizing plate and assembled with the inner and outer tab composite nut in order to fix the anodizing plate provided above the silicon electrode.

A liquid metal ion source device for using bismuth and an alloy of the bismuth is provided. The liquid metal ion source device includes a base formed of an electrically insulating material, two electrodes connected to the base and configured to supply current, a needle mounted on the base and configured to pass through the base, a filament including a pair of connection rods connected to the two electrodes, respectively, a pair of support rods formed to be extended from the pair of connection rods, respectively, and provided in a direction away from the base and towards the needle, and a filament head connecting the pair of support rods to one another and having a shape curved toward the base, and a reservoir configured to accommodate at least a portion of the filament head inside the reservoir and store a liquid metal.

An object of the present disclosure is to obtain an active gas generation apparatus capable of supplying a highly concentrated active gas from a gas ejection port to a processing space at a subsequent stage. Then, in the active gas generation apparatus (51) of the present disclosure, in a main dielectric space being a space in which an electrode dielectric film (30) and an electrode dielectric film (40) face each other, a region where electrode conductive films (31) and (41) overlap each other in a plan view is defined as a main discharge space (50). In an auxiliary dielectric space being a space where the electrode dielectric film 30 and a shield dielectric film 8 face each other, a region including a dielectric through hole (14) and a cover through hole (15) is defined as an auxiliary discharge space (58). The auxiliary discharge space (58) includes a part of a buffer space (9) above the shield dielectric film (8), and a path leading from the auxiliary discharge space (58) to the gas ejection port (61.62) is defined as an active gas flow path.

A method for evaluating a specimen includes positioning a detector in an inserted position in which a first distance between a tip of the detector and a plane extending along a surface of the specimen is less than a distance between the plane and a tip of charged particle beam optics. While maintaining the detector at the inserted position, the surface of the specimen is scanned by a primary beam that exits from the tip of the charged particle beam optics. The detector detects x-ray photons and/or charged particles emitted or reflected from the specimen as a result of scanning the specimen with the primary beam. After completion of the scanning, the detector is positioned at a retracted position in which a second distance between the tip of the detector and the plane exceeds a distance between the tip of the charged particle beam optics and the plane.

A plasma generating component for a process chamber includes a first pair of linear electrodes. Each electrode of the first pair of linear electrodes extends from a first edge of a plasma generating region of the plasma generating component to a second edge of the plasma generating region of the plasma generating component. Electrodes of the first pair of linear electrodes are substantially parallel. The plasma generating component further includes a second pair of linear electrodes, substantially parallel to the first pair of linear electrodes. The plasma generating component further includes a dielectric support to which the first pair of linear electrodes and the second pair of linear electrodes are secured.

A detecting method and a detecting equipment therefor are provided. The detecting method includes: inspecting whether a display panel has a defective position; after acquiring the defective position of the display panel by the inspecting, using a first focused ion beam generated by a first ion overhaul apparatus to cut the defective position of the display panel, so as to strip a defect at the defective position and observe morphology of defect; using a repair apparatus to perform a repair treatment on the defective position after the defect is stripped. An inspection apparatus for the inspecting of the defective position, the first ion overhaul apparatus and the repair apparatus are sequentially installed on the same production line.

A chemical vapor deposition source that includes at least one plate to which first and second electrical connection posts are coupled. The chemical vapor deposition source also includes a filament having a first end and a second end. The first end of the filament is electrically connected to the first electrical connection post and the second end of the filament is electrically connected to the second electrical connection post. The chemical vapor deposition source further includes at least one filament holder electrically insulated from the at least one plate. The at least one filament holder holds a portion of the filament between the first end and the second end.

In one embodiment, a supporting case includes a lower case member and an upper case member. The mounting substrate is pinched between a lower cylindrical supporting portion and a upper cylindrical supporting portion. Peripheral regions of the mounting substrate that are on a peripheral side with respect to a part pinched between the lower cylindrical supporting portion and the upper cylindrical supporting portion are positioned in a space defined by a bottom plate portion, a lower peripheral-wall portion, and the lower cylindrical supporting portion of the lower case member and a top lid portion, an upper peripheral-wall portion, and the upper cylindrical supporting portion of the upper case member.