Patent classifications
H01J2237/24405
Ion implantation apparatus and measurement device
An angle measurement device includes: a slit through which an ion beam is incident, and a width direction of which is orthogonal to a beam traveling direction of the ion beam toward a wafer; and a plurality of electrode bodies which are provided at positions away from the slit in the beam traveling direction, and each of which includes a beam measurement surface that is a region which is exposed to the ion beam having passed through the slit. The plurality of electrode bodies are disposed such that the beam measurement surfaces of the electrode bodies are arranged in order in the width direction of the slit and the beam measurement surfaces adjacent to each other in the width direction of the slit deviate from each other in the beam traveling direction.
ION INJECTING DEVICE, AND ION INJECTING METHOD THEREOF
The disclosure discloses an ion injecting device, and an ion injecting method thereof, where the ion injecting device is modified by adding a vacant baffle between a process chamber and an analyzing magnet. Moreover the vacant baffle is closed before an engineer opens the process chamber for cleaning, so that the process chamber is separated from the analyzing magnet, thus maintaining a vacuum environment in the analyzing magnet. Subsequently only a vacuum environment in the process chamber will be created again.
Assessment and calibration of a high energy beam
A high energy beam verification, calibration, and profiling system includes a conductive base plate, supports extending from the base plate, a plurality of conductors, a data logger electrically connected to the conductors, and a computer electrically connected to the data logger. Each conductor is supported by some of the supports such that each conductor is insulated from the conductive base plate. Each conductor has a profile intersecting with profiles of at least some of the other conductors to define a multidirectional and two-dimensional array of conductors. The data logger receives and records data associated with electrical charges flowing through the conductors. The computer is adapted to receive, manipulate, and display the data recorded by the data logger for comparison of beam characteristics at different locations across a high energy beam build area.
Ion collector for use in plasma systems
An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.
ION IMPLANTATION APPARATUS AND MEASUREMENT DEVICE
A measurement device includes a plurality of slits, a beam current measurement unit provided at a position away from the slits in a beam traveling direction, and a measurement control unit. The beam current measurement unit is configured to be capable of measuring a beam current at a plurality of measurement positions to be different positions in a first direction perpendicular to the beam traveling direction. The slits are disposed to be spaced apart in the first direction such that the first direction coincides with a slit width direction and are configured to be movable in the first direction. The measurement control unit acquires a plurality of beam current values measured at the plurality of measurement positions to be the different positions in the first direction with the beam current measurement unit while moving the slits in the first direction.
ION BEAM CURRENT MEASUREMENT DEVICE AND ION BEAM IMPLANTATION SYSTEM
An ion beam current measurement device includes a first Faraday cup having a first ion beam entrance slit of a first width W.sub.1. The first Faraday cup is configured to generate a first current signal. The device further includes a second Faraday cup having a second ion beam entrance slit of a second width W.sub.2. The second Faraday cup is configured to generate a second current signal. The slit widths are designed such that W.sub.2 is greater than W.sub.1.
APPARATUS AND TECHNIQUES FOR BEAM MAPPING IN ION BEAM SYSTEM
An apparatus for monitoring of an ion beam. The apparatus may include a processor; and a memory unit coupled to the processor, including a display routine, where the display routine operative on the processor to manage monitoring of the ion beam. The display routine may include a measurement processor to receive a plurality of spot beam profiles of the ion beam, the spot beam profiles collected during a fast scan of the ion beam and a slow mechanical scan of a detector, conducted simultaneously with the fast scan. The fast scan may comprise a plurality of scan cycles having a frequency of 10 Hz or greater along a fast scan direction, and the slow mechanical scan being performed in a direction parallel to the fast scan direction. The measurement processor may also send a display signal to display at least one set of information, derived from the plurality of spot beam profiles.
Measurement of the electric current profile of particle clusters in gases and in a vacuum
The invention relates to the measurement of current profiles of free-flying ion or electron clusters which impinge on a detector electrode of a Faraday detector. The detector electrode here consists of a large number of structural elements in a bipolar arrangement, where neighboring structural elements have opposite polarities and structural elements with the same polarity are electrically connected, and a voltage is applied between neighboring structural elements so that before ions or electrons impinge on the detection electrode, they are essentially deflected onto the structural elements with one of the two polarities. If the current profiles on the structural elements of the two polarities are measured separately and subtracted from each other, a current profile which corresponds to the pure ion or electron current profile is obtained without using a screen grid.
ION COLLECTOR FOR USE IN PLASMA SYSTEMS
An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.
ASSESSMENT AND CALIBRATION OF A HIGH ENERGY BEAM
A high energy beam verification, calibration, and profiling system includes a conductive base plate, supports extending from the base plate, a plurality of conductors, a data logger electrically connected to the conductors, and a computer electrically connected to the data logger. Each conductor is supported by some of the supports such that each conductor is insulated from the conductive base plate. Each conductor has a profile intersecting with profiles of at least some of the other conductors to define a multidirectional and two-dimensional array of conductors. The data logger receives and records data associated with electrical charges flowing through the conductors. The computer is adapted to receive, manipulate, and display the data recorded by the data logger for comparison of beam characteristics at different locations across a high energy beam build area.