Provided is a projection electron beam application apparatus suitable for use in semiconductor manufacturing lines. An electron optical system of the electron beam application apparatus includes a mirror aberration corrector 106 disposed perpendicular to an optical axis 109, a plurality of magnetic field sectors 104 by which an orbit of electrons is deviated from the optical axis to make the electrons incident on the mirror aberration corrector 106, and the orbit of the electrons emitted from the mirror aberration corrector 106 is returned to the optical axis, and a doublet lens 105 disposed between adjacent magnetic field sectors along the orbit of the electrons. The plurality of magnetic field sectors have the same deflection angle for deflecting the orbit of the electrons, and the doublet lens is disposed such that an object plane and an image plane thereof are respectively central planes of the adjacent magnetic field sectors along the orbit of the electrons.

The present invention is to generate a spatially phase modulated electron wave. A laser radiating apparatus, a spatial light phase modulator, and a photocathode are provided. The photocathode has a semiconductor film having an NEA film formed on a surface thereof, and a thickness of the semiconductor film is smaller than a value obtained by multiplying a coherent relaxation time of electrons in the semiconductor film by a moving speed of the electrons in the semiconductor film. According to the configuration, a spatial distribution of phase and a spatial distribution of intensity of spatial phase modulated light are transferred to an electron wave, and the electron wave emitted from an NEA film is modulated into the spatial distribution of phase and the spatial distribution of intensity of the light. Since the spatial distribution of phase of the light can be modulated as intended by a spatial phase modulation technique for light, it is possible to generate an electron wave having a spatial distribution of phase modulated as intended.

A system and corresponding method for electron cryomicroscopy, comprising: a field-emission gun for generating an electron beam, the field-emission gun being energized, in use, to generate a 80 keV to 120 keV electron beam which is emitted into a vacuum enclosure and towards a specimen holder; the vacuum enclosure containing, at least in part: an objective lens for focusing an image of the specimen, the objective lens being disposed in the path of the electron beam and having a chromatic aberration coefficient, Cc, selected to achieve a resolution value better than a desired amount; the specimen holder for holding a specimen, the specimen holder being disposed in the path of the electron beam; a cryostage for cooling a specimen; a cryo-shield for surrounding a specimen and reducing an ice contamination rate of the specimen; and a direct electron detector comprising an array of pixels, each pixel capable of detecting an incident electron that has passed through a sample and struck the pixel.

Disclosed herein are electron microscopes with improved imaging. An example electron microscope at least includes an illumination system, for directing a beam of electrons to irradiate a specimen, an elongate beam conduit, through which the beam of electrons is directed; a multipole lens assembly configured as an aberration corrector, and a detector for detecting radiation emanating from the specimen in response to said irradiation, wherein at least a portion of said elongate beam conduit extends at least through said aberration corrector and has a composite structure comprising intermixed electrically insulating material and electrically conductive material, wherein the elongate beam conduit has an electrical conductivity σ and a thickness t, with σt<0.1 Ω.sup.−1.

One modified source-conversion unit and one method to reduce the Coulomb Effect in a multi-beam apparatus are proposed. In the modified source-conversion unit, the aberration-compensation function is carried out after the image-forming function has changed each beamlet to be on-axis locally, and therefore avoids undesired aberrations due to the beamlet tilting/shifting. A Coulomb-effect-reduction means with plural Coulomb-effect-reduction openings is placed close to the single electron source of the apparatus and therefore the electrons not in use can be cut off as early as possible.

There is provided a charged particle beam system for reducing phase variations in a charged particle beam due to sixth order three-lobe aberration. The charged particle beam system (100) is equipped with an aberration corrector (30) for correcting aberrations in the optical system, and includes: an aberration measuring section (44) for measuring sixth order three-lobe aberration of sixth order geometric aberration, a computing section (46) for computing the magnitude of at least one of fourth order three-lobe aberration of fourth order geometric aberration and three-fold astigmatism of second order geometric aberration for reducing phase variations in the charged particle beam due to the sixth order three-lobe aberration on the basis of the measured sixth order three-lobe aberration, and a controller (48) for controlling the aberration corrector (30) to produce at least one of the fourth order three-lobe aberration and the three-fold astigmatism on the basis of the computed magnitude.

A charged particle beam apparatus for inspecting a specimen with a plurality of beamlets is described. The charged particle beam apparatus includes a charged particle beam emitter (105) for generating a charged particle beam (11) propagating along an optical axis (A) and a multi-beamlet generation- and correction-assembly (120), including a first multi-aperture electrode (121) with a first plurality of apertures for creating the plurality of beamlets from the charged particle beam, at least one second multi-aperture electrode (122) with a second plurality of apertures of varying diameters for the plurality of beamlets for providing a field curvature correction, and a plurality of multipoles (123) for individually influencing each of the plurality of beamlets, wherein the multi-beamlet generation- and correction-assembly (120) is configured to focus the plurality of beamlets to provide a plurality of intermediate beamlet crossovers. The charged particle beam apparatus further includes an objective lens (150) for focusing each of the plurality of beamlets to a separate location on the specimen, and a single transfer lens (130) for beamlet collimation arranged between the multi-beamlet generation- and correction-assembly and the objective lens. Further, a method of inspecting a specimen with a charged particle beam apparatus is described.

An aberration corrector has two stages of dodecapole (12-pole) elements each of which has first through twelfth poles arranged in this order. Exciting coils of the (4n+1)th poles and the exciting coils of the (4n+4)th poles are connected with a first reversible power supply in series (where n=0, 1, 2) to produce magnetic fields which are identical in absolute value but mutually opposite in sense relative to the optical axis within a plane perpendicular to the axis. The exciting coils of the (4n+3)th poles and the exciting coils of the (4n+2)th poles are connected with a second reversible power supply in series to produce magnetic fields which are identical in absolute value but mutually opposite in sense relative to the optical axis within the plane perpendicular to the axis.

A multi-beam apparatus for multi-beam inspection with an improved source conversion unit providing more beamlets with high electric safety, mechanical availability and mechanical stabilization has been disclosed. The source-conversion unit comprises an image-forming element array having a plurality of image-forming elements, an aberration compensator array having a plurality of micro-compensators, and a pre-bending element array with a plurality of pre-bending micro-deflectors. In each of the arrays, adjacent elements are placed in different layers, and one element may comprise two or more sub-elements placed in different layers. The sub-elements of a micro-compensator may have different functions such as micro-lens and micro-stigmators.

The present invention provides an electrode assembly comprising two or more electrodes arranged around a primary axis forming a non-cylindrical channel space. General electronic apparatus/device, particularly apparatus of charged-particle beam such as electron microscope, may use the electrode assembly to create an optimized pattern of electrical field within non-cylindrical channel space. When the electrode assembly is used as a beam deflector in a magnetic objective lens, the electrical field within the central channel space can be co-optimized with the magnetic field for reducing aberration(s) such as distortion, field curvature, astigmatism, and chromatic aberration, after the beam passes through the central channel space.