Provided herein are approaches for decreasing particle generation in an electrostatic lens. In some embodiments, an ion implantation system may include an electrostatic lens including an entrance for receiving an ion beam and an exit for delivering the ion beam towards a target, the electrostatic lens including a first terminal electrode, a first suppression electrode, and a first ground electrode disposed along a first side of an ion beamline, wherein the first ground electrode is grounded and positioned adjacent the exit. The electrostatic lens may further include a second terminal electrode, a second suppression electrode, and a second ground electrode disposed along a second side of the ion beamline, wherein the second ground electrode is grounded and positioned adjacent the exit. The implantation system may further include a power supply operable to supply a voltage and a current to the electrostatic lens for controlling the ion beam.

An ion source is provided that includes a gas source for supplying a gas, and an ionization chamber defining a longitudinal axis extending therethrough and including an exit aperture along a side wall of the ionization chamber. The ion source also includes one or more extraction electrodes at the exit aperture of the ionization chamber for extracting ions from the ionization chamber in the form of an ion beam. At least one of the extraction electrodes comprises a set of discrete rods forming a plurality of slits in the at least one extraction electrode for enabling at least one of increasing a current of the ion beam or controlling an angle of extraction of the ion beam from the ionization chamber. Each rod in the set of discrete rods is parallel to the longitudinal axis of the ionization chamber.

An apparatus is provided. The apparatus may include a main chamber, an entrance tunnel, the entrance tunnel having an entrance axis extending into the main chamber; an exit tunnel, connected to the main chamber and defining an exit axis, wherein the entrance tunnel and the exit tunnel define a beam bend of less than 25 degrees therebetween, and an electrode assembly, disposed in the main chamber, and defining a beam path between the entrance tunnel and the exit tunnel. The electrode assembly may include an upper electrode, disposed on a first side of the beam path, and a plurality of lower electrodes, disposed on a second side of the beam path, the plurality of lower electrodes comprising at least three electrodes.

The present disclosure relates to semiconductor devices, specifically discloses a method and an apparatus for ion implantation. The above method may comprise: generating a particle beam that satisfies the implantation energy, wherein the particle beam comprises the target ion and the impurity particle; applying a first deflection magnetic field to the particle beam to deflect the particle beam, and applying a second deflection magnetic field to the deflected particle beam to cause a second deflection of the particle beam to separate the target ion from the impurity particle; and implanting the separated target ion into the semiconductor wafer.

An H.sub.3.sup.+ ion is used as an ion beam to achieve improvement in focusing capability influencing observed resolution and machining width, improvement in the beam stability, and a reduction in damage to the sample surface during the beam irradiation, in the process of observation and machining of the sample surface by the ion beam. The H.sub.3.sup.+ ion can be obtained by use of a probe current within a voltage range 21 around a second peak 23 occurring when an extracted voltage is applied to a needle-shaped emitter tip with an apex terminated by three atoms or less, in an atmosphere of hydrogen gas.

In a first cross section along an electron ray that passes between an inner curved surface and an outer curved surface of a beam bender, the curvature of the surfaces are fixed, and the center of the curvature of the surfaces are set so as to match each other. In a second cross section perpendicular to the electron ray, the curvature of the surfaces are fixed, and the center of curvature of the surfaces are set so as to match each other. The radius of the curvature of the surface in the second cross section is set to be larger than that of the surface in the first cross section. The radius of curvature of the surface in the second cross section is set to be larger than that of the surface in the first cross section.

Provided herein are approaches for increasing operational range of an electrostatic lens. An electrostatic lens of an ion implantation system may receive an ion beam from an ion source, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion beam line and a second plurality of conductive beam optics disposed along a second side of the ion beam line. The ion implantation system may further include a power supply in communication with the electrostatic lens, the power supply operable to supply a voltage and a current to at least one of the first and second plurality of conductive beam optics, wherein the voltage and the current deflects the ion beam at a beam deflection angle, and wherein the ion beam is accelerated and then decelerated within the electrostatic lens.

A Wien filter and a charged particle beam imaging apparatus are provided. The Wien filter Wien filter, including a Wien filter body which includes: an electrostatic deflector, including at least one pair of electrodes, respective two electrodes in each pair of which are opposite to each other, each electrode including an electrode body constructed in an arc-shaped form, and respective electrode bodies of respective two electrodes in each pair of the at least one pair of electrodes being arranged concentrically with and opposite to each other in a diameter direction, and the at least one pair of electrodes being configured to generate respective electric fields by cooperation of the respective two electrodes in each pair of the at least one pair of electrodes, in the condition of respective bias voltages applied individually thereon; and a magnetic deflector, including at least one pair of magnetic poles, respective two magnetic poles in each pair of which are opposite to each other, each magnetic pole including a magnetic pole body constructed in an arc-shaped form, and respective magnetic pole bodies of respective two magnetic poles in each pair of the at least one pair of magnetic poles being arranged concentrically with and opposite to each other in the diameter direction, and the magnetic pole bodies of the at least one pair of magnetic poles in the magnetic deflector and the electrode bodies of the at least one pair of electrodes in the electrostatic deflector being arranged concentrically and spaced apart from each other in a circumferential direction, and the at least one pair of magnetic poles being configured to generate respective magnetic fields by cooperation of respective two magnetic poles in each pair of the at least one pair of magnetic poles; a resultant electric field formed collectively by all of the respective electric fields is perpendicular to a resultant magnetic field formed collectively by all of the respective magnetic fields; and each electrode is also provided with a respective first protrusion extending radially inwards from a radial inner side of the respective electrode body thereof, and each magnetic pole is also provided with a second protrusion extending radially inwards from a radial inner side of the respective magnetic pole body thereof.

The purpose of the present invention is to provide a charged-particle beam device capable of stable performance of processes such as a measurement or test, independent of fluctuations in sample electric electric potential or the like. To this end, this charged-particle beam device comprises an energy filter for filtering the energy of charged particles released from the sample and a deflector for deflecting the charged particles released from the sample toward the energy filter. A control device generates a first image on the basis of the output of a detector, adjusts the voltage applied to the energy filter so that the first image reaches a prescribed state, and calculates deflection conditions for the deflector on the basis of the post-adjustment voltage applied to the energy filter.

The present disclosure relates to a method includes generating ions with an ion source of an ion implantation apparatus based on an ion implantation recipe. The method includes accelerating the generated ions based on an ion energy setting in the ion implantation recipe and determining an energy spectrum of the accelerated ions. The method also includes analyzing a relationship between the determined energy spectrum and the ion energy setting. The method further includes adjusting at least one parameter of a final energy magnet (FEM) of the ion implantation apparatus based on the analyzed relationship.