An electrostatic chuck includes a base having a surface on which an object is to be placed, and a through hole extending through the base, wherein a porous material containing angular ceramic particles is disposed in the through hole.

The present disclosure relates to methods and systems for chucking in substrate processing chambers. In one implementation, a method of chucking one or more substrates in a substrate processing chamber includes applying a chucking voltage to a pedestal. A substrate is disposed on a support surface of the pedestal. The method also includes ramping the chucking voltage from the applied voltage, detecting an impedance shift while ramping the chucking voltage, determining a corresponding chucking voltage at which the impedance shift occurs, and determining a refined chucking voltage based on the impedance shift and the corresponding chucking voltage.

Systems and methods for processing workpieces, such as semiconductor workpieces are provided. One example embodiment is directed to a processing system for processing a plurality of workpieces. The processing system can include a loadlock chamber, a transfer chamber, and at least two processing chamber having two or more processing stations. The processing system further includes a storage chamber for storing replaceable parts. The transfer chamber includes a workpiece handling robot. The workpiece handling robot can be configured to transfer a plurality of replaceable parts from the processing stations to the storage chamber.

A method for making a component for use in a semiconductor processing chamber is provided. A component body is formed from a conductive material having a coefficient of thermal expansion of less than 10.0×10.sup.−6/K. A metal oxide layer is then disposed over a surface of the component body.

A 3D imaging system and method for a nanostructure is provided. The 3D imaging system includes a master control center, a vacuum chamber, an electron gun, an imaging signal detector, a broad ion beam source device, and a laser rangefinder component. A sample loading device is arranged inside the vacuum chamber. A radial source of the broad ion beam source device is arranged in parallel with an etched surface of a sample. The laser rangefinder component includes a first laser rangefinder configured to measure a distance from a top surface of an ion beam shielding plate and a second laser rangefinder configured to measure a distance from a non-etched area of the sample, the first laser rangefinder and the second laser rangefinder are arranged side by side, and a laser traveling direction is perpendicular to a traveling direction of the broad ion beam source device.

There is provided a plasma processing apparatus comprising: a plasma processing chamber; a substrate support disposed in the plasma processing chamber, the substrate support including: a base, a ceramic member disposed on the base and having a substrate support surface and a ring support surface, one more annular members disposed on the ring support surface to surround a substrate on the substrate support surface, first and second central electrodes inserted into the ceramic member, first to fourth vertical connectors inserted into the ceramic member, first and second annular connectors inserted into the ceramic member, and a central heater electrode inserted into the ceramic member; a DC power source electrically connected to an outer region of the first annular connector through the third vertical connector; and a voltage pulse generator electrically connected to an outer region of the second annular connector through the fourth vertical connector.

A multi-electron beam inspection apparatus includes first sample hold circuits, each configured to include a capacitor and a switch arranged for each of electrodes of each of a plurality of multipoles, and to hold, using the capacitor and the switch, a potential to be applied to the each of the electrodes, power sources configured to apply potentials to the plurality of first sample hold circuits, a control circuit configured to control the plurality of first sample hold circuits such that the plurality of potentials having been applied to the plurality of first sample hold circuits are held, in synchronization with swinging back of the collective beam deflection by the objective deflector, by a plurality of second sample hold circuits selected from the plurality of first sample hold circuits, and a detector configured to detect multiple secondary electron beams emitted because the substrate is irradiated with the multiple primary electron beams.

In some embodiments, the present disclosure relates to a process tool that includes a chamber housing defined by a processing chamber, and a wafer chuck structure arranged within the processing chamber. The wafer chuck structure is configured to hold a wafer during a fabrication process. The wafer chuck includes a lower portion and an upper portion arranged over the lower portion. The lower portion includes trenches extending from a topmost surface towards a bottommost surface of the lower portion. The upper portion includes openings that are holes, extend completely through the upper portion, and directly overlie the trenches of the lower portion. Multiple of the openings directly overlie each trench. Further, cooling gas piping is coupled to the trenches of the lower portion of the wafer chuck structure, and a cooling gas source is coupled to the cooling gas piping.

An electrostatic adsorption member includes a dielectric member having a first surface and a second surface opposite to the first surface and formed with a through-hole penetrating from the first surface to the second surface, and a porous body provided in the through-hole and having a third surface flush with the first surface. The through-hole has a first opening apart from the first surface by a first distance in a first direction perpendicular to the first surface, and a second opening apart from the first surface by a second distance larger than the first distance in the first direction. In a plan view from the first direction, at least a portion of the first opening is inside the second opening, and the porous body has a first portion located inside the first opening, and a second portion connected to the first portion and located outside the first opening.

A component for use inside a semiconductor chamber with a laser textured surface facing a vacuum region inside the semiconductor chamber is provided.