A scanning magnet is positioned downstream of a mass resolving magnet of an ion implantation system and is configured to control a path of an ion beam downstream of the mass resolving magnet for a scanning or dithering of the ion beam. The scanning magnet has a yoke having a channel defined therein. The yoke is ferrous and has a first side and a second side defining a respective entrance and exit of the ion beam. The yoke has a plurality of laminations stacked from the first side to the second side, wherein at least a portion of the plurality of laminations associated with the first side and second side comprise one or more slotted laminations having plurality of slots defined therein.

An ion implantation system and method provide a non-uniform flux of a ribbon ion beam. A spot ion beam is formed and provided to a scanner, and a scan waveform having a time-varying potential is applied to the scanner. The ion beam is scanned by the scanner across a scan path, generally defining a scanned ion beam comprised of a plurality of beamlets. The scanned beam is then passed through a corrector apparatus. The corrector apparatus is configured to direct the scanned ion beam toward a workpiece at a generally constant angle of incidence across the workpiece. The corrector apparatus further comprises a plurality of magnetic poles configured to provide a non-uniform flux profile of the scanned ion beam at the workpiece.

A high temperature plasma generating system has a ceramic magnetron insulator joined to a frustoconical waveguide reflector. A cavity magnetron tube is joined to the frustoconical waveguide reflector. An antenna is set in the cavity magnetron tube and extending through the ceramic magnetron insulator. Applying an electrical current to the magnetron creates multipactor in the frustoconical waveguide reflector generating plasma focused at the tip of the magnetron antenna.

The present disclosure relates to semiconductor devices, specifically discloses a method and an apparatus for ion implantation. The above method may comprise: generating a particle beam that satisfies the implantation energy, wherein the particle beam comprises the target ion and the impurity particle; applying a first deflection magnetic field to the particle beam to deflect the particle beam, and applying a second deflection magnetic field to the deflected particle beam to cause a second deflection of the particle beam to separate the target ion from the impurity particle; and implanting the separated target ion into the semiconductor wafer.

A magnetic lens is disclosed, which includes: a magnetic yoke, an exciting coil and a power supply controlling system. The magnetic yoke is at outside of the exciting coil and surrounds the coil; the exciting coil is made up of litz wires; the power supply controlling system is arranged to supply power to the exciting coil and control the flow directions and magnitudes of the currents in the exciting coil. A method for controlling the magnetic lens is also disclosed.

In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.

A system combination includes a particle beam system and a light-optical system. The particle beam system can be an individual particle beam system or a multiple particle beam system. A light entry mechanism can provided at a branching site of a beam tube arrangement within a beam switch. A light beam of the light-optical system can enter into the beam tube arrangement through the light entry mechanism such that the light beam impinges, in substantially collinear fashion with particle radiation, on an object to be inspected. Parts of the light-optical beam path and parts of the particle-optical beam path can extend parallel to one another or overlap with one another. This arrangement can allow light of the light-optical system to be incident in perpendicular fashion on an object to be inspected, optionally without impairing the particle-optical resolution of the particle beam system.

A charged particle beam device includes a charged particle source which emits a charged particle beam radiated on a sample; a condenser lens system which has at least one condenser lens focusing the charged particle beam at a predetermined demagnification; a deflector which is positioned between a condenser lens of a most downstream side and a charged particle source in the condenser lens system, and moves a virtual position of the charged particle source; and a control unit which controls the deflector and the condenser lens system. The control unit controls the deflector to move the virtual position of the charged particle source to a position of suppressing a deviation, which is caused by a change of the demagnification of the condenser lens system, of a center trajectory of the charged particle beam downstream of the condenser lens system.

An ion beam treatment or implantation system includes an ion source emitting a plurality of parallel ion beams having a given spacing. A first lens magnet having a non-uniform magnetic field receives the plurality of ion beams from the ion source and focuses the plurality of ion beams toward a common point. The system may optionally include a second lens magnet having a non-uniform magnetic field receiving the ion beams focused by the first lens magnet and redirecting the ion beams such that they have a parallel arrangement having a closer spacing than said given spacing in a direction toward a target substrate.

An exposure device is provided, including: a body tube depressurized to produce a vacuum state therein; a plurality of charged particle beam sources that are provided in the body tube, and emit a plurality of charged particle beams in a direction of extension of the body tube; a plurality of electromagnetic optical elements, each being corresponding to one of the plurality of charged particle beams in the body tube, and controls the one of the plurality of charged particle beams; first and second partition walls that are arranged separately from each other in the direction of extension in the body tube, and form non-vacuum spaces between at least parts of the first and second partition walls; and a depressurization pump that depressurizes a non-vacuum space that contacts the first partition wall and a non-vacuum space that contacts the second partition wall to an air pressure between zero and atmospheric pressure.