A method for implanting high charge state ions into a workpiece while mitigating trace metal contamination includes generating desired ions at a first charge state from a desired species in an ion source, as well as generating trace metal ions of a contaminant species in a first ion beam. A charge-to-mass ratio of the desired ions and the trace metal ions is equal. The desired ions and trace metal ions are extracted from the ion source. At least one electron stripped from the desired ions to define a second ion beam of the desired ions at a second charge state and the trace metal ions. Only the desired ions from the second ion beam are selectively passed only through a charge selector to define a final ion beam of the desired ions at the second charge state and no trace metal ions, and the desired ions of the second charge state are implanted into a workpiece.

An energy filter has a plurality of sector magnets which are configured symmetrically with respect to a symmetry plane, and forms a real image on the symmetry plane. The energy filter include: an entrance aperture provided with a slit having a longitudinal direction in a direction perpendicular to an energy dispersion direction; and a hexapole and a quadrupole disposed on the symmetry plane.

An ion implanter having a beam park device on the way of a beamline through which an ion beam is transported toward a wafer is provided. The beam park device includes a pair of park electrodes which faces each other across the beamline, and a beam dump which is provided away from the beamline in a facing direction of the pair of park electrodes and on a downstream side of the pair of park electrodes in a beamline direction. At least one of the pair of park electrodes includes a plurality of electrode bodies which are disposed to be spaced apart from each other in a predetermined direction perpendicular to both a direction in which the beamline extends and the facing direction, and each of the plurality of electrode bodies extends from an upstream side toward the downstream side in the beamline direction.

A charged particle beam application apparatus includes a beam separator. The beam separator includes a first magnetic pole, a second magnetic pole facing the first magnetic pole, a first electrode and a second electrode that extend along an optical axis of a primary beam and are arranged in a first direction perpendicular to the optical axis, on a first surface of the first magnetic pole which faces the second magnetic pole, and a third electrode and a fourth electrode that extend along the optical axis and face the first electrode and the second electrode, respectively, on a second surface of the second magnetic pole which faces the first magnetic pole.

A bonded wafer including an ion implantation step using a batch processing ion implanter, wherein the ion implantation step is performed by irradiating a bond wafer with a light element ion beam without forming an insulator film on the bond wafer surface or through an insulator film having a thickness of 50 nm or less formed on the bond wafer surface at an implantation angle inclined from a crystal axis of the bond wafer; and the bond wafer surface is irradiated with the center of the light element ion beam shining at a position on the bond wafer surface shifted from the center of the bond wafer parallel to the center of a rotor by a predetermined amount providing a bonded wafer to prevent degradation of the radial uniformity of ion implantation depth and manufacture a bonded wafer with excellent radial uniformity of thickness of a thin film after delamination.

A mass analyzer includes a mass analyzing magnet that applies a magnetic field to ions extracted from an ion source to deflect the ions, a mass analyzing slit that is provided downstream of the mass analyzing magnet and allows an ion of a desired ion species among the deflected ions to selectively pass, and a lens device that is provided between the mass analyzing magnet and the mass analyzing slit and applies a magnetic field and/or an electric field to the ion beam to adjust the convergence or divergence of a ion beam. The mass analyzer changes a focal point of the ion beam in a predetermined adjustable range between an upstream side and a downstream side of the mass analyzing slit with the lens device to adjust mass resolution.

An energy filter has a plurality of sector magnets which are configured symmetrically with respect to a symmetry plane, and forms a real image on the symmetry plane. The energy filter include: an entrance aperture provided with a slit having a longitudinal direction in a direction perpendicular to an energy dispersion direction; and a hexapole and a quadrupole disposed on the symmetry plane.

A dual beam system having a charged particle beam (CPB) lens and an ion beam column can operate in an analysis mode. In the analysis mode, an ion beam from the ion beam column can be deflected by the CPB into one or more component beams including a primary ion beam and one or more non-primary ion beams. The dual-beam system can identify the ion species of the non-primary ion beams.

An apparatus is provided. The apparatus includes a beam current measuring device and a first electrode. The beam current measuring device is retractably movable into an ion beam trajectory so as to measure an ion beam current. The first electrode is disposed immediately upstream of the beam current measuring device in an ion beam transport channel. The first electrode serves both as a suppressor electrode for repelling secondary electrons released from the beam current measuring device, back toward the beam current measuring device, and as a beam optical element other than the suppressor electrode.

A bonded wafer including an ion implantation step using a batch processing ion implanter, wherein the ion implantation step is performed by irradiating a bond wafer with a light element ion beam without forming an insulator film on the bond wafer surface or through an insulator film having a thickness of 50 nm or less formed on the bond wafer surface at an implantation angle inclined from a crystal axis of the bond wafer; and the bond wafer surface is irradiated with the center of the light element ion beam shining at a position on the bond wafer surface shifted from the center of the bond wafer parallel to the center of a rotor by a predetermined amount providing a bonded wafer to prevent degradation of the radial uniformity of ion implantation depth and manufacture a bonded wafer with excellent radial uniformity of thickness of a thin film after delamination.