A semiconductor manufacturing apparatus includes an electrostatic chuck that attracts a workpiece including a substrate. The electrostatic chuck includes an attraction surface that includes a first region and a second region surrounding the first region; and an internal electrode superimposed on each of the first region and the second region in a first direction crossing the attraction surface. The first region has a first depth in the first direction with respect to the attraction surface and includes a first recessed portion superimposed on the internal electrode in the first direction. The second region has a second depth smaller than the first depth in the first direction with respect to the attraction surface and includes a second recessed portion superimposed on the internal electrode in the first direction.

A plasma etching apparatus includes a housing having a processing space; a support inside the housing, the support configured to support a substrate and including at least one lower electrode; at least one upper electrode facing the at least one lower electrode; a sidewall electrode disposed on a sidewall of the housing; a lower radiofrequency (RF) power source connected to the at least one lower electrode and configured to apply RF power; an upper RF power source connected to the at least one upper electrode and configured to apply RF power; a lower insulator adjacent to the at least one lower electrode; an upper insulator adjacent to the at least one upper electrode; at least one lower detector embedded in the lower insulator; and at least one upper detector embedded in the upper insulator.

A wafer support device includes a support base having a wafer-facing surface, the support base comprising a heater, and an electrostatic chuck supported by the support base, the electrostatic chuck having an attraction surface configured to attract a wafer for wafer processing. During the wafer processing, the wafer-facing surface and the attraction surface are positioned at respective different positions in a direction perpendicular to the wafer-facing surface so that the attraction surface is separated from the wafer-facing surface by a distance.

This charged particle gun has a bolt to which a charged particle source is attached, a nut that is screwed together with the bolt and thereby holds the charged particle source, and a nut seat surface in contact with the nut. The nut includes an inclination adjustment section whereby it is possible to adjust the angle of inclination of the charged particle source with respect to the nut seat surface, and a lock section that inhibits the nut and the bolt from becoming loose when screwed together. The inner surface of the nut has a screw thread section and a non-screw thread section with a larger inner diameter than the screw thread section. The inclination adjustment section has: a first slit formed so as to pass through an area from one part of the outer surface of the nut to one part of the non-screw thread section; an inclination adjustment screw; a first part positioned between the first slit and a second surface; a second part positioned between the first slit and a first surface; and a first screw hole that is screwed together with the inclination adjustment screw and formed so as to pass through an area from the first surface to the first slit in the second part.

Provided is a technique capable of shortening observation throughput of a sample. A transfer device 2 includes a holder 24 configured to hold a mesh MS on which a sample to be analyzed using a charged particle beam device 3 is mounted, a position information acquisition function configured to acquire first information about a positional relationship between the mesh MS and the holder 24, and a position information output function configured to output the first information to the charged particle beam device 3.

A member for semiconductor manufacturing apparatus includes: an upper plate that has a wafer placement surface, contains no electrode, and is a ceramic material plate; an intermediate plate that is provided on a surface of the upper plate, opposite to the wafer placement surface, that is used as an electrostatic electrode, and that is a conductive material plate; and a lower plate that is joined to a surface of the intermediate plate, opposite to the surface on which the upper plate is provided, and that is a ceramic material plate.

Provided is a substrate treating method of removing a thin film formed on a substrate. The substrate treating method includes a reaction process of transferring an etchant to the thin film, and a removal process of removing process by-products generated by reacting the thin film with the etchant, in which the reaction process and the removal process are repeated at least twice or more, and any one of the removal processes is to remove partially the process by-products.

A substrate support assembly includes: a base including a flow path for a temperature control medium; a substrate support including an electrode plate installed on the base and an electrostatic chuck installed on the electrode plate, and configured to support a substrate; a heater configured to heat the substrate; an elastic member installed between the base and the electrode plate, configured to separate the substrate support from the base, and configured to define a heat transfer space between the base and the electrode plate, a heat transfer gas being supplied into the heat transfer space; a tightening member configured to fasten the base and the electrode plate to each other, with the elastic member sandwiched and supported between the base and the electrode plate; and a heat insulator configured to prevent heat transfer between the base and the electrode plate via the elastic member.

A high voltage power supply apparatus includes a high voltage direct current voltage source, a power switch configured to apply an output of the high voltage direct current voltage source to process equipment, and a sensing circuit unit including a sensor unit including a sensor and at least one operational amplifier, a reference voltage detection unit connected to a node between the sensor and the at least one operational amplifier, and a digital signal processing unit, wherein the sensing circuit unit is connected to an output terminal through which an output of the high voltage direct current voltage source is applied to the process equipment.

Embodiments herein provide plasma processing chambers and methods configured for fine-tuning and control over a plasma sheath formed during the plasma-assisted processing of a semiconductor substrate. Embodiments include a sheath tuning scheme, including plasma processing chambers and methods, which can be used to tailor one or more characteristics of a plasma sheath formed between a bulk plasma and a substrate surface. Generally, the sheath tuning scheme provides differently configured pulsed voltage (PV) waveforms to a plurality of bias electrodes embedded beneath the surface of a substrate support in an arrangement where each of the electrodes can be used to differentially bias a surface region of a substrate positioned on the support. The sheath tuning scheme disclosed herein can thus be used to adjust and/or control the directionality, and energy and angular distributions of ions that bombard a substrate surface during a plasma-assisted etch process.