A rapid and automatic virus imaging and analysis system includes (i) electron optical sub-systems (EOSs), each of which has a large field of view (FOV) and is capable of instant magnification switching for rapidly scanning a virus sample; (ii) sample management sub-systems (SMSs), each of which automatically loads virus samples into one of the EOSs for virus sample scanning and then unloads the virus samples from the EOS after the virus sample scanning is completed; (iii) virus detection and classification sub-systems (VDCSs), each of which automatically detects and classifies a virus based on images from the EOS virus sample scanning; and (iv) a cloud-based collaboration sub-system for analyzing the virus sample scanning images, storing images from the EOS virus sample scanning, and storing and analyzing machine data associated with the EOSs, the SMSs, and the VDCSs.

A system and method for controlling electrostatic clamping of multiple platens on a spinning disk is disclosed. The system comprises a semiconductor processing system, such as a high energy implantation system. The semiconductor processing system produces a spot ion beam, which is directed to a plurality of workpieces, which are disposed on a spinning disk. The spinning disk comprises a rotating central hub with a plurality of platens. The plurality of platens may extend outward from the central hub and workpieces are electrostatically clamped to the platens. The central hub provides the electrostatic clamping voltages to each of the plurality of platens. Further, the plurality of platens may also be capable of rotation about an axis orthogonal to the rotation axis of the central hub. The central hub controls the rotation of each of the platens. Power connections and communications are provided to the central hub via the spindle assembly.

A sample collective device includes two substrates and a spacer. Each substrate has a first surface and a second surface, and the two substrates are arranged with the first surfaces facing each other. The spacer is disposed between the two first surfaces for bonding and fixing the two substrates and forming a sample containing space. In addition, each of the substrates includes a first weakening structure located in the periphery of the sample containing space and exposed on the first surface. A sample collective device array including a plurality of the aforementioned sample collective devices is also provided.

An ion implantation system having a grid assembly. The system includes a plasma source configured to provide plasma in a plasma region; a first grid plate having a plurality of apertures configured to allow ions from the plasma region to pass therethrough, wherein the first grid plate is configured to be biased by a power supply; a second grid plate having a plurality of apertures configured to allow the ions to pass therethrough subsequent to the ions passing through the first grid plate, wherein the second grid plate is configured to be biased by a power supply; and a substrate holder configured to support a substrate in a position where the substrate is implanted with the ions subsequent to the ions passing through the second grid plate.

A system and method for preparing a sample for study in a charged-particle microscope is disclosed. A sample holder comprises substantially parallel opposing faces connected by apertures spanned by a perforated membrane. Blotting material is placed against the outer membrane surface, and liquid films may then be deposited onto the inner membrane surface within each aperture where each aperture can contain a unique sample. Liquids from each sample flow through the perforations in the membrane to be absorbed by the blotting material. After completion of deposition of liquid samples, the sample holder is raised off the blotting material, leaving aqueous samples within the perforations of the membrane. The sample holder may then be immersed in a vitrifying bath of liquid oxygen to form a cryo-sample for microscopic imaging and analysis.

An apparatus is provided for microscopy, inspection, or analysis of a sample. The apparatus has a vacuum chamber and a charged-particle beam column in the vacuum chamber to direct a charged-particle beam onto a sample. The charged-particle beam column includes a charged-particle beam source to generate a charged-particle beam and charged-particle beam optics to direct the charged-particle beam onto the sample. The apparatus has a detector to detect radiation emanating from the sample to generate an image. A cartridge is provided to support the sample in the path of the charged-particle beam in the vacuum chamber. The cartridge is mechanically decoupled from the environment external to the vacuum chamber. A controller is provided to analyze the detected radiation to generate an image of the sample.

A deposition system is disclosed that allows for growth of inclined c-axis piezoelectric material structures. The system integrates various sputtering modules to yield high quality films and is designed to optimize throughput lending it to a high-volume in manufacturing environment. The system includes two or more process modules including an off-axis module constructed to deposit material at an inclined c-axis and a longitudinal module constructed to deposit material at normal incidence; a central wafer transfer unit including a load lock, a vacuum chamber, and a robot disposed within the vacuum chamber and constructed to transfer a wafer substrate between the central wafer transfer unit and the two or more process modules; and a control unit operatively connected to the robot.

A substrate processing apparatus includes a vacuum container, a placing part provided inside the vacuum container and having a placing surface on which a substrate is placed, and a ceiling member provided above the placing part. The ceiling member includes a fixed member fixed to the vacuum container, a movable member attached to the fixed member and having a first facing surface facing the placing surface, a spacer sandwiched between the fixed member and the movable member, a first seal member provided between the fixed member and the spacer, a second seal member provided between the movable member and the spacer, and a plurality of adjustment bolts screwed into the fixed member through the movable member.

Provided is a batch type substrate processing apparatus that supplies a process gas decomposed in a discharge space, which is distinguished from a processing space, into the processing space. The batch type substrate processing apparatus includes a reaction tube configured to provide a processing space, a plasma forming part having a discharge space, which is distinguished from the processing space by a partition wall and generating plasma in the discharge space by a plurality of electrodes extending along a longitudinal direction of the reaction tube. The plurality of electrodes includes a plurality of power supply electrodes spaced apart from each other and a plurality of ground electrodes provided between the plurality of power supply electrodes.

A holding device for holding a plurality of substrates for plasma-enhanced deposition of a layer from the gas phase on the substrates, having: inner carrier plates, arranged parallel to one another and designed to carry substrates on mutually opposite sides; outer carrier plates, arranged parallel to the inner carrier plates and having an inner side facing the inner carrier plates, and an outer side facing away from the inner carrier plates, wherein each outer carrier plate is designed to carry one or more substrates on its inner side and to be free of substrates on its outer side; and shielding plates which are each arranged at a distance from the outer side of the outer carrier plate such that, as seen in a plan view of the outer carrier plates, the shielding plates at least predominantly shield the outer carrier plates, wherein each shielding plate is free of substrates.