A Fast Faraday cup includes a group of electrodes including a ground electrode having a through hole and a collector electrode configured with a blind hole that functions a collector hole. The electrodes are configured to allow a beam (e.g., a non-relativistic beam) to fall onto the ground electrode so that the through hole cuts a beamlet that flies into the collector hole and facilitates measurement of the longitudinal distribution of particle charge density in the beam. The diameters, depths, spacing and alignment of the collector hole and the through hole are controllable to enable the Fast Faraday day cup to operate with a fast response time (e.g., fine time resolution) and capture secondary particles.

An ion implanter includes an implantation processing chamber in which an implantation process of irradiating a wafer with an ion beam is performed, a first Faraday cup disposed inside the implantation processing chamber to measure a beam current of the ion beam during a preparation process performed before the implantation process, a second Faraday cup disposed inside the implantation processing chamber to measure a beam current of the ion beam during a calibration process for calibrating a beam current measurement value of the first Faraday cup, and a blockade member for blocking the ion beam directed toward the second Faraday cup, the blockade member being configured so that the ion beam is not incident into the second Faraday cup during the implantation process and the preparation process, and the ion beam is incident into the second Faraday cup during the calibration process.

Computed tomographic method and apparatus includes an electron or ion beam having a beam axis, a refractory metal disk; at least one slit in the refractory metal disk that receive the beam, wherein the slit is at an angle to the beam axis; a beam entrance opening in the slit that allows the beam to enter; an effective beam exit opening in the slit that allow the beam to exit, wherein the beam effective exit opening is smaller than the beam entrance opening; and a system for moving the beam across the refractory metal disk, wherein the beam enters the slit through the beam entrance opening and exits the slit through the effective beam exit opening; and a computed tomographic device for measuring the beam that enters and exits the slit for analyzing the beam.

A measurement device includes a plurality of slits, a beam current measurement unit provided at a position away from the slits in a beam traveling direction, and a measurement control unit. The beam current measurement unit is configured to be capable of measuring a beam current at a plurality of measurement positions to be different positions in a first direction perpendicular to the beam traveling direction. The slits are disposed to be spaced apart in the first direction such that the first direction coincides with a slit width direction and are configured to be movable in the first direction. The measurement control unit acquires a plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction with the beam current measurement unit while moving the slits in the first direction.

The disclosure discloses an ion injecting device, and an ion injecting method thereof, where the ion injecting device is modified by adding a vacant baffle between a process chamber and an analyzing magnet. Moreover the vacant baffle is closed before an engineer opens the process chamber for cleaning, so that the process chamber is separated from the analyzing magnet, thus maintaining a vacuum environment in the analyzing magnet. Subsequently only a vacuum environment in the process chamber will be created again.

Computed tomographic method and apparatus includes an electron or ion beam having a beam axis, a refractory metal disk; at least one slit in the refractory metal disk that receive the beam, wherein the slit is at an angle to the beam axis; a beam entrance opening in the slit that allows the beam to enter; an effective beam exit opening in the slit that allow the beam to exit, wherein the beam effective exit opening is smaller than the beam entrance opening; and a system for moving the beam across the refractory metal disk, wherein the beam enters the slit through the beam entrance opening and exits the slit through the effective beam exit opening; and a computed tomographic device for measuring the beam that enters and exits the slit for analyzing the beam.

An apparatus is provided. The apparatus includes a beam current measuring device and a first electrode. The beam current measuring device is retractably movable into an ion beam trajectory so as to measure an ion beam current. The first electrode is disposed immediately upstream of the beam current measuring device in an ion beam transport channel. The first electrode serves both as a suppressor electrode for repelling secondary electrons released from the beam current measuring device, back toward the beam current measuring device, and as a beam optical element other than the suppressor electrode.

An ion implanter includes a measuring device that measures an angle distribution of an ion beam with which a wafer is irradiated. The measuring device includes: a slit into which the ion beam is incident; a central electrode body having a beam measurement surface disposed on a central plane extending from the slit to a beam traveling direction; a plurality of side electrode bodies disposed between the slit and the central electrode body and disposed away from the central plane in a slit width direction, in which each of the plurality of side electrode bodies has a beam measurement surface; and a magnet device that applies a magnetic field bending around an axis extending along a slit length direction to at least one of the beam measurement surfaces of the plurality of side electrode bodies.

An device for measuring electron beam comprises a Faraday cup comprising an opening; a porous carbon material layer located on a surface of the Faraday cup and suspended at the opening; and an electricity meter electrically connected to the porous carbon material layer. A length of a suspended portion of the porous carbon material layer is greater than or equal to a maximum diameter of an electron beam to be measured. A diameter or a width of the porous carbon material layer is smaller than a minimum diameter of a cross section of the electron beam to be measured. The porous carbon material layer comprises a plurality of carbon material particles, and a plurality of micro gaps exist between the plurality of carbon material particles. A method for measuring an electron beam using the device for measuring electron beam is also provided.

Apparatus and method for analyzing an electron beam including a circular sensor disk adapted to receive the electron beam, an inner semi-circular slit in the circular sensor disk; an outer semi-circular slit in the circular sensor disk wherein the outer semi-circular slit is spaced from the first semi-circular slit by a fixed distance; a system for sweeping the electron beam radially outward from the central axis to the inner semi-circular slit and outer second semi-circular slit; a sensor structure operatively connected to the circular sensor disk wherein the sensor structure receives the electron beam when it passes over the inner semi-circular slit and the outer semi-circular slit; and a device for measuring the electron beam that is intercepted by the inner semi-circular slit and the outer semi-circular slit.