A plasma processing apparatus includes a conductive mounting table, a conductive member, and a first insulating member. The conductive mounting table has a mounting portion on which a substrate is mounted and a stepped portion positioned lower than the mounting portion. The conductive member is disposed on the stepped portion and extends outward over an outer periphery of the mounting table. Further, a first insulating member is disposed on or above an upper surface of the conductive member.

The present disclosure describes an ion implantation system that includes a bushing designed to reduce the accumulation of IMP by-produces on the bushing's inner surfaces. The ion implantation system can include a chamber, an ion source configured to generate an ion beam, and a bushing coupling the ion source and the chamber. The bushing can include (i) a tubular body having an inner surface, a first end, and a second end and (ii) multiple angled trenches disposed within the inner surface of the tubular body, where each of the multiple angled trenches extends towards the second end of the tubular body.

Disclosed herein is an apparatus comprising: a first electrically conductive layer; a second electrically conductive layer; a plurality of optics element s between the first electrically conductive layer and the second electrically conductive layer, wherein the plurality of optics elements are configured to influence a plurality of beams of charged particles; a third electrically conductive layer between the first electrically conductive layer and the second electrically conductive layer; and an electrically insulating layer physically connected to the optics elements, wherein the electrically insulating layer is configured to electrically insulate the optics elements from the first electrically conductive layer, and the second electrically conductive layer.

An insulator for an ion source is positioned between the apertured ground electrode and apertured suppression electrode. The insulator has an elongate body having a first end and a second end, where one or more features are defined in the elongate body and increase a gas conductance path along a surface of the elongate body from the first end to the second end. One or more of the features is an undercut extending generally axially or at a non-zero angle from an axis of the elongate body into the elongate body. One of the features can be a rib extending from a radius of the elongate body.

A method of producing an induced pluripotent stem cell includes introducing into a somatic cell one or more non-viral expression vectors. The vectors include one or more of an Oct family gene, a Klf family gene, a Sox family gene, a Myc family gene, a Lin family gene, and Nanog gene. The somatic cell is then cultured in a medium that supports pluripotent stem cells. At least a portion of the one or more introduced non-viral expression vectors is not substantially integrated in the chromosome.

The present disclosure describes an ion implantation system that includes a bushing designed to reduce the accumulation of IMP by-produces on the bushing's inner surfaces. The ion implantation system can include a chamber, an ion source configured to generate an ion beam, and a bushing coupling the ion source and the chamber. The bushing can include (i) a tubular body having an inner surface, a first end, and a second end and (ii) multiple angled trenches disposed within the inner surface of the tubular body, where each of the multiple angled trenches extends towards the second end of the tubular body.

A liquid treatment apparatus includes a flow channel, first and second electrodes at least part of each of which is disposed within the flow channel, an insulator, a gas supply device, and a power supply source that applies a voltage between the first and second electrodes and generates plasma. The insulator has a tubular shape and an opening on an end surface of the insulator, and surrounds a lateral surface of the first electrode with a space interposed between the insulator and the first electrode. The gas supply device supplies and ejects a gas into the liquid via the opening. At least part of the flow channel extends in a first direction which is inclined with respect to a horizontal direction so that the liquid flows obliquely upward with respect to the horizontal direction. The opening is positioned within the at least part of the flow channel.

Disclosed herein is an apparatus comprising: a first electrically conductive layer, a second electrically conductive layer; a plurality of optics element s between the first electrically conductive layer and the second electrically conductive layer, wherein the plurality of optics elements are configured to influence a plurality of beams of charged particles; a third electrically conductive layer between the first electrically conductive layer and the second electrically conductive layer; and an electrically insulating layer physically connected to the optics elements, wherein the eclectically insulating layer is configured to electrically insulate the optics elements from the first electrically conductive layer, and the second electrically conductive layer.

Embodiments of systems, devices, and methods relate to an electrode standoff isolator. An example electrode standoff isolator includes a plurality of adjacent insulative segments positioned between a proximal end and a distal end of the electrode standoff isolator. A geometry of the adjacent insulative is configured to guard a surface area of the electrode standoff isolator against deposition of a conductive layer of gaseous phase materials from a filament of an ion source.

In an insulating structure which insulates an electrode provided inside a vacuum region of an ion implanter from another member and supports the electrode, a first insulating member supports the electrode. A second insulating member is fitted to the first insulating member to suppress deposition of contamination particles to the first insulating member. The second insulating member is formed of a material having a hardness lower than that of the first insulating member. A Vickers hardness of an outer surface of the second insulating member is 5 GPa or less. Bending strength of the second insulating member is 100 MPa or less. The second insulating member is formed of a material including at least one of boron nitride, a porous ceramic, and a resin.