A support for an electron microscopy sample, the support comprising a metallic foil having one or more holes therethrough wherein thickness of the metallic foil is less than 50 nm and/or the mean linear intercept grain size is 50 nm or less, wherein the ratio of the diameter of each hole to the thickness of the metallic foil is 15:1 or less, and wherein the metallic foil consists of either (a) one or more metals selected from transition metals, aluminium and beryllium, or an alloy thereof; or (b) degenerately doped silicon wherein the dopant element is selected from boron, aluminium, boron and arsenic at a concentration of 10.sup.20 atoms/cm.sup.3 or higher.

Various embodiments herein relate to methods and apparatus for etching recessed features on a semiconductor substrate. The techniques described herein can be used to form high quality recessed features with a substantially vertical profile, low bowing, low twisting, and highly circular features. These high quality results can be achieved with a high degree of selectivity and a relatively high etch rate. In various embodiments, etching involves exposing the substrate to plasma generated from a processing gas that includes a chlorine source, a carbon source, a hydrogen source, and a fluorine source. The chlorine source may have particular properties. In some cases, particular chlorine sources may be used. Etching typically occurs at low temperatures, for example at about 25C or lower.

A semiconductor processing chamber may include a remote plasma region, and a processing region fluidly coupled with the remote plasma region. The processing region may be configured to house a substrate on a support pedestal. The support pedestal may include a first material at an interior region of the pedestal. The support pedestal may also include an annular member coupled with a distal portion of the pedestal or at an exterior region of the pedestal. The annular member may include a second material different from the first material.

A ground shield of a processing chamber includes a ceramic body including a ground shield plate, a raised edge extending from an upper surface of the ground shield plate, and a hollow shaft that extends from a lower surface of the ground shield plate. An electrically conductive layer is formed on and conforms to at least the upper surface of the ground shield plate and an interior surface of the hollow shaft. A first protective layer is formed on at least the electrically conductive layer. A heater plate of a heater first within the raised edge and on the ground shield plate such that the heater plate is disposed on top of the first protective layer, the electrically conductive layer, and the upper surface of the ground shield plate.

A sample holder transfer device is for use in cryo-microscopy and for transferring a sample holder to an analysing or processing unit. The sample holder is configured for holding a sample carrier carrying a sample. The sample holder transfer device is configured to receive the sample holder, the sample holder including a sample carrier fixing element. At least one section of the sample carrier fixing element is configured, when in a first position, to fix the sample carrier to the sample holder, and, when in a second position, to release the sample carrier or provide access to an area where the sample carrier is to be placed. The sample holder transfer device includes a switching mechanism operable to switch the at least one section of the sample carrier fixing element of the sample holder from the first to the second position or from the second to the first position.

A method of doping a substrate. The method may include providing a substrate in a process chamber. The substrate may include a semiconductor structure, and a dopant layer disposed on a surface of the semiconductor structure. The method may include maintaining the substrate at a first temperature for a first interval, the first temperature corresponding to a vaporization temperature of the dopant layer. The method may further include rapidly cooling the substrate to a second temperature, less than the first temperature, and heating the substrate from the second temperature to a third temperature, greater than the first temperature.

A method of doping a substrate. The method may include providing a substrate in a process chamber. The substrate may include a semiconductor structure, and a dopant layer disposed on a surface of the semiconductor structure. The method may include maintaining the substrate at a first temperature for a first interval, the first temperature corresponding to a vaporization temperature of the dopant layer. The method may further include rapidly cooling the substrate to a second temperature, less than the first temperature, and heating the substrate from the second temperature to a third temperature, greater than the first temperature.

An apparatus for plasma etching having an electrostatic chuck including a base layer, a bonding layer, an adsorption layer including a plurality of protrusions on the bonding layer and contacting a lower surface of a substrate, and an edge ring spaced apart from and surrounding a lateral surface of the substrate; a plurality of coolant suppliers injecting a coolant between the plurality of protrusions; a plurality of pipes supplying the coolant to the plurality of coolant suppliers to circulate the coolant in a predetermined direction; a cooling device in which the plasma etching process includes first and second operations, wherein the coolant is injected to cause the electrostatic chuck to reach a first temperature during the first operation, and reach a second temperature during the second operation; and a controller controlling a valve connected to the plurality of pipes to determine a circulation direction of the coolant.

Electrostatic chucks (ESCs) for plasma processing chambers, and methods of fabricating ESCs, are described. In an example, a substrate support assembly includes a cooling bottom plate, a ceramic top plate, and a bond layer between the ceramic top plate and the cooling bottom plate, the ceramic top plate in direct contact with the bond layer, and the bond layer in direct contact with the cooling bottom plate. A detachable shaft is coupled to the cooling bottom plate by a plurality of bolts at a side of the cooling bottom plate opposite the bond layer.

Various embodiments herein relate to methods, apparatus, and systems for depositing a boron-based ceramic film on a substrate. Advantageously, the boron-based ceramic films described herein can be formed at relatively low temperatures (e.g., about 600C or less), while still achieving very high quality materials that exhibit good mechanical strength (e.g., high hardness and Young's modulus), good etch selectivity, amorphous morphology, etc. The films herein also have low hydrogen content, low oxygen content, and low halide content. In many cases, the films may be formed through a reaction between a boron halide and a saturated or unsaturated hydrocarbon, in the presence of plasma.