A writing apparatus of the embodiments of the present invention is a writing apparatus that irradiates a predetermined position on an irradiation target with multiple charged particle beams to write a predetermined pattern on the irradiation target, the apparatus comprising: a beam generation mechanism configured to generate multiple charged particle beams; a blanking aperture mechanism configured to perform blanking control of the generated multiple charged particle beams; a stage configured to have the irradiation target mounted thereon and to be movable; and a controller configured to control the writing apparatus, wherein the controller controls the blanking aperture mechanism and the stage to move the stage in an in-plane direction of a surface of the irradiation target during a blanking period in preparatory phase for writing.

A system for storing and shipping samples for cryo-electron microscopy. The system comprising a cassette puck and support platform that accepts commercial cryo-EM sample cassettes and is compatible to a substantial extent with tools used in cryocrystallography. The system can also work with existing Cryo-EM storage and transport puck and cane systems. The cassette puck comprising a receptacle for holding one or more cassettes and a plurality of holes and grooves. The holes and grooves being configured for use with other tools such as tongs, support platforms, and canes.

The invention relates to a workstation (1), a preparation station (2) and a method for manipulating an electron microscopy grid assembly (3). The workstation (1) comprises a first compartment (101), a first gas inlet (102) for generating an overpressure in the first compartment (101), a first glove (104) and a second glove (105), each being fixed in a respective opening (106, 107) of the workstation (1), wherein the first glove (104) and the second glove (105) are movable in the first compartment (101) to manipulate objects in the first compartment (101), wherein the workstation (1) comprises a port (109) for providing a transfer device (4) for an electron microscopy grid assembly (3) in the first compartment (101). The preparation station (2) comprises a coolant reservoir (201, 202), a first part (210) configured to hold a shuttle (6) for holding an electron microscopy grid assembly (3) in a fixed orientation, wherein the preparation station (2) is configured such that the first part (210) is submergable in the cryogenic coolant when the coolant reservoir (201, 202) contains the cryogenic coolant.

A stage apparatus includes a lower stage that moves in a Y-axis direction, an upper stage that floats from the lower stage and moves at least in an X-axis direction orthogonal to the Y-axis direction, a heat exchanger that cools a Y table of the lower stage with a refrigerant, and a control device that controls an inclination of the lower stage with reference to the Y table cooled by the heat exchanger.

A charged particle beam apparatus includes: a specimen chamber; a specimen holder that is disposed in the specimen chamber; a specimen exchange chamber that is connected to the specimen chamber; a transporting mechanism that transports a specimen between the specimen chamber and the specimen exchange chamber; a first temperature sensor that measures a temperature of the specimen holder; a second temperature sensor that measures a temperature of the transporting mechanism; and a control unit. The control unit: calculates a temperature difference between the specimen holder and the transporting mechanism based on the temperature of the specimen holder and the temperature of the transporting mechanism when the control unit has received an instruction to transport a specimen; determining whether the temperature difference is a threshold or more; and stopping transportation of a specimen when the control unit has determined that the temperature difference is the threshold or more.

A system and corresponding method for electron cryomicroscopy, comprising: a field-emission gun for generating an electron beam, the field-emission gun being energized, in use, to generate a 80 keV to 120 keV electron beam which is emitted into a vacuum enclosure and towards a specimen holder; the vacuum enclosure containing, at least in part: an objective lens for focusing an image of the specimen, the objective lens being disposed in the path of the electron beam and having a chromatic aberration coefficient, Cc, selected to achieve a resolution value better than a desired amount; the specimen holder for holding a specimen, the specimen holder being disposed in the path of the electron beam; a cryostage for cooling a specimen; a cryo-shield for surrounding a specimen and reducing an ice contamination rate of the specimen; and a direct electron detector comprising an array of pixels, each pixel capable of detecting an incident electron that has passed through a sample and struck the pixel.

A sample cartridge carrier apparatus is coupled with a focused ion beam processing apparatus (FIB processing apparatus). A guide mechanism is configured to guide a series of movements of a sample cartridge holder to allow a sample cartridge to be held by a carrier base on a sub stage. Sub cooling equipment is configured to cool the sample cartridge via the sub stage. A carrier mechanism carries the carrier base between the sub stage and a main stage.

An etching process method is provided that includes outputting a first high frequency power from a first high frequency power supply in a cryogenic temperature environment where the temperature of a substrate is controlled to be less than or equal to −35° C., supplying a sulfur fluoride-containing gas and a hydrogen-containing gas, generating a plasma from the supplied sulfur fluoride-containing gas and hydrogen-containing gas, and etching a laminated film made up of laminated layers of silicon-containing films having different compositions with the generated plasma.

The present invention relates to an apparatus and method for forming a silicon nitride film by performing plasma enhanced atomic layer deposition (PE-ALD) employing very high frequency (VHF). An atomic layer deposition apparatus according to an embodiment of the present invention may comprise: a chamber providing a space in which a process is performed; a substrate support unit for supporting a substrate in the chamber; a gas supply unit for supplying gas to the chamber; an exhaust unit for discharging gas in the chamber; a plasma generation unit installed in the chamber to generate plasma in the chamber; and a VHF (very high frequency) power source for applying a VHF band signal to the plasma generation unit.

A semiconductor manufacturing system or process, such as an ion implantation system, apparatus and method, including a component or step for heating a semiconductor workpiece are provided. An optical heat source emits light energy to heat the workpiece. The optical heat source is configured to provide minimal or reduced emission of non-visible wavelengths of light energy and emit light energy at a wavelength in a maximum energy light absorption range of the workpiece.